FQU17P06TU
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onsemi FQU17P06TU

Manufacturer No:
FQU17P06TU
Manufacturer:
onsemi
Package:
Bulk
Description:
MOSFET P-CH 60V 12A IPAK
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The FQU17P06TU is a P-Channel enhancement mode power MOSFET produced by onsemi, utilizing Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET is designed to reduce on-state resistance and provide superior switching performance along with high avalanche energy strength. It is suitable for a variety of applications requiring high current and voltage handling capabilities.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDSS)-60V
Continuous Drain Current (ID) at TC = 25°C-12A
Continuous Drain Current (ID) at TC = 100°C-7.6A
Pulsed Drain Current (IDM)-48A
Gate-Source Voltage (VGSS)±25V
Static Drain-Source On-Resistance (RDS(on)) at VGS = -10 V, ID = -6 A0.135Ω
Power Dissipation (PD) at TA = 25°C2.5W
Operating and Storage Temperature Range-55 to +150°C
Thermal Resistance, Junction-to-Case (RθJC)2.85°C/W
Thermal Resistance, Junction to Ambient (RθJA) with minimum pad size110°C/W

Key Features

  • Low on-state resistance (RDS(on)) of 135 mΩ (max.) at VGS = -10 V, ID = -6 A
  • Low gate charge (typ. 21 nC)
  • Low Crss (typ. 80 pF)
  • 100% avalanche tested
  • High switching performance and high avalanche energy strength
  • Wide operating temperature range from -55°C to +150°C

Applications

The FQU17P06TU is suitable for various high-power applications, including:

  • Switched mode power supplies
  • Audio amplifiers
  • DC motor control
  • Variable switching power applications

Q & A

  1. What is the maximum drain-source voltage of the FQU17P06TU?
    The maximum drain-source voltage (VDSS) is -60 V.
  2. What is the continuous drain current at 25°C and 100°C?
    The continuous drain current is -12 A at 25°C and -7.6 A at 100°C.
  3. What is the typical on-state resistance of the FQU17P06TU?
    The typical on-state resistance (RDS(on)) is 0.135 Ω at VGS = -10 V, ID = -6 A.
  4. What is the thermal resistance from junction to case?
    The thermal resistance from junction to case (RθJC) is 2.85 °C/W.
  5. What are the typical applications of the FQU17P06TU?
    The FQU17P06TU is used in switched mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.
  6. What is the maximum power dissipation at 25°C?
    The maximum power dissipation (PD) at TA = 25°C is 2.5 W.
  7. What is the operating and storage temperature range of the FQU17P06TU?
    The operating and storage temperature range is from -55°C to +150°C.
  8. What is the gate-source voltage range?
    The gate-source voltage (VGSS) range is ±25 V.
  9. What is the typical gate charge?
    The typical gate charge is 21 nC.
  10. Is the FQU17P06TU 100% avalanche tested?
    Yes, the FQU17P06TU is 100% avalanche tested.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:135mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 44W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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Same Series
FQU17P06TU
FQU17P06TU
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MOSFET P-CH 60V 12A DPAK

Similar Products

Part Number FQU17P06TU FQU7P06TU FQU11P06TU
Manufacturer onsemi Fairchild Semiconductor onsemi
Product Status Last Time Buy Obsolete Last Time Buy
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 5.4A (Tc) 9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 135mOhm @ 6A, 10V 451mOhm @ 2.7A, 10V 185mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V 8.2 nC @ 10 V 17 nC @ 10 V
Vgs (Max) ±25V ±25V ±30V
Input Capacitance (Ciss) (Max) @ Vds 900 pF @ 25 V 295 pF @ 25 V 550 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 2.5W (Ta), 44W (Tc) 2.5W (Ta), 28W (Tc) 2.5W (Ta), 38W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package I-PAK I-PAK I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

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