FDMC86160
  • Share:

onsemi FDMC86160

Manufacturer No:
FDMC86160
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N CH 100V 9A POWER33
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMC86160 is an N-Channel MOSFET produced by onsemi, utilizing their advanced PowerTrench process. This technology incorporates Shielded Gate architecture, which is optimized to minimize on-state resistance and enhance overall performance. The MOSFET is designed for low to medium voltage applications, making it a versatile component for various power management and switching tasks.

Key Specifications

ParameterValue
Drain-Source Voltage (Vds)100 V
Continuous Drain Current (Id)43 A
Pulse Drain Current (Idm)50 A
On-State Resistance (Rds(on))Optimized for low resistance
Power Dissipation (Pd)54 W
PackagePower33

Key Features

  • Advanced PowerTrench process with Shielded Gate technology to reduce on-state resistance and improve switching performance.
  • Low to medium voltage operation, suitable for a wide range of applications.
  • High continuous and pulse drain current capabilities.
  • High power dissipation rating.
  • Compact Power33 package for efficient space utilization.

Applications

The FDMC86160 is suitable for various applications including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems, such as battery management and power steering.
  • Industrial control and automation.
  • Consumer electronics requiring efficient power management.

Q & A

  1. What is the maximum drain-source voltage of the FDMC86160?
    The maximum drain-source voltage (Vds) is 100 V.
  2. What is the continuous drain current rating of the FDMC86160?
    The continuous drain current (Id) is 43 A.
  3. What is the pulse drain current rating of the FDMC86160?
    The pulse drain current (Idm) is 50 A.
  4. What technology is used in the FDMC86160?
    The FDMC86160 uses onsemi's advanced PowerTrench process with Shielded Gate technology.
  5. What is the power dissipation rating of the FDMC86160?
    The power dissipation rating (Pd) is 54 W.
  6. In what package is the FDMC86160 available?
    The FDMC86160 is available in the Power33 package.
  7. What are some typical applications of the FDMC86160?
    Typical applications include power supplies, motor control, automotive systems, industrial control, and consumer electronics.
  8. Why is the Shielded Gate technology important in the FDMC86160?
    The Shielded Gate technology helps in reducing on-state resistance and improving switching performance.
  9. Is the FDMC86160 suitable for high-power applications?
    Yes, the FDMC86160 is suitable for high-power applications due to its high current and power dissipation ratings.
  10. Where can I find detailed specifications for the FDMC86160?
    Detailed specifications can be found in the datasheet available on onsemi's official website and other electronic component distributors like TME.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:9A (Ta), 43A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:14mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1290 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):2.3W (Ta), 54W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Power33
Package / Case:8-PowerWDFN
0 Remaining View Similar

In Stock

$2.55
88

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDMC86160 FDMC86260
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 150 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 43A (Tc) 5.4A (Ta), 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 9A, 10V 34mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V 21 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1290 pF @ 50 V 1330 pF @ 75 V
FET Feature - -
Power Dissipation (Max) 2.3W (Ta), 54W (Tc) 2.3W (Ta), 54W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package Power33 Power33
Package / Case 8-PowerWDFN 8-PowerWDFN

Related Product By Categories

FQD4P25TM-WS
FQD4P25TM-WS
onsemi
MOSFET P-CH 250V 3.1A DPAK
STD80N10F7
STD80N10F7
STMicroelectronics
MOSFET N-CH 100V 70A DPAK
NTS4173PT1G
NTS4173PT1G
onsemi
MOSFET P-CH 30V 1.2A SC70-3
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
BUK7Y4R4-40EX
BUK7Y4R4-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
STP3NK80Z
STP3NK80Z
STMicroelectronics
MOSFET N-CH 800V 2.5A TO220AB
STB80NF55-06T4
STB80NF55-06T4
STMicroelectronics
MOSFET N-CH 55V 80A D2PAK
STP22NM60N
STP22NM60N
STMicroelectronics
MOSFET N-CH 600V 16A TO220AB
NTHL050N65S3HF
NTHL050N65S3HF
onsemi
MOSFET N-CH 650V 58A TO247-3
STL10N65M2
STL10N65M2
STMicroelectronics
MOSFET N-CH 650V 4.5A POWERFLAT
FQB34P10TM-F085
FQB34P10TM-F085
onsemi
MOSFET P-CH 100V 33.5A D2PAK
BSS138-F169
BSS138-F169
onsemi
MOSFET N-CH SOT23

Related Product By Brand

1SMB5918BT3G
1SMB5918BT3G
onsemi
DIODE ZENER 5.1V 3W SMB
MJD3055T4G
MJD3055T4G
onsemi
TRANS NPN 60V 10A DPAK
BD677AG
BD677AG
onsemi
TRANS NPN DARL 60V 4A TO126
FDG6306P
FDG6306P
onsemi
MOSFET 2P-CH 20V 600MA SC88
NTUD3127CT5G
NTUD3127CT5G
onsemi
MOSFET N/P-CH 20V SOT-963
FDD2572-F085
FDD2572-F085
onsemi
MOSFET N-CH 150V 4A/29A TO252AA
FDS4465-G
FDS4465-G
onsemi
MOSFET P-CH 20V 8SOIC
NS5B1G385DTT1G
NS5B1G385DTT1G
onsemi
IC ANLG SWITCH SPST NO 5TSOP
MC14528BDR2G
MC14528BDR2G
onsemi
IC MULTIVIBRATOR 90NS 16SOIC
NSV45035JZT1G
NSV45035JZT1G
onsemi
IC REG CCR 45V 35MA SOT223
TLV431ALPG
TLV431ALPG
onsemi
IC VREF SHUNT ADJ 1% TO92-3
FODM217CR2V
FODM217CR2V
onsemi
OPTOCOUPLER PHOTOTRANS MFP4