Overview
The FQD12P10TM-F085 is a P-Channel enhancement mode power field effect transistor produced by ON Semiconductor. This device utilizes ON Semiconductor’s proprietary, planar stripe, DMOS technology, which is designed to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in both avalanche and commutation modes.
Key Specifications
| Parameter | Value |
|---|---|
| Channel Polarity | P-Channel |
| VDSS Min | -100 V |
| RDS(on) Max @ VGS = 10 V | 290 mΩ |
| VGS | ±30 V |
| VGS(th) Max | -4 V |
| ID Max | -9.4 A |
| PD Max | 2.5 W |
| Package / Case | DPAK-3 (TO-252-3) |
| Gate Charge (Qg) Typ @ VGS = 4.5 V | 21 nC |
| Ciss Typ | 620 pF |
| Coss Typ | 470 pF |
| Crss Typ | 220 pF |
Key Features
- Low Gate Charge
- Improved dV/dT capability
- AECQ-101 Qualified
- RoHS compliant
Applications
- Audio Amplifiers
- High Frequency Switching DC/DC Converters
- DC Motor Control
- Motor Control – EPS, Wipers, Fans, Seats, etc.
- Load Switch – ECU, Chassis, Body
Q & A
- What is the channel polarity of the FQD12P10TM-F085?
The FQD12P10TM-F085 is a P-Channel MOSFET.
- What is the maximum drain-source voltage (VDSS) of this MOSFET?
The maximum drain-source voltage (VDSS) is -100 V.
- What is the on-state resistance (RDS(on)) at VGS = 10 V?
The on-state resistance (RDS(on)) at VGS = 10 V is 290 mΩ.
- What are the typical gate charge values at VGS = 4.5 V and VGS = 10 V?
The typical gate charge at VGS = 4.5 V is 21 nC, and at VGS = 10 V, it is also specified but not explicitly listed here.
- Is the FQD12P10TM-F085 AECQ-101 Qualified?
- What are some common applications of the FQD12P10TM-F085?
- What is the package type of the FQD12P10TM-F085?
- Is the FQD12P10TM-F085 RoHS compliant?
- What is the maximum drain current (ID) of this MOSFET?
The maximum drain current (ID) is -9.4 A.
- What is the status of the FQD12P10TM-F085 in terms of production?
The FQD12P10TM-F085 is obsolete and no longer manufactured.
