Overview
The FDMS86263P is a P-Channel MOSFET produced by onsemi, utilizing their advanced PowerTrench® technology. This high-density process is designed to minimize on-state resistance and optimize for superior switching performance. The device is suitable for a wide range of applications, including fast switching and load switch applications. It is 100% UIL tested and is RoHS compliant, ensuring environmental sustainability and reliability.
Key Specifications
| Parameter | Ratings | Unit |
|---|---|---|
| VDS (Drain to Source Voltage) | -150 | V |
| VGS (Gate to Source Voltage) | ±25 | V |
| ID (Drain Current) Continuous | -22 A | A |
| rDS(on) (Static Drain to Source On Resistance) at VGS = -10 V, ID = -4.4 A | 53 mΩ | mΩ |
| rDS(on) (Static Drain to Source On Resistance) at VGS = -6 V, ID = -4 A | 64 mΩ | mΩ |
| PD (Power Dissipation) at TC = 25°C | 104 W | W |
| TJ, TSTG (Operating and Storage Junction Temperature Range) | -55 to +150 °C | °C |
| RθJC (Thermal Resistance, Junction to Case) | 1.2 °C/W | °C/W |
| RθJA (Thermal Resistance, Junction to Ambient) | 50 °C/W | °C/W |
Key Features
- Very low Rds-on in mid-voltage P-Channel silicon technology optimized for low Qg.
- Optimized for fast switching applications as well as load switch applications.
- 100% UIL tested for reliability.
- Rohs compliant, ensuring environmental sustainability.
- High-density PowerTrench® technology to minimize on-state resistance and enhance switching performance.
Applications
- Active Clamp Switch
- Load Switch
- General usage in various power management and switching applications.
Q & A
- What is the maximum drain to source voltage (VDS) of the FDMS86263P? The maximum VDS is -150 V.
- What is the maximum continuous drain current (ID) of the FDMS86263P? The maximum continuous ID is -22 A.
- What is the typical on-state resistance (rDS(on)) at VGS = -10 V and ID = -4.4 A? The typical rDS(on) is 53 mΩ.
- Is the FDMS86263P RoHS compliant? Yes, the FDMS86263P is RoHS compliant.
- What are the typical applications of the FDMS86263P? Typical applications include active clamp switches and load switches.
- What is the thermal resistance (RθJC) of the FDMS86263P? The thermal resistance (RθJC) is 1.2 °C/W.
- What is the maximum power dissipation (PD) at TC = 25°C? The maximum power dissipation is 104 W.
- What is the operating and storage junction temperature range (TJ, TSTG) of the FDMS86263P? The range is -55 to +150 °C.
- Is the FDMS86263P 100% UIL tested? Yes, the FDMS86263P is 100% UIL tested.
- What technology is used in the production of the FDMS86263P? The FDMS86263P is produced using onsemi’s advanced PowerTrench® technology.
