Overview
The FDMS86163P is a P-Channel MOSFET produced by onsemi, utilizing their advanced POWERTRENCH process. This device is designed to minimize on-state resistance while maintaining superior switching performance. It is optimized for fast switching applications as well as load switch applications. The MOSFET is Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Channel Type | P | |
| Maximum Continuous Drain Current | 7.9 A | A |
| Maximum Drain-Source Voltage | 100 V | V |
| Package Type | PQFN8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain-Source Resistance | 36 mΩ (at VGS = -10 V, ID = -7.9 A) | mΩ |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | -2 V | V |
| Maximum Power Dissipation | 104 W | W |
| Maximum Gate-Source Voltage | ±25 V | V |
| Maximum Operating Temperature | +150 °C | °C |
| Minimum Operating Temperature | -55 °C | °C |
| Typical Gate Charge @ Vgs | 42 nC @ -10 V | nC |
Key Features
- Very low RDS(on) mid voltage P-Channel silicon technology optimized for low Qg.
- Optimized for fast switching applications as well as load switch applications.
- 100% UIL tested.
- Pb-free, halogen-free, and RoHS compliant.
- Superior design reliability with reduced voltage spikes and overshoot, lower junction capacitance, and reverse recovery charge.
- Elimination of additional external components to keep systems up and running longer.
Applications
- Active Clamp Switch
- Load Switch
- Fast switching applications
- High-reliability systems requiring minimal external components
Q & A
- What is the maximum continuous drain current of the FDMS86163P MOSFET?
The maximum continuous drain current is 7.9 A.
- What is the maximum drain-source voltage of the FDMS86163P MOSFET?
The maximum drain-source voltage is 100 V.
- What package type does the FDMS86163P MOSFET use?
The package type is PQFN8.
- What is the typical gate charge at Vgs = -10 V for the FDMS86163P MOSFET?
The typical gate charge is 42 nC at Vgs = -10 V.
- Is the FDMS86163P MOSFET RoHS compliant?
- What are the operating temperature ranges for the FDMS86163P MOSFET?
The operating temperature range is from -55 °C to +150 °C.
- What is the maximum power dissipation of the FDMS86163P MOSFET?
The maximum power dissipation is 104 W.
- What are some typical applications for the FDMS86163P MOSFET?
Typical applications include active clamp switches, load switches, and fast switching applications.
- What is the minimum gate threshold voltage for the FDMS86163P MOSFET?
The minimum gate threshold voltage is -2 V.
- Does the FDMS86163P MOSFET require additional external components for operation?
No, the FDMS86163P MOSFET is designed to eliminate the need for additional external components.
