MTD6N20ET4
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onsemi MTD6N20ET4

Manufacturer No:
MTD6N20ET4
Manufacturer:
onsemi
Package:
Cut Tape (CT)
Description:
MOSFET N-CH 200V 6A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MTD6N20ET4 is an advanced Power MOSFET from onsemi, designed to withstand high energy in avalanche and commutation modes. This N-Channel MOSFET is part of the PowerTrench® T1 family and is housed in a DPAK-3 package. It is particularly suited for low voltage, high speed switching applications in power supplies, converters, and PWM motor controls. The device features a drain-to-source diode with a fast recovery time, making it ideal for bridge circuits where diode speed and commutating safe operating areas are critical.

Key Specifications

CharacteristicSymbolValueUnit
Drain-to-Source VoltageVDSS200Vdc
Drain CurrentID6A
Drain-to-Source On-Resistance (VGS = 10 Vdc, ID = 3.0 A)RDS(on)0.46 - 0.700Ohm
Gate Threshold VoltageVGS(th)2.0 - 4.0Vdc
Maximum Temperature for Soldering PurposesTL260°C
Input Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz)Ciss342 - 480pF
Output CapacitanceCoss92 - 130pF
Reverse Transfer CapacitanceCrss27 - 55pF

Key Features

  • Avalanche Energy Specified
  • Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
  • Diode is Characterized for Use in Bridge Circuits
  • IDSS and VDS(on) Specified at Elevated Temperature
  • Pb-Free and RoHS Compliant Packages

Applications

The MTD6N20ET4 is designed for use in various high-speed switching applications, including:

  • Power supplies
  • Converters
  • PWM motor controls
  • Bridge circuits where diode speed and commutating safe operating areas are critical

Q & A

  1. What is the maximum drain-to-source voltage of the MTD6N20ET4?
    The maximum drain-to-source voltage (VDSS) is 200 Vdc.
  2. What is the maximum drain current of the MTD6N20ET4?
    The maximum drain current (ID) is 6 A.
  3. What is the typical drain-to-source on-resistance of the MTD6N20ET4?
    The typical drain-to-source on-resistance (RDS(on)) is 0.46 - 0.700 Ohm at VGS = 10 Vdc and ID = 3.0 A.
  4. What is the gate threshold voltage range of the MTD6N20ET4?
    The gate threshold voltage (VGS(th)) range is 2.0 - 4.0 Vdc.
  5. Is the MTD6N20ET4 Pb-Free and RoHS compliant?
    Yes, the MTD6N20ET4 is Pb-Free and RoHS compliant.
  6. What is the maximum temperature for soldering purposes?
    The maximum temperature for soldering purposes is 260°C.
  7. What are the typical input, output, and reverse transfer capacitances?
    The typical input capacitance (Ciss) is 342 - 480 pF, output capacitance (Coss) is 92 - 130 pF, and reverse transfer capacitance (Crss) is 27 - 55 pF.
  8. What are the primary applications of the MTD6N20ET4?
    The primary applications include power supplies, converters, PWM motor controls, and bridge circuits.
  9. What package type is the MTD6N20ET4 available in?
    The MTD6N20ET4 is available in a DPAK-3 package.
  10. Is the MTD6N20ET4 suitable for high-speed switching applications?
    Yes, it is designed for low voltage, high speed switching applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:700mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:480 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number MTD6N20ET4 MTD6N20ET4G
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V
Rds On (Max) @ Id, Vgs 700mOhm @ 3A, 10V 700mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V 21 nC @ 10 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds 480 pF @ 25 V 480 pF @ 25 V
FET Feature - -
Power Dissipation (Max) - 1.75W (Ta), 50W (Tc)
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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