FDN360P
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onsemi FDN360P

Manufacturer No:
FDN360P
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 2A SUPERSOT3
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The FDN360P is a P-Channel Logic Level MOSFET produced by onsemi using their advanced PowerTrench process. This technology is designed to minimize on-state resistance while maintaining low gate charge, resulting in superior switching performance. The device is particularly suited for low voltage and battery-powered applications where low in-line power loss and fast switching are critical.

Key Specifications

ParameterTest ConditionsMinTypMaxUnit
Drain-Source Voltage (VDSS)VGS = 0 V, ID = -250 µA-30--V
Gate-Source Voltage (VGSS)--±20-V
Drain Current (ID) Continuous--2--A
Drain Current (ID) Pulsed--10--A
On-Resistance (RDS(ON)) @ VGS = -10 V-80-
On-Resistance (RDS(ON)) @ VGS = -4.5 V-125-
Gate Charge (Qg)VDS = -15 V, ID = -3.6 A, VGS = -10 V-6.29nC
Thermal Resistance, Junction-to-Ambient (RθJA)--250°C/W
Operating and Storage Junction Temperature Range--55 to +150-°C

Key Features

  • High performance trench technology for extremely low RDS(ON)
  • Low gate charge (6.2 nC typical) for superior switching performance
  • High power version of industry standard SOT-23 package with 30% higher power handling capability
  • Pb-Free and RoHS compliant
  • Low in-line power loss and fast switching capabilities

Applications

The FDN360P is well-suited for low voltage and battery-powered applications, including but not limited to:

  • Portable electronics
  • Power management circuits
  • DC-DC converters
  • Motor control and drive circuits
  • Switching power supplies

Q & A

  1. What is the maximum drain-source voltage of the FDN360P?
    The maximum drain-source voltage (VDSS) is -30 V.
  2. What is the typical on-resistance of the FDN360P at VGS = -10 V?
    The typical on-resistance (RDS(ON)) at VGS = -10 V is 80 mΩ.
  3. What is the gate charge of the FDN360P?
    The typical gate charge (Qg) is 6.2 nC.
  4. What is the thermal resistance, junction-to-ambient (RθJA), of the FDN360P?
    The thermal resistance, junction-to-ambient (RθJA), is 250 °C/W.
  5. Is the FDN360P Pb-Free and RoHS compliant?
    Yes, the FDN360P is Pb-Free and RoHS compliant.
  6. What is the maximum continuous drain current of the FDN360P?
    The maximum continuous drain current (ID) is -2 A.
  7. What is the maximum pulsed drain current of the FDN360P?
    The maximum pulsed drain current (ID) is -10 A.
  8. What package type is the FDN360P available in?
    The FDN360P is available in a high power version of the industry standard SOT-23 package.
  9. What are some typical applications of the FDN360P?
    The FDN360P is typically used in low voltage and battery-powered applications such as portable electronics, power management circuits, DC-DC converters, motor control and drive circuits, and switching power supplies.
  10. What is the operating and storage junction temperature range of the FDN360P?
    The operating and storage junction temperature range is -55 to +150 °C.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:80mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:298 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number FDN360P FDN340P
Manufacturer onsemi onsemi
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 20 V
Current - Continuous Drain (Id) @ 25°C 2A (Ta) 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 80mOhm @ 2A, 10V 70mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id 3V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 10 V 10 nC @ 4.5 V
Vgs (Max) ±20V ±8V
Input Capacitance (Ciss) (Max) @ Vds 298 pF @ 15 V 779 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 500mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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