Overview
The FDN340P is a single P-Channel Logic Level MOSFET produced by onsemi, utilizing their advanced POWERTRENCH process. This technology is designed to minimize on-state resistance while maintaining low gate charge, resulting in superior switching performance. The device is particularly suited for portable electronics applications, including load switching, power management, battery charging circuits, and DC-DC conversion.
Key Specifications
| Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| BVDSS (Drain-Source Breakdown Voltage) | VGS = 0 V, ID = −250 µA | -20 | - | - | V |
| VGS(th) (Gate Threshold Voltage) | VDS = VGS, ID = −250 µA | -0.4 | -0.8 | -1.5 | V |
| RDS(on) (Static Drain-Source On-Resistance) | VGS = −4.5 V, ID = −2 A | - | 60 | 70 | mΩ |
| RDS(on) (Static Drain-Source On-Resistance) | VGS = −2.5 V, ID = −1.7 A | - | 82 | 110 | mΩ |
| ID (Drain Current) | Continuous | - | - | -2 | A |
| PD (Power Dissipation) | Single Operation | - | - | 0.46 | W |
| TJ (Operating and Storage Junction Temperature Range) | - | -55 | - | 150 | °C |
| Qg (Total Gate Charge) | VDS = −10 V, ID = −3.5 A, VGS = −4.5 V | - | 7.2 | 10 | nC |
Key Features
- Current rating of −2 A and voltage rating of 20 V.
- Low on-state resistance: RDS(ON) = 70 mΩ @ VGS = −4.5 V and RDS(ON) = 110 mΩ @ VGS = −2.5 V.
- Low gate charge: 7.2 nC typical.
- High performance trench technology for extremely low RDS(ON).
- High power version of the industry standard SOT-23 package with 30% higher power handling capability.
- Pb-free, halogen-free/BFR-free, and RoHS compliant.
Applications
The FDN340P is well suited for various applications in portable electronics, including:
- Load switching and power management.
- Battery charging circuits.
- DC-DC conversion.
Q & A
- What is the maximum drain current rating of the FDN340P?
The maximum continuous drain current rating is −2 A, and the pulsed drain current rating is −10 A.
- What is the typical on-state resistance of the FDN340P?
The typical on-state resistance (RDS(ON)) is 70 mΩ at VGS = −4.5 V and 110 mΩ at VGS = −2.5 V.
- What is the gate charge of the FDN340P?
The total gate charge (Qg) is typically 7.2 nC.
- What is the operating junction temperature range of the FDN340P?
The operating and storage junction temperature range is −55°C to +150°C.
- Is the FDN340P RoHS compliant?
- What package type is the FDN340P available in?
The FDN340P is available in a high power version of the industry standard SOT-23 package.
- What are the typical applications for the FDN340P?
The FDN340P is typically used in load switching, power management, battery charging circuits, and DC-DC conversion in portable electronics.
- What is the thermal resistance of the FDN340P?
The thermal resistance (RθJA) is 250°C/W when mounted on a specific copper pad, and RθJC is 75°C/W.
- How many units are typically shipped per reel?
The FDN340P is shipped in reels of 3000 units.
- What is the forward transconductance of the FDN340P?
The forward transconductance (gFS) is typically 9 S at VDS = −4.5 V and ID = −2 A.
