Overview
The FDMS4D4N08C is an N-Channel MOSFET produced by onsemi, utilizing their advanced POWERTRENCH process with Shielded Gate technology. This device is designed to minimize on-state resistance while maintaining superior switching performance and a best-in-class soft body diode. It is packaged in a PQFN8 5x6 format, which is Pb-free and halogen-free, making it suitable for a variety of high-performance applications.
Key Specifications
| Parameter | Ratings | Unit |
|---|---|---|
| VDS (Drain to Source Voltage) | 80 | V |
| VGS (Gate to Source Voltage) | ±20 | V |
| ID (Drain Current - Continuous at TC = 25°C) | 123 | A |
| ID (Drain Current - Continuous at TC = 100°C) | 78 | A |
| rDS(on) (Static Drain to Source On Resistance at VGS = 10 V, ID = 44 A) | 4.3 | mΩ |
| rDS(on) (Static Drain to Source On Resistance at VGS = 6 V, ID = 22 A) | 10.4 | mΩ |
| TJ (Operating and Storage Junction Temperature Range) | -55 to +150 | °C |
| PD (Power Dissipation at TC = 25°C) | 125 | W |
| RθJC (Thermal Resistance, Junction to Case) | 1.0 | °C/W |
| RθJA (Thermal Resistance, Junction to Ambient) | 50 | °C/W |
Key Features
- Shielded Gate MOSFET Technology: Enhances performance by minimizing on-state resistance and improving switching characteristics.
- Low On-State Resistance: rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 44 A, and rDS(on) = 10.4 mΩ at VGS = 6 V, ID = 22 A.
- 50% Lower Qrr: Compared to other MOSFET suppliers, reducing switching noise and EMI.
- MSL1 Robust Package Design: Ensures reliability and durability.
- 100% UIL Tested: Ensures high-quality and reliable operation.
- RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
Applications
- Primary DC-DC MOSFET: Suitable for high-efficiency DC-DC converters.
- Synchronous Rectifier in DC-DC and AC-DC: Ideal for synchronous rectification in power supplies.
- Motor Drive: Used in motor control applications requiring high current and low on-state resistance.
- Solar Power: Applicable in solar power systems for efficient energy conversion.
Q & A
- What is the maximum drain to source voltage (VDS) of the FDMS4D4N08C?
The maximum drain to source voltage (VDS) is 80 V.
- What is the maximum continuous drain current (ID) at TC = 25°C?
The maximum continuous drain current (ID) at TC = 25°C is 123 A.
- What is the typical on-state resistance (rDS(on)) at VGS = 10 V and ID = 44 A?
The typical on-state resistance (rDS(on)) at VGS = 10 V and ID = 44 A is 4.3 mΩ.
- What is the thermal resistance from junction to case (RθJC)?
The thermal resistance from junction to case (RθJC) is 1.0 °C/W.
- Is the FDMS4D4N08C RoHS compliant?
Yes, the FDMS4D4N08C is RoHS compliant.
- What are the typical applications of the FDMS4D4N08C?
Typical applications include primary DC-DC MOSFET, synchronous rectifier in DC-DC and AC-DC, motor drive, and solar power systems.
- What is the package type of the FDMS4D4N08C?
The package type is PQFN8 5x6.
- What is the gate to source threshold voltage (VGS(th)) range?
The gate to source threshold voltage (VGS(th)) range is 2.0 to 4.0 V.
- How does the Shielded Gate technology benefit the MOSFET?
The Shielded Gate technology minimizes on-state resistance and improves switching performance.
- What is the reverse recovery charge (Qrr) characteristic of this MOSFET?
The FDMS4D4N08C has a 50% lower Qrr compared to other MOSFET suppliers, reducing switching noise and EMI.
