FDMC86570L
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onsemi FDMC86570L

Manufacturer No:
FDMC86570L
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 18A/56A POWER33
Delivery:
Payment:
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Product Introduction

Overview

The FDMC86570L is an N-Channel Shielded Gate PowerTrench® MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling. Although it is currently listed as obsolete and not in production, it remains a significant component in existing designs and legacy systems.

Key Specifications

Parameter Value Unit
Vds (Drain-Source Voltage) 60 V
Id (Continuous Drain Current) 53 A
Idm (Pulsed Drain Current) 416 A
Rds(on) (On-Resistance) 1.5 mΩ (typical at Vgs = 10V)
Vgs(th) (Threshold Voltage) 2-4 V
Qgs (Gate to Source Charge) 14 nC
Qgd (Gate to Drain “Miller” Charge) 6.3 nC

Key Features

  • Low On-Resistance: The FDMC86570L features a low on-resistance of 1.5 mΩ (typical at Vgs = 10V), making it suitable for high-efficiency applications.
  • High Current Handling: With a continuous drain current of 53A and a pulsed drain current of 416A, this MOSFET is capable of handling high current requirements.
  • Shielded Gate Technology: The PowerTrench® technology provides improved performance and reliability by reducing gate charge and increasing switching speed.
  • Standard 40V Gate Level: This MOSFET operates with a standard 40V gate level, making it compatible with a wide range of control circuits.

Applications

  • Motor Drivers: The FDMC86570L is particularly suited for motor driver applications due to its low on-resistance and high current handling capabilities.
  • Power Supplies: It can be used in power supply designs where high efficiency and reliability are crucial.
  • Industrial Control Systems: This MOSFET is also applicable in industrial control systems that require robust and efficient power management.

Q & A

  1. What is the maximum drain-source voltage of the FDMC86570L?

    The maximum drain-source voltage (Vds) is 60V.

  2. What is the continuous drain current of the FDMC86570L?

    The continuous drain current (Id) is 53A.

  3. What is the typical on-resistance of the FDMC86570L?

    The typical on-resistance (Rds(on)) is 1.5 mΩ at Vgs = 10V.

  4. What technology is used in the FDMC86570L?

    The FDMC86570L uses PowerTrench® shielded gate technology.

  5. Is the FDMC86570L still in production?

    No, the FDMC86570L is listed as obsolete and not in production.

  6. What are some common applications for the FDMC86570L?

    Common applications include motor drivers, power supplies, and industrial control systems.

  7. What is the gate to source charge (Qgs) of the FDMC86570L?

    The gate to source charge (Qgs) is 14 nC.

  8. What is the gate to drain “Miller” charge (Qgd) of the FDMC86570L?

    The gate to drain “Miller” charge (Qgd) is 6.3 nC.

  9. What is the threshold voltage (Vgs(th)) of the FDMC86570L?

    The threshold voltage (Vgs(th)) is between 2-4 V.

  10. Where can I find detailed specifications for the FDMC86570L?

    Detailed specifications can be found in the datasheet available on onsemi's official website and other electronic component distributors like Mouser and TME.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:18A (Ta), 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.3mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:88 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6705 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):2.3W (Ta), 54W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Power33
Package / Case:8-PowerWDFN
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Similar Products

Part Number FDMC86570L FDMC86520L
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 18A (Ta), 56A (Tc) 13.5A (Ta), 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.3mOhm @ 18A, 10V 7.9mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 88 nC @ 10 V 64 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6705 pF @ 30 V 4550 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 2.3W (Ta), 54W (Tc) 2.3W (Ta), 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package Power33 8-MLP (3.3x3.3)
Package / Case 8-PowerWDFN 8-PowerWDFN

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