FQD6N40CTM
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onsemi FQD6N40CTM

Manufacturer No:
FQD6N40CTM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 400V 4.5A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQD6N40CTM is a QFET® N-channel enhancement-mode Power MOSFET produced by onsemi. This device utilizes onsemi's proprietary planar stripe and DMOS technology, offering advanced performance characteristics. It is designed to operate in a wide range of applications requiring high power handling and efficiency.

Key Specifications

ParameterValue
Channel ModeEnhancement
Voltage Rating (Vds)400 V
Current Rating (Id)4.5 A
On-Resistance (Rds(on))1.0 mΩ
Power Dissipation (Pd)2.5 W
Minimum Operating Temperature-55°C
Maximum Operating Temperature+150°C
Package TypeTO-252 (DPAK)

Key Features

  • Produced using onsemi's proprietary planar stripe and DMOS technology for enhanced performance.
  • High voltage rating of 400 V and current rating of 4.5 A.
  • Low on-resistance of 1.0 mΩ, reducing power losses.
  • Wide operating temperature range from -55°C to +150°C.
  • TO-252 (DPAK) package for efficient heat dissipation and compact design.

Applications

The FQD6N40CTM is suitable for a variety of high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Automotive systems requiring high reliability and efficiency.
  • Renewable energy systems such as solar and wind power.

Q & A

  1. What is the voltage rating of the FQD6N40CTM MOSFET?
    The voltage rating of the FQD6N40CTM MOSFET is 400 V.
  2. What is the current rating of the FQD6N40CTM MOSFET?
    The current rating of the FQD6N40CTM MOSFET is 4.5 A.
  3. What is the on-resistance of the FQD6N40CTM MOSFET?
    The on-resistance of the FQD6N40CTM MOSFET is 1.0 mΩ.
  4. What is the operating temperature range of the FQD6N40CTM MOSFET?
    The operating temperature range of the FQD6N40CTM MOSFET is from -55°C to +150°C.
  5. What package type is the FQD6N40CTM MOSFET available in?
    The FQD6N40CTM MOSFET is available in the TO-252 (DPAK) package.
  6. What technology is used to produce the FQD6N40CTM MOSFET?
    The FQD6N40CTM MOSFET is produced using onsemi's proprietary planar stripe and DMOS technology.
  7. What are some typical applications for the FQD6N40CTM MOSFET?
    The FQD6N40CTM MOSFET is suitable for power supplies, motor control systems, industrial automation, automotive systems, and renewable energy systems.
  8. What is the power dissipation rating of the FQD6N40CTM MOSFET?
    The power dissipation rating of the FQD6N40CTM MOSFET is 2.5 W.
  9. Is the FQD6N40CTM MOSFET suitable for high-power applications?
    Yes, the FQD6N40CTM MOSFET is designed for high-power applications due to its high voltage and current ratings.
  10. Where can I find detailed specifications for the FQD6N40CTM MOSFET?
    Detailed specifications for the FQD6N40CTM MOSFET can be found on the official onsemi website, as well as on distributor websites such as Mouser, Farnell, and TME.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):400 V
Current - Continuous Drain (Id) @ 25°C:4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1Ohm @ 2.25A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:625 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 48W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Same Series
FQD6N40CTF
FQD6N40CTF
MOSFET N-CH 400V 4.5A DPAK

Similar Products

Part Number FQD6N40CTM FQD6N60CTM FQD6N50CTM FQD6N40TM FQD6N40CTF
Manufacturer onsemi Fairchild Semiconductor onsemi Fairchild Semiconductor onsemi
Product Status Active Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V 600 V 500 V 400 V 400 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc) 4A (Tc) 4.5A (Tc) 4.2A (Tc) 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1Ohm @ 2.25A, 10V 2Ohm @ 2A, 10V 1.2Ohm @ 2.25A, 10V 1.15Ohm @ 2.1A, 10V 1Ohm @ 2.25A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V 20 nC @ 10 V 25 nC @ 10 V 17 nC @ 10 V 20 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 625 pF @ 25 V 810 pF @ 25 V 700 pF @ 25 V 620 pF @ 25 V 625 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 2.5W (Ta), 48W (Tc) 80W (Tc) 2.5W (Ta), 61W (Tc) 2.5W (Ta), 50W (Tc) 2.5W (Ta), 48W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252, (D-Pak) TO-252AA TO-252, (D-Pak) TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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