FDN352AP
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onsemi FDN352AP

Manufacturer No:
FDN352AP
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 1.3A SUPERSOT3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDN352AP is a P-Channel Logic Level MOSFET produced by onsemi, utilizing an advanced Power Trench process. This technology is designed to minimize on-state resistance, enhancing the overall performance of the device. The MOSFET is packaged in a SOT-23-3 surface mount configuration, making it suitable for a variety of applications where space is a concern.

Key Specifications

ParameterValue
Voltage Rating (Vds)-30 V
Current Rating (Id)1.3 A
Power Dissipation (Pd)500 mW
On-State Resistance (Rds(on))300 mΩ @ Vgs = 4.5 V
Threshold Voltage (Vth)2.5 V @ Id = 250 μA
Package TypeSOT-23-3

Key Features

  • Advanced Power Trench process for low on-state resistance
  • P-Channel Logic Level operation
  • Surface mount SOT-23-3 package for compact design
  • Low threshold voltage for easy switching
  • High current and voltage ratings suitable for various applications

Applications

The FDN352AP is versatile and can be used in a range of applications, including but not limited to:

  • Power management and switching circuits
  • DC-DC converters and power supplies
  • Motor control and drive systems
  • Audio and video equipment
  • General-purpose switching and amplification

Q & A

  1. What is the voltage rating of the FDN352AP MOSFET?
    The voltage rating (Vds) of the FDN352AP is -30 V.
  2. What is the current rating of the FDN352AP MOSFET?
    The current rating (Id) of the FDN352AP is 1.3 A.
  3. What is the power dissipation of the FDN352AP MOSFET?
    The power dissipation (Pd) of the FDN352AP is 500 mW.
  4. What is the on-state resistance of the FDN352AP MOSFET?
    The on-state resistance (Rds(on)) of the FDN352AP is 300 mΩ @ Vgs = 4.5 V.
  5. What is the threshold voltage of the FDN352AP MOSFET?
    The threshold voltage (Vth) of the FDN352AP is 2.5 V @ Id = 250 μA.
  6. What package type is the FDN352AP MOSFET available in?
    The FDN352AP MOSFET is available in a SOT-23-3 surface mount package.
  7. What process technology is used in the FDN352AP MOSFET?
    The FDN352AP MOSFET uses an advanced Power Trench process.
  8. Is the FDN352AP suitable for high-frequency applications?
    Yes, the FDN352AP can be used in high-frequency applications due to its low on-state resistance and fast switching characteristics.
  9. Can the FDN352AP be used in motor control systems?
    Yes, the FDN352AP can be used in motor control and drive systems due to its high current and voltage ratings.
  10. Is the FDN352AP RoHS compliant?
    Yes, the FDN352AP is RoHS compliant.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:180mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.9 nC @ 4.5 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:150 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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