FQB50N06TM
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onsemi FQB50N06TM

Manufacturer No:
FQB50N06TM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 50A D2PAK
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The FQB50N06TM is an N-Channel enhancement mode power MOSFET produced by onsemi, utilizing Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This device is designed to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in avalanche and commutation modes. Although the device is discontinued and not recommended for new designs, it remains relevant for existing applications and maintenance.

Key Specifications

Parameter Unit Min Typ Max
VDSS - Drain-Source Voltage V - - 60
ID - Continuous Drain Current (TC = 25°C) A - - 50
ID - Continuous Drain Current (TC = 100°C) A - - 35.4
IDM - Pulsed Drain Current A - - 200
VGSS - Gate-Source Voltage V - - ±25
RDS(on) - Static Drain-Source On-Resistance (VGS = 10 V, ID = 25 A) 0.018 - 0.022
TJ - Operating and Storage Temperature Range °C -55 - 175
PD - Power Dissipation (TA = 25°C) W - - 3.75
RθJC - Thermal Resistance, Junction to Case °C/W - - 1.24

Key Features

  • 50 A, 60 V, RDS(on) = 22 mΩ (Max.) @VGS = 10 V, ID = 25 A
  • Low Gate Charge (Typ. 31 nC)
  • Low Crss (Typ. 65 pF)
  • 100% Avalanche Tested
  • Fast switching performance
  • Improved dv/dt capability
  • 175°C Maximum Junction Temperature Rating

Applications

The FQB50N06TM is suitable for various applications, including:

  • Switched mode power supplies
  • Audio amplifiers
  • DC motor control
  • Variable switching power applications
  • Automotive systems
  • DC/DC converters
  • High efficiency switching for power management in portable and battery-operated products

Q & A

  1. What is the maximum drain-source voltage (VDSS) of the FQB50N06TM?

    The maximum drain-source voltage (VDSS) is 60 V.

  2. What is the continuous drain current (ID) at 25°C and 100°C?

    The continuous drain current (ID) is 50 A at 25°C and 35.4 A at 100°C.

  3. What is the maximum pulsed drain current (IDM)?

    The maximum pulsed drain current (IDM) is 200 A.

  4. What is the gate-source voltage (VGSS) range?

    The gate-source voltage (VGSS) range is ±25 V.

  5. What is the typical on-state resistance (RDS(on)) at VGS = 10 V and ID = 25 A?

    The typical on-state resistance (RDS(on)) is 0.018 Ω to 0.022 Ω.

  6. What is the operating and storage temperature range (TJ, TSTG)?

    The operating and storage temperature range is -55°C to +175°C.

  7. What is the power dissipation (PD) at 25°C?

    The power dissipation (PD) at 25°C is 3.75 W.

  8. What is the thermal resistance from junction to case (RθJC)?

    The thermal resistance from junction to case (RθJC) is 1.24 °C/W.

  9. What are some typical applications of the FQB50N06TM?

    Typical applications include switched mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.

  10. Is the FQB50N06TM still recommended for new designs?

    No, the FQB50N06TM is discontinued and not recommended for new designs. Please contact an onsemi representative for information on alternative parts.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:22mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:41 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1540 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.75W (Ta), 120W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Same Series
FQI50N06TU
FQI50N06TU
MOSFET N-CH 60V 50A I2PAK

Similar Products

Part Number FQB50N06TM FQB55N06TM FQB20N06TM FQB30N06TM FQB50N06LTM
Manufacturer onsemi Fairchild Semiconductor Fairchild Semiconductor onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Last Time Buy
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 55A (Tc) 20A (Tc) 30A (Tc) 52.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 5V, 10V
Rds On (Max) @ Id, Vgs 22mOhm @ 25A, 10V 20mOhm @ 27.5A, 10V 60mOhm @ 10A, 10V 40mOhm @ 15A, 10V 21mOhm @ 26.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V 46 nC @ 10 V 15 nC @ 10 V 25 nC @ 10 V 32 nC @ 5 V
Vgs (Max) ±25V ±25V ±25V ±25V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1540 pF @ 25 V 1690 pF @ 25 V 590 pF @ 25 V 945 pF @ 25 V 1630 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 3.75W (Ta), 120W (Tc) 3.75W (Ta), 133W (Tc) 3.75W (Ta), 53W (Tc) 3.75W (Ta), 79W (Tc) 3.75W (Ta), 121W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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