Overview
The FDMC86116LZ is an N-Channel logic level MOSFET produced by onsemi, utilizing their advanced POWERTRENCH process. This technology is optimized to minimize on-state resistance while maintaining superior switching performance. The device incorporates Shielded Gate technology and includes a G-S Zener diode to enhance ESD voltage protection. It is designed to be Pb-free and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
Key Specifications
| Parameter | Symbol | Unit | Rating |
|---|---|---|---|
| Drain to Source Voltage | VDS | V | 100 |
| Gate to Source Voltage | VGS | V | ±20 |
| Continuous Drain Current at TC = 25°C | ID | A | 7.5 |
| Pulsed Drain Current | ID | A | 15 |
| Single Pulse Avalanche Energy | EAS | mJ | 12 |
| Power Dissipation at TC = 25°C | PD | W | 19 |
| Operating and Storage Junction Temperature Range | TJ, TSTG | °C | −55 to +150 |
| Thermal Resistance, Junction to Case | RθJC | °C/W | 6.5 |
| Thermal Resistance, Junction to Ambient | RθJA | °C/W | 53 |
| Static Drain to Source On Resistance at VGS = 10 V, ID = 3.3 A | RDS(on) | mΩ | 103 |
| Static Drain to Source On Resistance at VGS = 4.5 V, ID = 2.7 A | RDS(on) | mΩ | 153 |
Key Features
- Advanced POWERTRENCH process for minimized on-state resistance and superior switching performance.
- Shielded Gate technology for enhanced performance.
- G-S Zener diode for improved ESD voltage protection.
- Maximum RDS(on) of 103 mΩ at VGS = 10 V, ID = 3.3 A and 153 mΩ at VGS = 4.5 V, ID = 2.7 A.
- HBM ESD protection level > 3 kV typical.
- 100% UIL tested.
- Pb-free and RoHS compliant.
Applications
The FDMC86116LZ is suitable for various applications, including:
- DC-DC conversion.
- Consumer electronics.
- Automotive systems.
- Industrial power management.
Q & A
- What is the maximum drain to source voltage of the FDMC86116LZ?
The maximum drain to source voltage (VDS) is 100 V.
- What is the continuous drain current rating at TC = 25°C?
The continuous drain current (ID) at TC = 25°C is 7.5 A.
- What is the thermal resistance from junction to case?
The thermal resistance from junction to case (RθJC) is 6.5 °C/W.
- Is the FDMC86116LZ RoHS compliant?
- What is the typical HBM ESD protection level?
The typical HBM ESD protection level is > 3 kV.
- What is the maximum RDS(on) at VGS = 10 V and ID = 3.3 A?
The maximum RDS(on) at VGS = 10 V and ID = 3.3 A is 103 mΩ.
- What are the common applications of the FDMC86116LZ?
- What technology is used in the production of the FDMC86116LZ?
The FDMC86116LZ is produced using onsemi's advanced POWERTRENCH process with Shielded Gate technology.
- What is the package type of the FDMC86116LZ?
The package type is WDFN8 3.3x3.3, 0.65P.
- What is the operating and storage junction temperature range?
The operating and storage junction temperature range is −55 to +150 °C.
