Overview
The FDS6679AZ is a P-Channel MOSFET produced by onsemi, utilizing the advanced PowerTrench process. This device is designed to minimize on-state resistance and is optimized for low RDS(on) and high performance in various applications. The FDS6679AZ features high power and current handling capabilities, making it suitable for load switch and power management applications in notebooks, servers, and battery packs.
Key Specifications
Parameter | Rating | Unit |
---|---|---|
Drain to Source Voltage (VDS) | −30 | V |
Gate to Source Voltage (VGS) | ±25 | V |
Continuous Drain Current (ID) | −20 A (TC = 25°C), −11.5 A (TA = 25°C) | A |
Pulsed Drain Current (ID) | −32 A | A |
Power Dissipation (PD) | 41 W (TC = 25°C), 2.3 W (TA = 25°C) | W |
Operating and Storage Junction Temperature Range (TJ, TSTG) | −55 to +150 | °C |
Static Drain to Source On Resistance (rDS(on)) | 8.6 - 10 mΩ at VGS = −10 V, ID = −11.5 A | mΩ |
Thermal Resistance, Junction to Case (RθJC) | 3.0 °C/W | °C/W |
Thermal Resistance, Junction to Ambient (RθJA) | 53 °C/W | °C/W |
Key Features
- High Performance Trench Technology for extremely low rDS(on)
- Max rDS(on) = 10 mΩ at VGS = −10 V, ID = −11.5 A
- Max rDS(on) = 18 mΩ at VGS = −4.5 V, ID = −8.5 A
- HBM ESD Protection Level of 8 kV Typical
- Extended VGSS range (−25 V) for Battery Applications
- High Power and Current Handling Capability
- Pb−Free and Halide Free
Applications
- Load Switch in Notebook and Server
- Notebook Battery Pack Power Management
Q & A
- What is the maximum drain to source voltage (VDS) for the FDS6679AZ?
The maximum drain to source voltage (VDS) is −30 V. - What is the continuous drain current (ID) rating at 25°C?
The continuous drain current (ID) rating at 25°C is −20 A for TC and −11.5 A for TA. - What is the thermal resistance from junction to case (RθJC) for this MOSFET?
The thermal resistance from junction to case (RθJC) is 3.0 °C/W. - Does the FDS6679AZ have ESD protection?
Yes, it has an HBM ESD Protection Level of 8 kV Typical. - What are the typical applications for the FDS6679AZ?
The typical applications include load switches in notebooks and servers, and notebook battery pack power management. - Is the FDS6679AZ Pb−Free and Halide Free?
Yes, the FDS6679AZ is Pb−Free and Halide Free. - What is the maximum power dissipation (PD) at 25°C?
The maximum power dissipation (PD) at 25°C is 41 W for TC and 2.3 W for TA. - What is the operating and storage junction temperature range for the FDS6679AZ?
The operating and storage junction temperature range is −55 to +150 °C. - What is the static drain to source on resistance (rDS(on)) at VGS = −10 V and ID = −11.5 A?
The static drain to source on resistance (rDS(on)) is 8.6 - 10 mΩ. - What package type is the FDS6679AZ available in?
The FDS6679AZ is available in a WDFN8 3.3x3.3, 0.65P package.