FDMC86520L
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onsemi FDMC86520L

Manufacturer No:
FDMC86520L
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 13.5A/22A 8MLP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMC86520L is an N-Channel Power Trench® MOSFET designed and manufactured by onsemi. This component is specifically engineered to enhance the efficiency and minimize switch node ringing in DC/DC converters. It is part of onsemi's low to medium voltage MOSFET family, making it suitable for a variety of power management applications.

Key Specifications

ParameterValue
Channel TypeN-Channel
Maximum Drain-Source Voltage (Vds)60 V
Maximum Continuous Drain Current (Id)55 A
Package Type8-Pin MicroFET 2 x 2
Rds(on) (Typical)2.5 mΩ at Vgs = 10 V, Id = 30 A
Gate Threshold Voltage (Vth)2.0 - 4.0 V

Key Features

  • Low on-resistance (Rds(on)) of 2.5 mΩ at Vgs = 10 V, Id = 30 A, enhancing efficiency in power conversion applications.
  • Reduced switch node ringing, improving overall system reliability and performance.
  • Compact 8-Pin MicroFET 2 x 2 package, suitable for space-constrained designs.
  • High maximum continuous drain current of 55 A, making it suitable for high-power applications.

Applications

The FDMC86520L is ideal for various power management and conversion applications, including:

  • DC/DC converters
  • Power supplies
  • Motor control systems
  • High-power switching applications

Q & A

  1. What is the maximum drain-source voltage of the FDMC86520L?
    The maximum drain-source voltage (Vds) is 60 V.
  2. What is the maximum continuous drain current of the FDMC86520L?
    The maximum continuous drain current (Id) is 55 A.
  3. What is the typical on-resistance (Rds(on)) of the FDMC86520L?
    The typical on-resistance (Rds(on)) is 2.5 mΩ at Vgs = 10 V, Id = 30 A.
  4. What package type does the FDMC86520L come in?
    The FDMC86520L comes in an 8-Pin MicroFET 2 x 2 package.
  5. What is the gate threshold voltage range of the FDMC86520L?
    The gate threshold voltage (Vth) range is 2.0 - 4.0 V.
  6. What are the primary applications of the FDMC86520L?
    The primary applications include DC/DC converters, power supplies, motor control systems, and high-power switching applications.
  7. Why is the FDMC86520L designed to reduce switch node ringing?
    The FDMC86520L is designed to reduce switch node ringing to improve overall system reliability and performance.
  8. What are the benefits of the low on-resistance (Rds(on)) of the FDMC86520L?
    The low on-resistance enhances efficiency in power conversion applications.
  9. Is the FDMC86520L suitable for high-power applications?
    Yes, the FDMC86520L is suitable for high-power applications due to its high maximum continuous drain current.
  10. Where can I find detailed specifications for the FDMC86520L?
    Detailed specifications can be found on the official onsemi website, as well as on distributor sites like Mouser and Digi-Key.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:13.5A (Ta), 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:7.9mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:64 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4550 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):2.3W (Ta), 40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-MLP (3.3x3.3)
Package / Case:8-PowerWDFN
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Similar Products

Part Number FDMC86520L FDMC86570L
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 13.5A (Ta), 22A (Tc) 18A (Ta), 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.9mOhm @ 13.5A, 10V 4.3mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V 88 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4550 pF @ 30 V 6705 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 2.3W (Ta), 40W (Tc) 2.3W (Ta), 54W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-MLP (3.3x3.3) Power33
Package / Case 8-PowerWDFN 8-PowerWDFN

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