FDS6679AZ
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onsemi FDS6679AZ

Manufacturer No:
FDS6679AZ
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 13A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDS6679AZ is a P-Channel MOSFET produced by onsemi, utilizing the advanced PowerTrench process. This device is designed to minimize on-state resistance and is optimized for low RDS(on) and high performance in various applications. The FDS6679AZ features high power and current handling capabilities, making it suitable for load switch and power management applications in notebooks, servers, and battery packs.

Key Specifications

ParameterRatingUnit
Drain to Source Voltage (VDS)−30V
Gate to Source Voltage (VGS)±25V
Continuous Drain Current (ID)−20 A (TC = 25°C), −11.5 A (TA = 25°C)A
Pulsed Drain Current (ID)−32 AA
Power Dissipation (PD)41 W (TC = 25°C), 2.3 W (TA = 25°C)W
Operating and Storage Junction Temperature Range (TJ, TSTG)−55 to +150°C
Static Drain to Source On Resistance (rDS(on))8.6 - 10 mΩ at VGS = −10 V, ID = −11.5 A
Thermal Resistance, Junction to Case (RθJC)3.0 °C/W°C/W
Thermal Resistance, Junction to Ambient (RθJA)53 °C/W°C/W

Key Features

  • High Performance Trench Technology for extremely low rDS(on)
  • Max rDS(on) = 10 mΩ at VGS = −10 V, ID = −11.5 A
  • Max rDS(on) = 18 mΩ at VGS = −4.5 V, ID = −8.5 A
  • HBM ESD Protection Level of 8 kV Typical
  • Extended VGSS range (−25 V) for Battery Applications
  • High Power and Current Handling Capability
  • Pb−Free and Halide Free

Applications

  • Load Switch in Notebook and Server
  • Notebook Battery Pack Power Management

Q & A

  1. What is the maximum drain to source voltage (VDS) for the FDS6679AZ?
    The maximum drain to source voltage (VDS) is −30 V.
  2. What is the continuous drain current (ID) rating at 25°C?
    The continuous drain current (ID) rating at 25°C is −20 A for TC and −11.5 A for TA.
  3. What is the thermal resistance from junction to case (RθJC) for this MOSFET?
    The thermal resistance from junction to case (RθJC) is 3.0 °C/W.
  4. Does the FDS6679AZ have ESD protection?
    Yes, it has an HBM ESD Protection Level of 8 kV Typical.
  5. What are the typical applications for the FDS6679AZ?
    The typical applications include load switches in notebooks and servers, and notebook battery pack power management.
  6. Is the FDS6679AZ Pb−Free and Halide Free?
    Yes, the FDS6679AZ is Pb−Free and Halide Free.
  7. What is the maximum power dissipation (PD) at 25°C?
    The maximum power dissipation (PD) at 25°C is 41 W for TC and 2.3 W for TA.
  8. What is the operating and storage junction temperature range for the FDS6679AZ?
    The operating and storage junction temperature range is −55 to +150 °C.
  9. What is the static drain to source on resistance (rDS(on)) at VGS = −10 V and ID = −11.5 A?
    The static drain to source on resistance (rDS(on)) is 8.6 - 10 mΩ.
  10. What package type is the FDS6679AZ available in?
    The FDS6679AZ is available in a WDFN8 3.3x3.3, 0.65P package.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:13A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9.3mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:96 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:3845 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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In Stock

$0.91
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Similar Products

Part Number FDS6679AZ FDS6679Z FDS6673AZ
Manufacturer onsemi Fairchild Semiconductor Fairchild Semiconductor
Product Status Active Obsolete Obsolete
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 13A (Ta) 13A (Ta) 14.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.3mOhm @ 13A, 10V 9mOhm @ 13A, 10V 7.2mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 96 nC @ 10 V 94 nC @ 10 V 118 nC @ 10 V
Vgs (Max) ±25V +20V, -25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 3845 pF @ 15 V 3803 pF @ 15 V 4480 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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