Overview
The FDMS86200DC is an N-Channel MOSFET produced by onsemi, utilizing their advanced POWERTRENCH® process and incorporating Shielded Gate technology. This device is designed to offer low on-state resistance (rDS(on)) while maintaining excellent switching performance. The DUAL COOL® package technology enhances thermal management, making it suitable for high-power applications.
Key Specifications
| Parameter | Unit | Typical Value | Maximum Value |
|---|---|---|---|
| VDS (Drain to Source Voltage) | V | - | 150 |
| ID (Drain Current) | A | - | 40 |
| rDS(on) at VGS = 10 V, ID = 9.3 A | mΩ | 14 | 17 |
| rDS(on) at VGS = 6 V, ID = 7.8 A | mΩ | 17 | 25 |
| gFS (Forward Transconductance) at VDS = 10 V, ID = 9.3 A | S | 32 | - |
| Ciss (Input Capacitance) at VDS = 75 V, VGS = 0 V, f = 1 MHz | pF | 2110 | 2955 |
| Coss (Output Capacitance) | pF | 205 | 290 |
| Crss (Reverse Transfer Capacitance) | pF | 8.1 | 15 |
| Rg (Gate Resistance) | Ω | 0.1 | 3.0 |
| td(on) (Turn-On Delay Time) at VDD = 75 V, ID = 9.3 A, VGS = 10 V | ns | 16 | 29 |
| tr (Rise Time) | ns | 4 | 10 |
| td(off) (Turn-Off Delay Time) | ns | 23 | 37 |
| tf (Fall Time) | ns | 5 | 10 |
Key Features
- Shielded Gate MOSFET Technology: Enhances switching performance and reduces on-state resistance.
- DUAL COOL® Top Side Cooling DFN8 Package: Improves thermal management by allowing heat dissipation from both the top and bottom of the package.
- Low rDS(on): Maximum rDS(on) of 17 mΩ at VGS = 10 V, ID = 9.3 A, and 25 mΩ at VGS = 6 V, ID = 7.8 A.
- High Performance Technology: Optimized for low on-state resistance and superior switching characteristics.
- 100% UIL Tested: Ensures reliability and performance under various operating conditions.
Applications
- Power Management: Suitable for high-power applications such as DC-DC converters, power supplies, and motor control systems.
- Industrial Automation: Used in industrial automation equipment, including drives and control systems.
- Automotive Systems: Applicable in automotive systems requiring high power and efficient thermal management.
- Renewable Energy Systems: Can be used in solar and wind power systems for efficient power conversion.
Q & A
- What is the maximum drain to source voltage (VDS) of the FDMS86200DC?
The maximum drain to source voltage (VDS) is 150 V.
- What is the maximum drain current (ID) of the FDMS86200DC?
The maximum drain current (ID) is 40 A.
- What is the typical on-state resistance (rDS(on)) at VGS = 10 V and ID = 9.3 A?
The typical on-state resistance (rDS(on)) is 14 mΩ, with a maximum of 17 mΩ.
- What is the package type of the FDMS86200DC?
The package type is DUAL COOL® Top Side Cooling DFN8.
- What are the key features of the Shielded Gate technology in the FDMS86200DC?
The Shielded Gate technology enhances switching performance and reduces on-state resistance.
- What are some typical applications of the FDMS86200DC?
Typical applications include power management, industrial automation, automotive systems, and renewable energy systems.
- What is the forward transconductance (gFS) at VDS = 10 V and ID = 9.3 A?
The forward transconductance (gFS) is 32 S.
- What are the input, output, and reverse transfer capacitances of the FDMS86200DC?
The input capacitance (Ciss) is 2110-2955 pF, the output capacitance (Coss) is 205-290 pF, and the reverse transfer capacitance (Crss) is 8.1-15 pF.
- What is the gate resistance (Rg) of the FDMS86200DC?
The gate resistance (Rg) is 0.1-3.0 Ω.
- What are the turn-on and turn-off delay times of the FDMS86200DC?
The turn-on delay time (td(on)) is 16-29 ns, and the turn-off delay time (td(off)) is 23-37 ns.
