FQA36P15
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onsemi FQA36P15

Manufacturer No:
FQA36P15
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET P-CH 150V 36A TO3PN
Delivery:
Payment:
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iso9001
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Product Introduction

Overview

The FQA36P15 is a P-Channel enhancement mode power MOSFET produced by onsemi, utilizing their proprietary planar stripe and DMOS technology. This advanced technology is designed to reduce on-state resistance, enhance switching performance, and provide high avalanche energy strength. The device is packaged in a TO-3PN through-hole configuration and is suitable for a variety of power management applications.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDSS) -150 V
Drain Current (ID) Continuous at TC = 25°C -36 A
Drain Current (ID) Continuous at TC = 100°C -25.5 A
Pulsed Drain Current (IDM) -144 A
Gate-Source Voltage (VGSS) ±30 V
On-State Resistance (RDS(on)) at VGS = -10 V, ID = -18 A 90
Gate Charge (Qg) Typical 81 nC
Reverse Transfer Capacitance (Crss) Typical 110 pF
Maximum Junction Temperature (TJ) 175 °C
Power Dissipation (PD) at TC = 25°C 294 W

Key Features

  • Low on-state resistance (RDS(on) = 90 mΩ max at VGS = -10 V, ID = -18 A)
  • Low gate charge (Typ. 81 nC)
  • Low reverse transfer capacitance (Typ. 110 pF)
  • 100% avalanche tested
  • High avalanche energy strength
  • Maximum junction temperature rating of 175°C

Applications

  • Switched mode power supplies
  • Audio amplifiers
  • DC motor control
  • Variable switching power applications

Q & A

  1. What is the maximum drain-source voltage of the FQA36P15 MOSFET? The maximum drain-source voltage is -150 V.
  2. What is the continuous drain current rating at 25°C? The continuous drain current rating at 25°C is -36 A.
  3. What is the on-state resistance of the FQA36P15? The on-state resistance is 90 mΩ max at VGS = -10 V, ID = -18 A.
  4. What are the typical gate charge and reverse transfer capacitance values? The typical gate charge is 81 nC, and the typical reverse transfer capacitance is 110 pF.
  5. What is the maximum junction temperature rating? The maximum junction temperature rating is 175°C.
  6. Is the FQA36P15 suitable for high-frequency applications? Yes, it is suitable due to its low gate charge and low on-state resistance.
  7. What are some common applications of the FQA36P15? Common applications include switched mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.
  8. What is the package type of the FQA36P15? The package type is TO-3PN through-hole.
  9. Is the FQA36P15 100% avalanche tested? Yes, it is 100% avalanche tested.
  10. What is the power dissipation rating at 25°C? The power dissipation rating at 25°C is 294 W.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:36A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:90mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:105 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3320 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):294W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3PN
Package / Case:TO-3P-3, SC-65-3
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