MMFT3055ET1
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onsemi MMFT3055ET1

Manufacturer No:
MMFT3055ET1
Manufacturer:
onsemi
Package:
Bulk
Description:
SMALL SIGNAL N-CHANNEL MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMFT3055ET1 is a small signal N-Channel TMOS E-FET Power MOSFET manufactured by onsemi. This device is designed for high-performance applications requiring low on-resistance and high switching speeds. The MMFT3055ET1 is packaged in a TO-261AA (SOT-223) package, making it suitable for surface mount applications.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (Vds) 60 V
Drain Current (Id) 1.7 A
Gate Threshold Voltage (Vgs(th)) 2 V @ 1 mA
On-Resistance (Rds(on)) - -
Power Dissipation (Pd) 800 mW
Reverse Transfer Capacitance (Crss) 40 pF @ 20 V
Package Type TO-261AA (SOT-223) -

Key Features

  • Low on-resistance for efficient power handling.
  • High switching speeds, making it suitable for high-frequency applications.
  • Compact TO-261AA (SOT-223) package for surface mount applications.
  • Low gate threshold voltage for easy switching.
  • High drain-source voltage rating of 60V.

Applications

  • Power management and switching circuits.
  • High-frequency amplifiers and oscillators.
  • Motor control and drive systems.
  • Automotive and industrial control systems.
  • General-purpose switching applications.

Q & A

  1. What is the drain-source voltage rating of the MMFT3055ET1?

    The drain-source voltage rating of the MMFT3055ET1 is 60V.

  2. What is the maximum drain current for the MMFT3055ET1?

    The maximum drain current for the MMFT3055ET1 is 1.7A.

  3. What is the gate threshold voltage of the MMFT3055ET1?

    The gate threshold voltage of the MMFT3055ET1 is 2V at 1 mA.

  4. What package type is the MMFT3055ET1 available in?

    The MMFT3055ET1 is available in the TO-261AA (SOT-223) package.

  5. What is the power dissipation rating of the MMFT3055ET1?

    The power dissipation rating of the MMFT3055ET1 is 800 mW.

  6. What are some common applications for the MMFT3055ET1?

    The MMFT3055ET1 is commonly used in power management, high-frequency amplifiers, motor control, automotive systems, and general-purpose switching applications.

  7. Is the MMFT3055ET1 RoHS compliant?

    The MMFT3055ET1 may not be RoHS compliant; it is important to check the specific product documentation or supplier information for compliance details.

  8. What is the reverse transfer capacitance of the MMFT3055ET1?

    The reverse transfer capacitance (Crss) of the MMFT3055ET1 is 40 pF at 20 V.

  9. How does the MMFT3055ET1 handle high switching speeds?

    The MMFT3055ET1 is designed to handle high switching speeds due to its low on-resistance and optimized gate structure.

  10. Can the MMFT3055ET1 be used in surface mount applications?

    Yes, the MMFT3055ET1 is suitable for surface mount applications due to its TO-261AA (SOT-223) package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:12.5 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):800mW (Ta)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223
Package / Case:SOT-223-3
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