Overview
The FDMS86300DC is a high-performance N-Channel MOSFET produced by onsemi, utilizing their advanced POWERTRENCH® process and DUAL COOL® package technology. This device is designed to offer the lowest on-state resistance (rDS(on)) while maintaining excellent switching performance and thermal characteristics. The FDMS86300DC is particularly suited for applications requiring high current handling and efficient thermal management.
Key Specifications
| Parameter | Value | Units |
|---|---|---|
| Drain to Source Voltage (VDS) | 80 | V |
| Gate to Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) | 110 | A |
| Maximum Power Dissipation (PD) | 125 | W |
| Operating and Storage Junction Temperature Range (TJ, TSTG) | −55 to +150 | °C |
| Gate to Source Threshold Voltage (VGS(th)) | 2.5 to 4.5 | V |
| Static Drain to Source On Resistance (rDS(on)) at VGS = 10 V, ID = 24 A | 2.6 to 3.1 | mΩ |
| Thermal Resistance, Junction to Case (Top Source) (RθJC) | 2.3 | °C/W |
| Thermal Resistance, Junction to Case (Bottom Drain) (RθJC) | 1.0 | °C/W |
| Total Gate Charge (Qg) | 72 | nC |
Key Features
- DUAL COOL® Top Side Cooling PQFN package for enhanced thermal performance.
- Low on-state resistance (rDS(on)) of 3.1 mΩ at VGS = 10 V, ID = 24 A.
- High performance technology for extremely low rDS(on) and excellent switching characteristics.
- 100% UIL Tested for reliability.
- RoHS Compliant.
Applications
- Synchronous Rectifier for DC/DC Converters.
- Telecom Secondary Side Rectification.
- High End Server/Workstation Vcore Low Side.
Q & A
- What is the maximum drain to source voltage (VDS) of the FDMS86300DC MOSFET?
The maximum drain to source voltage (VDS) is 80 V.
- What is the maximum continuous drain current (ID) of the FDMS86300DC MOSFET?
The maximum continuous drain current (ID) is 110 A.
- What is the typical on-state resistance (rDS(on)) of the FDMS86300DC MOSFET at VGS = 10 V and ID = 24 A?
The typical on-state resistance (rDS(on)) is 3.1 mΩ.
- What is the thermal resistance, junction to case (RθJC), for the top source of the FDMS86300DC MOSFET?
The thermal resistance, junction to case (RθJC), for the top source is 2.3 °C/W.
- Is the FDMS86300DC MOSFET RoHS compliant?
- What are some typical applications of the FDMS86300DC MOSFET?
Typical applications include synchronous rectifiers for DC/DC converters, telecom secondary side rectification, and high-end server/workstation Vcore low side.
- What is the maximum gate to source voltage (VGS) of the FDMS86300DC MOSFET?
The maximum gate to source voltage (VGS) is ±20 V.
- What is the total gate charge (Qg) of the FDMS86300DC MOSFET?
The total gate charge (Qg) is 72 nC.
- What is the package type of the FDMS86300DC MOSFET?
The package type is DFN8 (DUAL COOL®).
- What are the operating and storage junction temperature ranges for the FDMS86300DC MOSFET?
The operating and storage junction temperature ranges are −55 to +150 °C.
- What is the maximum power dissipation (PD) of the FDMS86300DC MOSFET at TC = 25°C?
The maximum power dissipation (PD) at TC = 25°C is 125 W.
