MTD6N20ET4G
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onsemi MTD6N20ET4G

Manufacturer No:
MTD6N20ET4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 200V 6A DPAK
Delivery:
Payment:
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iso45001
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iso13485

Product Introduction

Overview

The MTD6N20ET4G is a high-performance N-Channel Power MOSFET produced by onsemi. This device is designed for high-power applications requiring efficient switching and robust reliability. The MTD6N20ET4G features a DPAK package, making it suitable for surface mount applications. Although this product is currently obsolete and no longer manufactured, it remains relevant for existing designs and maintenance of older systems.

Key Specifications

ParameterValueUnit
Voltage Rating (Vds)200V
Current Rating (Id)6A
On-Resistance (Rds(on))700
Package TypeDPAK
Power Dissipation (Pd)1.75W (Ta), 50W (Tc)W
Operating Temperature Range-40 to +150°C

Key Features

  • High voltage rating of 200V, making it suitable for high-power applications.
  • High current rating of 6A, ensuring robust performance in demanding environments.
  • Low on-resistance of 700mΩ, which minimizes power losses and enhances efficiency.
  • DPAK package for surface mount applications, offering good thermal dissipation and compact design.
  • Wide operating temperature range from -40°C to +150°C, ensuring reliability in various environmental conditions.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-power switching applications.
  • Automotive and industrial control systems.
  • LED lighting and display systems.

Q & A

  1. What is the voltage rating of the MTD6N20ET4G MOSFET?
    The voltage rating of the MTD6N20ET4G MOSFET is 200V.
  2. What is the current rating of the MTD6N20ET4G MOSFET?
    The current rating of the MTD6N20ET4G MOSFET is 6A.
  3. What is the on-resistance of the MTD6N20ET4G MOSFET?
    The on-resistance of the MTD6N20ET4G MOSFET is 700mΩ.
  4. What package type does the MTD6N20ET4G MOSFET use?
    The MTD6N20ET4G MOSFET uses a DPAK package.
  5. Is the MTD6N20ET4G MOSFET still in production?
    No, the MTD6N20ET4G MOSFET is currently obsolete and no longer manufactured.
  6. What is the operating temperature range of the MTD6N20ET4G MOSFET?
    The operating temperature range of the MTD6N20ET4G MOSFET is from -40°C to +150°C.
  7. What are some common applications for the MTD6N20ET4G MOSFET?
    Common applications include power supplies, DC-DC converters, motor control, high-power switching, automotive systems, and industrial control systems.
  8. Why is the DPAK package used for the MTD6N20ET4G MOSFET?
    The DPAK package is used for its good thermal dissipation and compact design, making it suitable for surface mount applications.
  9. What are the power dissipation ratings for the MTD6N20ET4G MOSFET?
    The power dissipation ratings are 1.75W (Ta) and 50W (Tc).
  10. How does the low on-resistance of the MTD6N20ET4G MOSFET benefit its performance?
    The low on-resistance minimizes power losses and enhances the overall efficiency of the device.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:700mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:480 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.75W (Ta), 50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Same Series
MTD6N20ET5G
MTD6N20ET5G
MOSFET N-CH 200V 6A DPAK

Similar Products

Part Number MTD6N20ET4G MTD6N20ET5G MTD6N20ET4
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) 6A (Tc) 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V -
Rds On (Max) @ Id, Vgs 700mOhm @ 3A, 10V 700mOhm @ 3A, 10V 700mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V 21 nC @ 10 V 21 nC @ 10 V
Vgs (Max) ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 480 pF @ 25 V 480 pF @ 25 V 480 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 1.75W (Ta), 50W (Tc) 1.75W (Ta), 50W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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