FQD18N20V2TM
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onsemi FQD18N20V2TM

Manufacturer No:
FQD18N20V2TM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 200V 15A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQD18N20V2TM is a high-performance N-Channel enhancement mode power MOSFET produced by onsemi. Utilizing onsemi's proprietary planar stripe and DMOS technology, this MOSFET is designed to offer superior performance in various power management applications. It features a robust design and advanced technology, making it suitable for a wide range of industrial and consumer electronics.

Key Specifications

ParameterValue
Transistor Type1 N-Channel MOSFET
Drain-Source Voltage (Vds)200 V
Continuous Drain Current (Id)15 A
On-Resistance (Rds(on))140 mΩ @ 10 V
Typical Turn-On Delay Time16 ns
Typical Turn-Off Delay Time38 ns
Package TypeTO-252AA (DPAK)

Key Features

  • High voltage rating of 200 V, making it suitable for high-power applications.
  • Low on-resistance of 140 mΩ @ 10 V, reducing power losses and improving efficiency.
  • High continuous drain current of 15 A, enabling it to handle demanding power requirements.
  • Fast switching times with typical turn-on and turn-off delay times of 16 ns and 38 ns, respectively.
  • Produced using onsemi's proprietary planar stripe and DMOS technology for enhanced performance and reliability.
  • Compliant with RoHS standards, ensuring environmental sustainability.

Applications

The FQD18N20V2TM MOSFET is versatile and can be used in a variety of applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial power management systems.
  • Consumer electronics requiring high power handling.
  • Automotive systems where high reliability and performance are critical.

Q & A

  1. What is the maximum drain-source voltage of the FQD18N20V2TM MOSFET?
    The maximum drain-source voltage is 200 V.
  2. What is the continuous drain current rating of this MOSFET?
    The continuous drain current rating is 15 A.
  3. What is the on-resistance of the FQD18N20V2TM at 10 V?
    The on-resistance is 140 mΩ @ 10 V.
  4. What is the typical turn-on delay time of this MOSFET?
    The typical turn-on delay time is 16 ns.
  5. What is the typical turn-off delay time of this MOSFET?
    The typical turn-off delay time is 38 ns.
  6. What package type is the FQD18N20V2TM available in?
    The FQD18N20V2TM is available in the TO-252AA (DPAK) package.
  7. Is the FQD18N20V2TM RoHS compliant?
    Yes, the FQD18N20V2TM is RoHS compliant.
  8. What technology is used to produce the FQD18N20V2TM?
    The FQD18N20V2TM is produced using onsemi's proprietary planar stripe and DMOS technology.
  9. In what types of applications is the FQD18N20V2TM commonly used?
    The FQD18N20V2TM is commonly used in power supplies, motor control systems, industrial power management, consumer electronics, and automotive systems.
  10. Where can I find detailed specifications for the FQD18N20V2TM?
    Detailed specifications can be found in the datasheet available on onsemi's official website and other electronic component distributors like Mouser, LCSC, and TME.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:15A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:140mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:26 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1080 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 83W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Same Series
FQD18N20V2TF
FQD18N20V2TF
MOSFET N-CH 200V 15A DPAK

Similar Products

Part Number FQD18N20V2TM FQD18N20V2TF
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 15A (Tc) 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 140mOhm @ 7.5A, 10V 140mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V 26 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1080 pF @ 25 V 1080 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 83W (Tc) 2.5W (Ta), 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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