FDN5630
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onsemi FDN5630

Manufacturer No:
FDN5630
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 1.7A SUPERSOT3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDN5630 is an N-Channel MOSFET produced by onsemi, designed to enhance the efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS(on) in a compact SOT23 footprint, leveraging onsemi's POWERTRENCH technology for faster switching and higher overall efficiency with reduced board space.

Key Specifications

Parameter Rating Unit
Drain-Source Voltage (VDSS) 60 V
Gate-Source Voltage (VGSS) ±20 V
Continuous Drain Current (ID) 1.7 A
Pulsed Drain Current 10 A
Power Dissipation (PD) 0.5 W
On-Resistance (RDS(on)) @ VGS = 10 V 0.100 Ω Ω
On-Resistance (RDS(on)) @ VGS = 6 V 0.120 Ω Ω
Gate Charge (Qg) 10 nC nC
Input Capacitance (Ciss) 560 pF pF
Operating and Storage Junction Temperature Range (TJ, Tstg) -55 to +150 °C
Thermal Resistance, Junction-to-Ambient (RθJA) 250 °C/W °C/W
Thermal Resistance, Junction-to-Case (RθJC) 75 °C/W °C/W

Key Features

  • Very low RDS(on) in a small SOT23 footprint
  • Optimized for use in high frequency DC/DC converters
  • Low gate charge
  • Very fast switching
  • Pb-free and halogen-free
  • SuperSOT-3 package provides low RDS(on) in a compact footprint

Applications

  • DC/DC converters
  • Motor drives

Q & A

  1. What is the maximum drain-source voltage (VDSS) of the FDN5630 MOSFET?

    The maximum drain-source voltage (VDSS) is 60 V.

  2. What is the continuous drain current (ID) rating of the FDN5630?

    The continuous drain current (ID) rating is 1.7 A.

  3. What is the on-resistance (RDS(on)) of the FDN5630 at VGS = 10 V?

    The on-resistance (RDS(on)) at VGS = 10 V is 0.100 Ω.

  4. What is the gate charge (Qg) of the FDN5630?

    The gate charge (Qg) is 10 nC at VGS = 10 V.

  5. What are the typical applications of the FDN5630 MOSFET?

    The FDN5630 is typically used in DC/DC converters and motor drives.

  6. What technology does the FDN5630 use to enhance its performance?

    The FDN5630 uses onsemi's POWERTRENCH technology for faster switching and higher efficiency.

  7. What is the thermal resistance, junction-to-ambient (RθJA), of the FDN5630?

    The thermal resistance, junction-to-ambient (RθJA), is 250 °C/W.

  8. Is the FDN5630 Pb-free and halogen-free?

    Yes, the FDN5630 is Pb-free and halogen-free.

  9. What package type does the FDN5630 come in?

    The FDN5630 comes in a SuperSOT-3 (SOT23-3) package.

  10. What is the operating and storage junction temperature range of the FDN5630?

    The operating and storage junction temperature range is -55 to +150 °C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:100mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:400 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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