FQB50N06LTM
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onsemi FQB50N06LTM

Manufacturer No:
FQB50N06LTM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 52.4A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQB50N06LTM is a high-performance N-Channel MOSFET produced by onsemi. This device is designed to provide high current handling and low on-resistance, making it suitable for a variety of power management and switching applications. The MOSFET is packaged in a 3-pin D2PAK configuration, which offers good thermal performance and is widely used in industrial and automotive systems.

Key Specifications

ParameterValue
Transistor TypeN-Channel MOSFET
Current Rating52.4 A
Drain to Source Breakdown Voltage (Vdss)60 V
Drain to Source Resistance (Rds(on))17 mΩ
Typical Turn-On Delay Time20 ns
Typical Turn-Off Delay Time80 ns
Package Type3-Pin D2PAK

Key Features

  • High current rating of 52.4 A, making it suitable for high-power applications.
  • Low on-resistance of 17 mΩ, which minimizes power losses and heat generation.
  • Fast switching times with a typical turn-on delay of 20 ns and turn-off delay of 80 ns.
  • Robust D2PAK package that provides good thermal dissipation and is easy to handle in manufacturing processes.
  • High drain to source breakdown voltage of 60 V, ensuring reliability in various power management scenarios.

Applications

The FQB50N06LTM is versatile and can be used in a wide range of applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems such as battery management and power steering.
  • Industrial power management and control systems.
  • High-frequency switching circuits.

Q & A

  1. What is the current rating of the FQB50N06LTM MOSFET?
    The current rating of the FQB50N06LTM MOSFET is 52.4 A.
  2. What is the drain to source breakdown voltage of the FQB50N06LTM?
    The drain to source breakdown voltage (Vdss) is 60 V.
  3. What is the typical turn-on delay time of the FQB50N06LTM?
    The typical turn-on delay time is 20 ns.
  4. What is the typical turn-off delay time of the FQB50N06LTM?
    The typical turn-off delay time is 80 ns.
  5. What package type is the FQB50N06LTM available in?
    The FQB50N06LTM is available in a 3-pin D2PAK package.
  6. What are some common applications of the FQB50N06LTM?
    Common applications include power supplies, motor control, automotive systems, industrial power management, and high-frequency switching circuits.
  7. What is the on-resistance (Rds(on)) of the FQB50N06LTM?
    The on-resistance (Rds(on)) is 17 mΩ.
  8. Is the FQB50N06LTM suitable for high-power applications?
    Yes, the FQB50N06LTM is suitable for high-power applications due to its high current rating and low on-resistance.
  9. Where can I find detailed specifications for the FQB50N06LTM?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and RS Components.
  10. Is the FQB50N06LTM still in production?
    No, the FQB50N06LTM is not in production and is considered obsolete. However, datasheets and specifications are still available for reference.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:52.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:21mOhm @ 26.2A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1630 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.75W (Ta), 121W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Same Series
FQI50N06LTU
FQI50N06LTU
MOSFET N-CH 60V 52.4A I2PAK

Similar Products

Part Number FQB50N06LTM FQB50N06TM FQB20N06LTM FQB30N06LTM
Manufacturer onsemi onsemi Fairchild Semiconductor onsemi
Product Status Last Time Buy Obsolete Obsolete Last Time Buy
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 52.4A (Tc) 50A (Tc) 21A (Tc) 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 10V 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 21mOhm @ 26.2A, 10V 22mOhm @ 25A, 10V 55mOhm @ 10.5A, 10V 35mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 4V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 5 V 41 nC @ 10 V 13 nC @ 5 V 20 nC @ 5 V
Vgs (Max) ±20V ±25V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1630 pF @ 25 V 1540 pF @ 25 V 630 pF @ 25 V 1040 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 3.75W (Ta), 121W (Tc) 3.75W (Ta), 120W (Tc) 3.75W (Ta), 53W (Tc) 3.75W (Ta), 79W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D²PAK (TO-263) D2PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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