Overview
The FQB22P10TM is a 100V P-Channel enhancement mode power MOSFET produced by onsemi using their proprietary planar stripe and DMOS technology. This advanced technology is designed to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in avalanche and commutation modes. The device is well-suited for various low-voltage applications, including audio amplifiers, high-efficiency switching DC/DC converters, and DC motor control.
Key Specifications
| Parameter | Typical | Maximum | Units |
|---|---|---|---|
| Drain-Source Voltage (VDSS) | -100 | -100 | V |
| Drain Current (ID) - Continuous (TC = 25°C) | -22 | -22 | A |
| Drain Current (ID) - Continuous (TC = 100°C) | -15.6 | -15.6 | A |
| Drain Current (IDM) - Pulsed | -88 | -88 | A |
| Gate-Source Voltage (VGSS) | ±30 | ±30 | V |
| Single Pulsed Avalanche Energy (EAS) | 710 | 710 | mJ |
| Avalanche Current (IAR) | -22 | -22 | A |
| Repetitive Avalanche Energy (EAR) | 12.5 | 12.5 | mJ |
| Peak Diode Recovery dv/dt | -6.0 | -6.0 | V/ns |
| Power Dissipation (PD) at TA = 25°C | 3.75 | 3.75 | W |
| Operating and Storage Temperature Range (TJ, TSTG) | -55 to +175 | -55 to +175 | °C |
| Thermal Resistance, Junction-to-Case (RθJC) | -- | 1.2 | °C/W |
| Thermal Resistance, Junction-to-Ambient (RθJA) | -- | 62.5 | °C/W |
Key Features
- -22 A, -100 V, RDS(on) = 0.125 Ω @ VGS = -10 V, ID = -22 A
- Low gate charge (typical 40 nC)
- Low Crss (typical 160 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- 175°C maximum junction temperature rating
- RoHS compliant
- Qualified to AEC Q101
Applications
The FQB22P10TM is suitable for a variety of applications, including:
- Audio amplifiers
- High-efficiency switching DC/DC converters
- DC motor control
- Switched mode power supplies
- Variable switching power applications
Q & A
- What is the maximum drain-source voltage (VDSS) of the FQB22P10TM?
The maximum drain-source voltage (VDSS) is -100 V.
- What is the continuous drain current (ID) at 25°C?
The continuous drain current (ID) at 25°C is -22 A.
- What is the typical gate charge (Qg) of the FQB22P10TM?
The typical gate charge (Qg) is 40 nC.
- What is the maximum junction temperature (TJ) rating?
The maximum junction temperature (TJ) rating is 175°C.
- Is the FQB22P10TM RoHS compliant?
Yes, the FQB22P10TM is RoHS compliant.
- What is the thermal resistance, junction-to-case (RθJC), of the FQB22P10TM?
The thermal resistance, junction-to-case (RθJC), is 1.2 °C/W.
- What are some typical applications for the FQB22P10TM?
Typical applications include audio amplifiers, high-efficiency switching DC/DC converters, DC motor control, and switched mode power supplies.
- What is the single pulsed avalanche energy (EAS) of the FQB22P10TM?
The single pulsed avalanche energy (EAS) is 710 mJ.
- What is the peak diode recovery dv/dt of the FQB22P10TM?
The peak diode recovery dv/dt is -6.0 V/ns.
- What is the power dissipation (PD) at TA = 25°C?
The power dissipation (PD) at TA = 25°C is 3.75 W.
