Overview
The FDMC86244-L701 is a high-performance N-Channel MOSFET produced by ON Semiconductor, utilizing their advanced POWERTRENCH process with Shielded Gate technology. This device is optimized for low on-state resistance and superior switching performance, making it suitable for a variety of power management applications. The MOSFET is packaged in a compact 8-WDFN (3.3x3.3 mm, 0.65P) package, which reduces board space requirements while maintaining high power handling capabilities.
Key Specifications
| Parameter | Unit | Min | Max | |
|---|---|---|---|---|
| VDS (Drain to Source Voltage) | V | - | - | 150 |
| VGS (Gate to Source Voltage) | V | - | - | ±20 |
| ID (Continuous Drain Current at TC = 25°C) | A | - | - | 9.4 |
| ID (Continuous Drain Current at TA = 25°C) | A | - | - | 2.8 |
| PD (Power Dissipation at TC = 25°C) | W | - | - | 26 |
| TJ (Operating and Storage Junction Temperature Range) | °C | -55 | - | 150 |
| rDS(on) at VGS = 10 V, ID = 2.8 A | mΩ | - | 105 | 134 |
| rDS(on) at VGS = 6 V, ID = 2.4 A | mΩ | - | 120 | 186 |
| RθJC (Thermal Resistance, Junction to Case) | °C/W | - | - | 4.7 |
| RθJA (Thermal Resistance, Junction to Ambient) | °C/W | - | - | 125 |
Key Features
- Advanced POWERTRENCH process with Shielded Gate technology for low on-state resistance and superior switching performance.
- Compact 8-WDFN (3.3x3.3 mm, 0.65P) package, reducing board space requirements.
- Low profile design with a maximum height of 1 mm.
- 100% UIL tested for reliability.
- Pb-free and RoHS compliant.
Applications
- DC-DC conversion.
- Power management in various electronic systems.
- High-efficiency switching applications.
Q & A
- What is the maximum drain to source voltage (VDS) of the FDMC86244-L701 MOSFET?
The maximum drain to source voltage (VDS) is 150 V.
- What is the continuous drain current (ID) at TC = 25°C?
The continuous drain current (ID) at TC = 25°C is 9.4 A.
- What is the thermal resistance from junction to case (RθJC) of the FDMC86244-L701?
The thermal resistance from junction to case (RθJC) is 4.7 °C/W.
- Is the FDMC86244-L701 Pb-free and RoHS compliant?
- What is the typical on-state resistance (rDS(on)) at VGS = 10 V and ID = 2.8 A?
The typical on-state resistance (rDS(on)) at VGS = 10 V and ID = 2.8 A is 105 mΩ, with a maximum of 134 mΩ.
- What are the dimensions of the 8-WDFN package?
The 8-WDFN package dimensions are 3.3x3.3 mm with a height of 0.65P.
- What is the gate to source threshold voltage (VGS(th)) range?
The gate to source threshold voltage (VGS(th)) range is from 2 V to 4 V.
- What is the maximum power dissipation (PD) at TC = 25°C?
The maximum power dissipation (PD) at TC = 25°C is 26 W.
- What are the typical switching times for turn-on and turn-off?
The typical turn-on delay time (td(on)) is 5.3 ns, and the typical turn-off delay time (td(off)) is 9.9 ns.
- What is the operating and storage junction temperature range?
The operating and storage junction temperature range is from -55°C to 150°C.
