FDMC86520L
  • Share:

onsemi FDMC86520L

Manufacturer No:
FDMC86520L
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 13.5A/22A 8MLP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMC86520L is an N-Channel Power Trench® MOSFET designed and manufactured by onsemi. This component is specifically engineered to enhance the efficiency and minimize switch node ringing in DC/DC converters. It is part of onsemi's low to medium voltage MOSFET family, making it suitable for a variety of power management applications.

Key Specifications

ParameterValue
Channel TypeN-Channel
Maximum Drain-Source Voltage (Vds)60 V
Maximum Continuous Drain Current (Id)55 A
Package Type8-Pin MicroFET 2 x 2
Rds(on) (Typical)2.5 mΩ at Vgs = 10 V, Id = 30 A
Gate Threshold Voltage (Vth)2.0 - 4.0 V

Key Features

  • Low on-resistance (Rds(on)) of 2.5 mΩ at Vgs = 10 V, Id = 30 A, enhancing efficiency in power conversion applications.
  • Reduced switch node ringing, improving overall system reliability and performance.
  • Compact 8-Pin MicroFET 2 x 2 package, suitable for space-constrained designs.
  • High maximum continuous drain current of 55 A, making it suitable for high-power applications.

Applications

The FDMC86520L is ideal for various power management and conversion applications, including:

  • DC/DC converters
  • Power supplies
  • Motor control systems
  • High-power switching applications

Q & A

  1. What is the maximum drain-source voltage of the FDMC86520L?
    The maximum drain-source voltage (Vds) is 60 V.
  2. What is the maximum continuous drain current of the FDMC86520L?
    The maximum continuous drain current (Id) is 55 A.
  3. What is the typical on-resistance (Rds(on)) of the FDMC86520L?
    The typical on-resistance (Rds(on)) is 2.5 mΩ at Vgs = 10 V, Id = 30 A.
  4. What package type does the FDMC86520L come in?
    The FDMC86520L comes in an 8-Pin MicroFET 2 x 2 package.
  5. What is the gate threshold voltage range of the FDMC86520L?
    The gate threshold voltage (Vth) range is 2.0 - 4.0 V.
  6. What are the primary applications of the FDMC86520L?
    The primary applications include DC/DC converters, power supplies, motor control systems, and high-power switching applications.
  7. Why is the FDMC86520L designed to reduce switch node ringing?
    The FDMC86520L is designed to reduce switch node ringing to improve overall system reliability and performance.
  8. What are the benefits of the low on-resistance (Rds(on)) of the FDMC86520L?
    The low on-resistance enhances efficiency in power conversion applications.
  9. Is the FDMC86520L suitable for high-power applications?
    Yes, the FDMC86520L is suitable for high-power applications due to its high maximum continuous drain current.
  10. Where can I find detailed specifications for the FDMC86520L?
    Detailed specifications can be found on the official onsemi website, as well as on distributor sites like Mouser and Digi-Key.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:13.5A (Ta), 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:7.9mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:64 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4550 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):2.3W (Ta), 40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-MLP (3.3x3.3)
Package / Case:8-PowerWDFN
0 Remaining View Similar

In Stock

$2.50
192

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDMC86520L FDMC86570L
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 13.5A (Ta), 22A (Tc) 18A (Ta), 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.9mOhm @ 13.5A, 10V 4.3mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V 88 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4550 pF @ 30 V 6705 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 2.3W (Ta), 40W (Tc) 2.3W (Ta), 54W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-MLP (3.3x3.3) Power33
Package / Case 8-PowerWDFN 8-PowerWDFN

Related Product By Categories

STB36NM60ND
STB36NM60ND
STMicroelectronics
MOSFET N-CH 600V 29A D2PAK
STD80N10F7
STD80N10F7
STMicroelectronics
MOSFET N-CH 100V 70A DPAK
CSD17575Q3T
CSD17575Q3T
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
STD3N62K3
STD3N62K3
STMicroelectronics
MOSFET N-CH 620V 2.7A DPAK
BUK9M85-60EX
BUK9M85-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 12.8A LFPAK33
CSD18511Q5A
CSD18511Q5A
Texas Instruments
MOSFET N-CH 40V 159A 8VSON
NTMFS4C03NT1G
NTMFS4C03NT1G
onsemi
MOSFET N-CH 30V 30A/136A 5DFN
STP45N10F7
STP45N10F7
STMicroelectronics
MOSFET N-CH 100V 45A TO220
NTMFS5C612NLT1G
NTMFS5C612NLT1G
onsemi
MOSFET N-CH 60V 36A/235A 5DFN
STP80PF55
STP80PF55
STMicroelectronics
MOSFET P-CH 55V 80A TO220AB
FDMC8010ET30
FDMC8010ET30
onsemi
MOSFET N-CH 30V 30A/174A POWER33
MCH3375-TL-W-Z
MCH3375-TL-W-Z
onsemi
MOSFET P-CH 30V 1.6A SC-70FL

Related Product By Brand

SZESD7461N2T5G
SZESD7461N2T5G
onsemi
TVS DIODE 16VWM 39VC 2XDFN
1SMB5918BT3G
1SMB5918BT3G
onsemi
DIODE ZENER 5.1V 3W SMB
BC856BDW1T1G
BC856BDW1T1G
onsemi
TRANS 2PNP 65V 0.1A SC88/SC70-6
2SA2222SG
2SA2222SG
onsemi
TRANS PNP 50V 10A TO220ML
SMMUN2216LT1G
SMMUN2216LT1G
onsemi
TRANS PREBIAS NPN 50V SOT23-3
J113-D74Z
J113-D74Z
onsemi
JFET N-CH 35V 625MW TO92
CAT24C16YI-GT3JN
CAT24C16YI-GT3JN
onsemi
IC EEPROM 16KBIT I2C 8TSSOP
NCP1076BBP100G
NCP1076BBP100G
onsemi
IC OFFLINE SWITCH FLYBACK 8DIP
LB11861MC-AH
LB11861MC-AH
onsemi
IC MOTOR DRIVER 4.5V-16V 10MFPSK
CAT1021WI30
CAT1021WI30
onsemi
CAT1021 - SUPERVISORY CIRCUIT WI
NCP160AMX330TBG
NCP160AMX330TBG
onsemi
IC REG LINEAR 3.3V 250MA 4XDFN
FOD817B3SD
FOD817B3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD