Overview
The FQD16N25CTM is an N-Channel enhancement mode power MOSFET produced by onsemi, utilizing their proprietary planar stripe and DMOS technology. This advanced technology is designed to reduce on-state resistance and provide superior switching performance along with high avalanche energy strength. The device is suitable for a variety of high-power applications, including switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDSS) | 250 | V |
| Continuous Drain Current (ID) at TC = 25°C | 16 | A |
| Continuous Drain Current (ID) at TC = 100°C | 10.1 | A |
| Pulsed Drain Current (IDM) | 64 | A |
| Gate-Source Voltage (VGSS) | ±30 | V |
| Single Pulsed Avalanche Energy (EAS) | 432 | mJ |
| Avalanche Current (IAR) | 16 | A |
| Repetitive Avalanche Energy (EAR) | 160 | mJ |
| Power Dissipation (PD) at TC = 25°C | 160 | W |
| Thermal Resistance, Junction-to-Case (RθJC) | 0.78 | °C/W |
| Thermal Resistance, Junction-to-Ambient (RθJA) | 110 | °C/W |
| Operating and Storage Temperature Range (TJ, TSTG) | -55 to +150 | °C |
| Maximum Lead Temperature for Soldering | 300 | °C |
| Static Drain-Source On-Resistance (RDS(on)) at VGS = 10 V, ID = 8 A | 0.22 - 0.27 | Ω |
| Gate Threshold Voltage (VGS(th)) | 2.0 - 4.0 | V |
| Total Gate Charge (Qg) | 41 - 53.5 | nC |
Key Features
- 16 A, 250 V with RDS(on) = 270 mΩ (Max.) at VGS = 10 V, ID = 8 A
- Low Gate Charge (Typ. 41 nC)
- Low Crss (Typ. 68 pF)
- 100% Avalanche Tested
- Pb-Free
- Advanced planar stripe and DMOS technology for reduced on-state resistance and superior switching performance
Applications
- Switched mode power supplies
- Active power factor correction (PFC)
- Electronic lamp ballasts
Q & A
- What is the maximum drain-source voltage (VDSS) of the FQD16N25CTM?
The maximum drain-source voltage (VDSS) is 250 V.
- What is the continuous drain current (ID) at 25°C and 100°C?
The continuous drain current (ID) is 16 A at 25°C and 10.1 A at 100°C.
- What is the typical total gate charge (Qg) of the FQD16N25CTM?
The typical total gate charge (Qg) is 41 nC.
- What are the typical values for Crss and RDS(on)?
The typical values are Crss = 68 pF and RDS(on) = 0.22 - 0.27 Ω at VGS = 10 V, ID = 8 A.
- Is the FQD16N25CTM Pb-Free?
- What are the operating and storage temperature ranges for the FQD16N25CTM?
The operating and storage temperature ranges are -55 to +150 °C.
- What is the maximum lead temperature for soldering purposes?
The maximum lead temperature for soldering purposes is 300 °C.
- What are some common applications of the FQD16N25CTM?
- What is the thermal resistance, junction-to-case (RθJC), of the FQD16N25CTM?
The thermal resistance, junction-to-case (RθJC), is 0.78 °C/W.
- What is the gate threshold voltage (VGS(th)) range of the FQD16N25CTM?
The gate threshold voltage (VGS(th)) range is 2.0 - 4.0 V.
