FQA36P15_F109
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onsemi FQA36P15_F109

Manufacturer No:
FQA36P15_F109
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET P-CH 150V 36A TO3PN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQA36P15 is a P-Channel enhancement mode power MOSFET produced by onsemi, utilizing Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced technology is designed to reduce on-state resistance, enhance switching performance, and provide high avalanche energy strength. The device is particularly suited for applications requiring high current handling and efficient switching.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDSS) -150 V
Drain Current (ID) Continuous (TC = 25°C) -36 A
Drain Current (ID) Continuous (TC = 100°C) -25.5 A
Drain Current (IDM) Pulsed -144 A
Gate-Source Voltage (VGS) ±30 V
On-State Resistance (RDS(on)) @ VGS = -10 V, ID = -18 A 90
Gate Charge (Qg) Typical @ VGS = 4.5 V 81 nC
Reverse Recovery Charge (Qrr) Typical 1.45 µC
Maximum Junction Temperature (TJ) 175 °C
Thermal Resistance, Junction-to-Case (RθJC) Maximum 0.51 °C/W
Thermal Resistance, Junction-to-Ambient (RθJA) Maximum 40 °C/W
Package Type TO-3P

Key Features

  • Low on-state resistance (RDS(on)) of 90 mΩ @ VGS = -10 V, ID = -18 A
  • Low gate charge (Qg) of 81 nC typical
  • Low reverse recovery charge (Qrr) of 1.45 µC typical
  • 100% avalanche tested
  • Maximum junction temperature rating of 175°C
  • High avalanche energy strength

Applications

  • Switched mode power supplies
  • Audio amplifiers
  • DC motor control
  • Variable switching power applications
  • Other audio and video applications

Q & A

  1. What is the drain-source voltage rating of the FQA36P15?

    The drain-source voltage (VDSS) rating is -150 V.

  2. What is the maximum continuous drain current at 25°C?

    The maximum continuous drain current (ID) at 25°C is -36 A.

  3. What is the on-state resistance of the FQA36P15?

    The on-state resistance (RDS(on)) is 90 mΩ @ VGS = -10 V, ID = -18 A.

  4. What is the typical gate charge of the FQA36P15?

    The typical gate charge (Qg) is 81 nC.

  5. What are the thermal resistance values for the FQA36P15?

    The thermal resistance from junction to case (RθJC) is 0.51 °C/W, and from junction to ambient (RθJA) is 40 °C/W.

  6. What is the maximum junction temperature rating of the FQA36P15?

    The maximum junction temperature (TJ) rating is 175°C.

  7. What types of applications is the FQA36P15 suitable for?

    The FQA36P15 is suitable for switched mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.

  8. What technology is used in the production of the FQA36P15?

    The FQA36P15 is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology.

  9. What is the package type of the FQA36P15?

    The package type is TO-3P.

  10. Is the FQA36P15 100% avalanche tested?

    Yes, the FQA36P15 is 100% avalanche tested.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:36A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:90mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:105 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3320 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):294W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3PN
Package / Case:TO-3P-3, SC-65-3
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FQA36P15_F109
FQA36P15_F109
MOSFET P-CH 150V 36A TO3PN

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