Overview
The FDV304P-F169 is a P-Channel enhancement mode field effect transistor (FET) produced by onsemi. This device is fabricated using onsemi's proprietary high cell density DMOS technology, which is designed to minimize on-state resistance even at low gate drive conditions. It is particularly suited for battery power applications such as notebook computers and cellular phones due to its excellent on-state resistance at gate drive voltages as low as 2.5 V.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDSS) | -25 | V |
| Gate-Source Voltage (VGSS) | -8 | V |
| Continuous Drain Current (ID) | -0.46 | A |
| Pulsed Drain Current (ID) | -1.5 | A |
| Maximum Power Dissipation (PD) | 0.35 | W |
| On-State Resistance (RDS(on)) at VGS = -4.5 V | 1.1 | Ω |
| On-State Resistance (RDS(on)) at VGS = -2.7 V | 1.5 | Ω |
| Gate-Source Threshold Voltage (VGS(th)) | < 1.5 | V |
| Operating and Storage Temperature Range | -55 to 150 | °C |
| ESD Rating (Human Body Model) | 6.0 kV | |
| Package Type | SOT-23-3 (TO-236) |
Key Features
- Very low on-state resistance, especially at low gate drive conditions (RDS(on) = 1.1 Ω @ VGS = -4.5 V and RDS(on) = 1.5 Ω @ VGS = -2.7 V).
- Low level gate drive requirements, allowing direct operation in 3 V circuits with VGS(th) < 1.5 V.
- Gate-Source Zener for ESD ruggedness, with a rating of 6 kV Human Body Model.
- Compact industry standard SOT-23 surface mount package.
- Pb-Free and Halide-Free, ensuring environmental compliance.
Applications
- Battery power applications such as notebook computers and cellular phones.
- Load switching and battery protection circuits.
Q & A
- What is the maximum drain-source voltage (VDSS) of the FDV304P-F169? The maximum drain-source voltage is -25 V.
- What is the continuous drain current (ID) rating of the FDV304P-F169? The continuous drain current is -0.46 A.
- What is the on-state resistance (RDS(on)) at VGS = -4.5 V? The on-state resistance is 1.1 Ω at VGS = -4.5 V.
- What is the gate-source threshold voltage (VGS(th)) of the FDV304P-F169? The gate-source threshold voltage is less than 1.5 V.
- Is the FDV304P-F169 Pb-Free and Halide-Free? Yes, the device is Pb-Free and Halide-Free.
- What is the operating and storage temperature range of the FDV304P-F169? The operating and storage temperature range is -55 to 150 °C.
- What is the ESD rating of the FDV304P-F169? The ESD rating is 6.0 kV Human Body Model.
- In what package type is the FDV304P-F169 available? The device is available in the SOT-23-3 (TO-236) package.
- What are some typical applications of the FDV304P-F169? Typical applications include battery power management in devices like notebook computers and cellular phones.
- Is the FDV304P-F169 RoHS compliant? Yes, the device is RoHS compliant.
