Overview
The MTD6N20E1 is a 6 A, 200 V, N-Channel Power MOSFET produced by onsemi. This advanced MOSFET is designed to withstand high energy in both avalanche and commutation modes, making it highly suitable for various power management applications. It features an energy-efficient design with a drain-to-source diode that has a fast recovery time, which is comparable to a discrete fast recovery diode. The device is particularly well-suited for bridge circuits where diode speed and commutating safe operating areas are critical.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 200 | Vdc |
| Drain-to-Gate Voltage (RGS = 1.0 MΩ) | VDGR | 200 | Vdc |
| Gate-to-Source Voltage - Continuous | VGS | ±20 | Vdc |
| Gate-to-Source Voltage - Non-repetitive (tp ≤ 10 ms) | VGSM | ±40 | Vpk |
| Drain Current - Continuous | ID | 6.0 | Adc |
| Drain Current - Continuous @ 100°C | ID | 3.8 | Adc |
| Drain Current - Single Pulse (tp ≤ 10 μs) | IDM | 18 | Apk |
| Total Power Dissipation @ TA = 25°C | PD | 50 | W |
| Operating and Storage Temperature Range | TJ, Tstg | -55 to 150 | °C |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 54 | mJ |
| Thermal Resistance - Junction-to-Case | RθJC | 2.50 | °C/W |
| Thermal Resistance - Junction-to-Ambient | RθJA | 100 | °C/W |
| Maximum Temperature for Soldering Purposes | TL | 260 | °C |
Key Features
- Avalanche Energy Specified
- Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
- Diode is Characterized for Use in Bridge Circuits
- IDSS and VDS(on) Specified at Elevated Temperature
- Pb-Free and RoHS Compliant
Applications
The MTD6N20E1 is designed for low voltage, high speed switching applications in power supplies, converters, and PWM motor controls. It is particularly well-suited for bridge circuits where diode speed and commutating safe operating areas are critical, offering additional safety margin against unexpected voltage transients.
Q & A
- What is the maximum drain-to-source voltage of the MTD6N20E1? The maximum drain-to-source voltage is 200 Vdc.
- What is the continuous drain current rating at 25°C? The continuous drain current rating at 25°C is 6.0 Adc.
- What is the maximum single pulse drain current? The maximum single pulse drain current is 18 Apk.
- What is the thermal resistance from junction to case? The thermal resistance from junction to case is 2.50 °C/W.
- Is the MTD6N20E1 Pb-Free and RoHS compliant? Yes, the MTD6N20E1 is Pb-Free and RoHS compliant.
- What are the typical applications of the MTD6N20E1? The MTD6N20E1 is typically used in power supplies, converters, and PWM motor controls, especially in bridge circuits.
- What is the maximum operating temperature of the MTD6N20E1? The maximum operating temperature is 150°C.
- What is the maximum avalanche energy rating? The maximum avalanche energy rating is 54 mJ.
- How does the MTD6N20E1 handle high energy in avalanche and commutation modes? The MTD6N20E1 is designed to withstand high energy in both avalanche and commutation modes, ensuring robust performance in demanding applications.
- What is the recovery time of the source-to-drain diode? The source-to-drain diode has a recovery time comparable to a discrete fast recovery diode.
