FQA36P15_F109
  • Share:

onsemi FQA36P15_F109

Manufacturer No:
FQA36P15_F109
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET P-CH 150V 36A TO3PN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQA36P15 is a P-Channel enhancement mode power MOSFET produced by onsemi, utilizing Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced technology is designed to reduce on-state resistance, enhance switching performance, and provide high avalanche energy strength. The device is particularly suited for applications requiring high current handling and efficient switching.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDSS) -150 V
Drain Current (ID) Continuous (TC = 25°C) -36 A
Drain Current (ID) Continuous (TC = 100°C) -25.5 A
Drain Current (IDM) Pulsed -144 A
Gate-Source Voltage (VGS) ±30 V
On-State Resistance (RDS(on)) @ VGS = -10 V, ID = -18 A 90
Gate Charge (Qg) Typical @ VGS = 4.5 V 81 nC
Reverse Recovery Charge (Qrr) Typical 1.45 µC
Maximum Junction Temperature (TJ) 175 °C
Thermal Resistance, Junction-to-Case (RθJC) Maximum 0.51 °C/W
Thermal Resistance, Junction-to-Ambient (RθJA) Maximum 40 °C/W
Package Type TO-3P

Key Features

  • Low on-state resistance (RDS(on)) of 90 mΩ @ VGS = -10 V, ID = -18 A
  • Low gate charge (Qg) of 81 nC typical
  • Low reverse recovery charge (Qrr) of 1.45 µC typical
  • 100% avalanche tested
  • Maximum junction temperature rating of 175°C
  • High avalanche energy strength

Applications

  • Switched mode power supplies
  • Audio amplifiers
  • DC motor control
  • Variable switching power applications
  • Other audio and video applications

Q & A

  1. What is the drain-source voltage rating of the FQA36P15?

    The drain-source voltage (VDSS) rating is -150 V.

  2. What is the maximum continuous drain current at 25°C?

    The maximum continuous drain current (ID) at 25°C is -36 A.

  3. What is the on-state resistance of the FQA36P15?

    The on-state resistance (RDS(on)) is 90 mΩ @ VGS = -10 V, ID = -18 A.

  4. What is the typical gate charge of the FQA36P15?

    The typical gate charge (Qg) is 81 nC.

  5. What are the thermal resistance values for the FQA36P15?

    The thermal resistance from junction to case (RθJC) is 0.51 °C/W, and from junction to ambient (RθJA) is 40 °C/W.

  6. What is the maximum junction temperature rating of the FQA36P15?

    The maximum junction temperature (TJ) rating is 175°C.

  7. What types of applications is the FQA36P15 suitable for?

    The FQA36P15 is suitable for switched mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.

  8. What technology is used in the production of the FQA36P15?

    The FQA36P15 is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology.

  9. What is the package type of the FQA36P15?

    The package type is TO-3P.

  10. Is the FQA36P15 100% avalanche tested?

    Yes, the FQA36P15 is 100% avalanche tested.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:36A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:90mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:105 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3320 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):294W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3PN
Package / Case:TO-3P-3, SC-65-3
0 Remaining View Similar

In Stock

-
563

Please send RFQ , we will respond immediately.

Same Series
FQA36P15_F109
FQA36P15_F109
MOSFET P-CH 150V 36A TO3PN

Related Product By Categories

STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
CSD19536KTTT
CSD19536KTTT
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
STD2NK100Z
STD2NK100Z
STMicroelectronics
MOSFET N-CH 1000V 1.85A DPAK
NTMFS4C03NT1G
NTMFS4C03NT1G
onsemi
MOSFET N-CH 30V 30A/136A 5DFN
NTMFS6H818NT1G
NTMFS6H818NT1G
onsemi
MOSFET N-CH 80V 20A/123A 5DFN
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
NTMFS002P03P8ZT1G
NTMFS002P03P8ZT1G
onsemi
MOSFET, POWER -30V P-CHANNEL, SO
NTD3055-094-1
NTD3055-094-1
onsemi
MOSFET N-CH 60V 12A IPAK
STF13NM60N-H
STF13NM60N-H
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP
FDMC8010ET30
FDMC8010ET30
onsemi
MOSFET N-CH 30V 30A/174A POWER33

Related Product By Brand

MMBZ5244BLT1G
MMBZ5244BLT1G
onsemi
DIODE ZENER 14V 225MW SOT23-3
1SMB5934BT3G
1SMB5934BT3G
onsemi
DIODE ZENER 24V 3W SMB
MJD44H11TF
MJD44H11TF
onsemi
TRANS NPN 80V 8A DPAK
MC74VHC1G32DTT1G
MC74VHC1G32DTT1G
onsemi
IC GATE OR 1CH 2-INP 5TSOP
NCP1076BBP100G
NCP1076BBP100G
onsemi
IC OFFLINE SWITCH FLYBACK 8DIP
NCP1015AP100G
NCP1015AP100G
onsemi
IC OFFLINE SWITCH FLYBACK 7DIP
NSV45035JZT1G
NSV45035JZT1G
onsemi
IC REG CCR 45V 35MA SOT223
LC898121XA-MH
LC898121XA-MH
onsemi
IC MOTOR DRVR 2.6V-3.6V 40WLCSP
NCP302045MNTWG
NCP302045MNTWG
onsemi
IC PWR DRIVER P-CHAN 2:1 31PQFN
MC34161DMR2G
MC34161DMR2G
onsemi
IC SUPERVISOR 2 CHANNEL MICRO8
NCV4274ADS50R4G
NCV4274ADS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK
LM2903DR2GH
LM2903DR2GH
onsemi
FIXED POSITIVE LDO REGULATOR