MGSF2N02ELT1G
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onsemi MGSF2N02ELT1G

Manufacturer No:
MGSF2N02ELT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 2.8A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MGSF2N02ELT1G is a N-Channel MOSFET produced by onsemi, designed for high-performance and low power loss applications. This miniature surface mount device is packaged in a SOT-23-3 format, making it ideal for space-sensitive designs. The MOSFET is known for its low on-resistance (RDS(on)) and high current handling capabilities, which ensure minimal power loss and efficient energy conservation.

Key Specifications

ParameterValue
Voltage Rating (Vds)20V
Current Rating (Id)2.8A
Power Dissipation (Pd)1.25W
On-Resistance (Rds(on))85mΩ @ Vgs = 4.5V, Id = 3.6A
Threshold Voltage (Vth)1V @ Id = 250μA
Package TypeSOT-23-3

Key Features

  • Low on-resistance (Rds(on)) to minimize power loss and conserve energy.
  • High current handling capability of up to 2.8A.
  • Compact SOT-23-3 package suitable for space-sensitive designs.
  • RoHS compliant, ensuring environmental sustainability.
  • Ideal for applications requiring high efficiency and reliability.

Applications

  • Power management in portable electronics and battery-powered devices.
  • DC-DC converters and switching power supplies.
  • Motor control and drive circuits.
  • Automotive and industrial control systems.
  • General-purpose switching applications where low Rds(on) is critical.

Q & A

  1. What is the voltage rating of the MGSF2N02ELT1G MOSFET? The voltage rating (Vds) is 20V.
  2. What is the current handling capability of the MGSF2N02ELT1G? The current rating (Id) is 2.8A.
  3. What is the on-resistance (Rds(on)) of the MGSF2N02ELT1G? The on-resistance is 85mΩ @ Vgs = 4.5V, Id = 3.6A.
  4. What is the package type of the MGSF2N02ELT1G? The package type is SOT-23-3.
  5. Is the MGSF2N02ELT1G RoHS compliant? Yes, it is RoHS compliant.
  6. What are some typical applications of the MGSF2N02ELT1G? Typical applications include power management in portable electronics, DC-DC converters, motor control, and general-purpose switching.
  7. What is the power dissipation (Pd) of the MGSF2N02ELT1G? The power dissipation is 1.25W.
  8. What is the threshold voltage (Vth) of the MGSF2N02ELT1G? The threshold voltage is 1V @ Id = 250μA.
  9. Why is the MGSF2N02ELT1G suitable for space-sensitive designs? It is suitable due to its compact SOT-23-3 package.
  10. Where can I find detailed specifications for the MGSF2N02ELT1G? Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and LCSC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:85mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:3.5 nC @ 4 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:150 pF @ 5 V
FET Feature:- 
Power Dissipation (Max):1.25W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
MVSF2N02ELT1G
MVSF2N02ELT1G
MOSFET N-CH 20V 2.8A SOT23-3

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