FDMC86160
  • Share:

onsemi FDMC86160

Manufacturer No:
FDMC86160
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N CH 100V 9A POWER33
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMC86160 is an N-Channel MOSFET produced by onsemi, utilizing their advanced PowerTrench process. This technology incorporates Shielded Gate architecture, which is optimized to minimize on-state resistance and enhance overall performance. The MOSFET is designed for low to medium voltage applications, making it a versatile component for various power management and switching tasks.

Key Specifications

ParameterValue
Drain-Source Voltage (Vds)100 V
Continuous Drain Current (Id)43 A
Pulse Drain Current (Idm)50 A
On-State Resistance (Rds(on))Optimized for low resistance
Power Dissipation (Pd)54 W
PackagePower33

Key Features

  • Advanced PowerTrench process with Shielded Gate technology to reduce on-state resistance and improve switching performance.
  • Low to medium voltage operation, suitable for a wide range of applications.
  • High continuous and pulse drain current capabilities.
  • High power dissipation rating.
  • Compact Power33 package for efficient space utilization.

Applications

The FDMC86160 is suitable for various applications including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems, such as battery management and power steering.
  • Industrial control and automation.
  • Consumer electronics requiring efficient power management.

Q & A

  1. What is the maximum drain-source voltage of the FDMC86160?
    The maximum drain-source voltage (Vds) is 100 V.
  2. What is the continuous drain current rating of the FDMC86160?
    The continuous drain current (Id) is 43 A.
  3. What is the pulse drain current rating of the FDMC86160?
    The pulse drain current (Idm) is 50 A.
  4. What technology is used in the FDMC86160?
    The FDMC86160 uses onsemi's advanced PowerTrench process with Shielded Gate technology.
  5. What is the power dissipation rating of the FDMC86160?
    The power dissipation rating (Pd) is 54 W.
  6. In what package is the FDMC86160 available?
    The FDMC86160 is available in the Power33 package.
  7. What are some typical applications of the FDMC86160?
    Typical applications include power supplies, motor control, automotive systems, industrial control, and consumer electronics.
  8. Why is the Shielded Gate technology important in the FDMC86160?
    The Shielded Gate technology helps in reducing on-state resistance and improving switching performance.
  9. Is the FDMC86160 suitable for high-power applications?
    Yes, the FDMC86160 is suitable for high-power applications due to its high current and power dissipation ratings.
  10. Where can I find detailed specifications for the FDMC86160?
    Detailed specifications can be found in the datasheet available on onsemi's official website and other electronic component distributors like TME.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:9A (Ta), 43A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:14mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1290 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):2.3W (Ta), 54W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Power33
Package / Case:8-PowerWDFN
0 Remaining View Similar

In Stock

$2.55
88

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDMC86160 FDMC86260
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 150 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 43A (Tc) 5.4A (Ta), 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 9A, 10V 34mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V 21 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1290 pF @ 50 V 1330 pF @ 75 V
FET Feature - -
Power Dissipation (Max) 2.3W (Ta), 54W (Tc) 2.3W (Ta), 54W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package Power33 Power33
Package / Case 8-PowerWDFN 8-PowerWDFN

Related Product By Categories

PHD71NQ03LT,118
PHD71NQ03LT,118
NXP USA Inc.
TRANSISTOR >30MHZ
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
PSMN2R0-30YLE,115
PSMN2R0-30YLE,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
FDD86567-F085
FDD86567-F085
onsemi
MOSFET N-CH 60V 100A DPAK
NTMFS5C468NLT1G
NTMFS5C468NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STF5N95K5
STF5N95K5
STMicroelectronics
MOSFET N-CH 950V 3.5A TO220FP
STB33N60M2
STB33N60M2
STMicroelectronics
MOSFET N-CH 600V 26A D2PAK
STP24NM60N
STP24NM60N
STMicroelectronics
MOSFET N-CH 600V 17A TO220
BSS138K
BSS138K
onsemi
MOSFET N-CH 50V 220MA SOT23-3
IRFP4668PBF
IRFP4668PBF
Infineon Technologies
MOSFET N-CH 200V 130A TO247AC
STL10N65M2
STL10N65M2
STMicroelectronics
MOSFET N-CH 650V 4.5A POWERFLAT
BSS138-F169
BSS138-F169
onsemi
MOSFET N-CH SOT23

Related Product By Brand

MURF860G
MURF860G
onsemi
DIODE GEN PURP 600V 8A TO220FP
2N6284G
2N6284G
onsemi
TRANS NPN DARL 100V 20A TO204
SBC856ALT1G
SBC856ALT1G
onsemi
TRANS PNP 65V 0.1A SOT23-3
FDG6306P
FDG6306P
onsemi
MOSFET 2P-CH 20V 600MA SC88
FDMT800100DC
FDMT800100DC
onsemi
MOSFET N-CH 100V 24A/162A 8DUAL
NTB6413ANG
NTB6413ANG
onsemi
MOSFET N-CH 100V 42A D2PAK
MC74HC245ADWR2
MC74HC245ADWR2
onsemi
IC BUS TRANSCVR 3-ST 8B 20SOIC
MC74VHC1GT08EDFT2G
MC74VHC1GT08EDFT2G
onsemi
IC GATE AND 1CH 2-INP SC88A
CAT24C512C8UTR
CAT24C512C8UTR
onsemi
IC EEPROM 512KBIT I2C 8WLCSP
UC3843AD1G
UC3843AD1G
onsemi
UC3843 CURRENT-MODE PWM CONTROLL
NCV551SN50T1G
NCV551SN50T1G
onsemi
IC REG LINEAR 5V 150MA 5TSOP
MC79L12ACPG
MC79L12ACPG
onsemi
IC REG LINEAR -12V 100MA TO92-3