Overview
The FDMS86263P is a P-Channel MOSFET produced by onsemi, utilizing their advanced POWERTRENCH technology. This high-density process is designed to minimize on-state resistance and optimize switching performance. The device is particularly suited for fast switching and load switch applications, ensuring high efficiency and reliability. It is also 100% UIL tested, Pb-free, and RoHS compliant, making it environmentally friendly and compliant with regulatory standards.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (VDS) | -150 | V |
| Gate to Source Voltage (VGS) | ±25 | V |
| Continuous Drain Current (ID) | -22 | A |
| Pulsed Drain Current (ID) | -4.4 | A |
| Static Drain to Source On Resistance (rDS(on)) at VGS = -10 V, ID = -4.4 A | 53 | mΩ |
| Static Drain to Source On Resistance (rDS(on)) at VGS = -6 V, ID = -4 A | 64 | mΩ |
| Thermal Resistance, Junction to Case (RθJC) | 1.2 | °C/W |
| Thermal Resistance, Junction to Ambient (RθJA) | 50 | °C/W |
| Operating and Storage Junction Temperature Range | -55 to +150 | °C |
Key Features
- Very low Rds-on in mid-voltage P-Channel silicon technology
- Optimized for low Qg and fast switching applications
- Optimized for load switch applications
- 100% UIL tested
- Pb-free and RoHS compliant
- High density process to minimize on-state resistance
- Superior switching performance
Applications
- Active Clamp Switch
- Load Switch
Q & A
- What is the maximum drain to source voltage (VDS) of the FDMS86263P?
The maximum drain to source voltage (VDS) is -150 V. - What is the maximum continuous drain current (ID) of the FDMS86263P?
The maximum continuous drain current (ID) is -22 A at TC = 25°C. - What is the typical on-state resistance (rDS(on)) at VGS = -10 V and ID = -4.4 A?
The typical on-state resistance (rDS(on)) is 53 mΩ at VGS = -10 V and ID = -4.4 A. - Is the FDMS86263P Pb-free and RoHS compliant?
Yes, the FDMS86263P is Pb-free and RoHS compliant. - What are the primary applications of the FDMS86263P?
The primary applications include active clamp switches and load switches. - What is the thermal resistance, junction to case (RθJC), of the FDMS86263P?
The thermal resistance, junction to case (RθJC), is 1.2 °C/W. - What is the operating and storage junction temperature range of the FDMS86263P?
The operating and storage junction temperature range is -55 to +150 °C. - What is the gate to source threshold voltage (VGS(th)) of the FDMS86263P?
The gate to source threshold voltage (VGS(th)) is between -2 to -4 V. - What is the maximum power dissipation (PD) of the FDMS86263P at TC = 25°C?
The maximum power dissipation (PD) is 104 W at TC = 25°C. - What is the turn-on delay time (td(on)) of the FDMS86263P?
The turn-on delay time (td(on)) is between 17 to 31 ns.
