FDMS8333L
  • Share:

onsemi FDMS8333L

Manufacturer No:
FDMS8333L
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N CH 40V 22A POWER 56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMS8333L is an N-Channel MOSFET designed and manufactured by onsemi. This device is specifically engineered to enhance the overall efficiency and minimize switch node ringing in DC-DC converters. It is part of the PowerTrench MOSFET family, known for its high performance and reliability in power management applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)40 V
Continuous Drain Current (Id) at Ta22 A
Continuous Drain Current (Id) at Tc76 A
Power Dissipation (Pd) at Ta2.5 W
Power Dissipation (Pd) at Tc69 W
Package TypeSurface Mount 8-PQFN (5x6)
Maximum Drain Current (Idm)250 A

Key Features

  • High efficiency and low switch node ringing, making it ideal for DC-DC converters.
  • PowerTrench technology for improved performance and reliability.
  • High current handling capability with a maximum drain current of 250 A.
  • Compact surface mount 8-PQFN (5x6) package for space-efficient designs.

Applications

The FDMS8333L is suitable for a variety of power management applications, including:

  • DC-DC converters
  • Power supplies
  • Motor control systems
  • High-power switching circuits

Q & A

  1. What is the voltage rating of the FDMS8333L MOSFET?
    The voltage rating of the FDMS8333L MOSFET is 40 V.
  2. What is the continuous drain current at ambient temperature (Ta) for the FDMS8333L?
    The continuous drain current at ambient temperature (Ta) is 22 A.
  3. What is the continuous drain current at case temperature (Tc) for the FDMS8333L?
    The continuous drain current at case temperature (Tc) is 76 A.
  4. What is the maximum power dissipation at ambient temperature (Ta) for the FDMS8333L?
    The maximum power dissipation at ambient temperature (Ta) is 2.5 W.
  5. What is the maximum power dissipation at case temperature (Tc) for the FDMS8333L?
    The maximum power dissipation at case temperature (Tc) is 69 W.
  6. What package type does the FDMS8333L come in?
    The FDMS8333L comes in a surface mount 8-PQFN (5x6) package.
  7. What is the maximum drain current (Idm) for the FDMS8333L?
    The maximum drain current (Idm) for the FDMS8333L is 250 A.
  8. What technology is used in the FDMS8333L MOSFET?
    The FDMS8333L MOSFET uses PowerTrench technology.
  9. Where can the FDMS8333L be used?
    The FDMS8333L can be used in DC-DC converters, power supplies, motor control systems, and high-power switching circuits.
  10. Why is the FDMS8333L preferred in DC-DC converters?
    The FDMS8333L is preferred in DC-DC converters due to its high efficiency and ability to minimize switch node ringing.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:22A (Ta), 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.1mOhm @ 22A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:64 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4545 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 69W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$1.75
167

Please send RFQ , we will respond immediately.

Related Product By Categories

STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
IRFP4468PBF
IRFP4468PBF
Infineon Technologies
MOSFET N-CH 100V 195A TO247AC
STD2NK100Z
STD2NK100Z
STMicroelectronics
MOSFET N-CH 1000V 1.85A DPAK
BUK9M85-60EX
BUK9M85-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 12.8A LFPAK33
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
STF3NK100Z
STF3NK100Z
STMicroelectronics
MOSFET N-CH 1000V 2.5A TO220FP
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
NTMFS4C55NT1G
NTMFS4C55NT1G
onsemi
MOSFET N-CH 30V 78A SO8FL
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
STD7N52DK3
STD7N52DK3
STMicroelectronics
MOSFET N-CH 525V 6A DPAK
NTNS3A65PZT5GHW
NTNS3A65PZT5GHW
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

1N5333BRLG
1N5333BRLG
onsemi
DIODE ZENER 3.3V 5W AXIAL
DTC114TM3T5G
DTC114TM3T5G
onsemi
TRANS PREBIAS NPN 50V SOT723
2N7002KW
2N7002KW
onsemi
MOSFET N-CH 60V 310MA SC70
2N7002LT3
2N7002LT3
onsemi
MOSFET N-CH 60V 115MA SOT23-3
MC74AC14DTR2G
MC74AC14DTR2G
onsemi
IC INVERTER 6CH 1-INP 14TSSOP
NCP302045MNTWG
NCP302045MNTWG
onsemi
IC PWR DRIVER P-CHAN 2:1 31PQFN
NCP432BISNT1G
NCP432BISNT1G
onsemi
IC VREF SHUNT ADJ 0.5% SOT23-3
LM2931CTG
LM2931CTG
onsemi
IC REG LIN POS ADJ 100MA TO220-5
MC79L12ACPG
MC79L12ACPG
onsemi
IC REG LINEAR -12V 100MA TO92-3
MC79L15ABPG
MC79L15ABPG
onsemi
IC REG LINEAR -15V 100MA TO92-3
NCP584HSN33T1G
NCP584HSN33T1G
onsemi
IC REG LINEAR 3.3V 200MA SOT23-5
FODM217CR2V
FODM217CR2V
onsemi
OPTOCOUPLER PHOTOTRANS MFP4