Overview
The FDMC86102LZ is an N-Channel MOSFET produced by onsemi, utilizing their advanced PowerTrench® process with Shielded Gate technology. This technology optimizes the on-state resistance while maintaining superior switching performance. The MOSFET is designed for general usage and is suitable for a wide range of applications. It features a low profile and is 100% UIL tested, ensuring reliability and compliance with RoHS standards.
Key Specifications
| Parameter | Symbol | Unit | Min | Max | |
|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDS | V | - | - | 100 |
| Gate-to-Source Voltage | VGS | V | - | - | ±20 |
| Continuous Drain Current at TC = 25°C | ID | A | - | - | 22 |
| Continuous Drain Current at TA = 25°C | ID | A | - | - | 7 |
| Pulsed Drain Current | ID | A | - | - | 30 |
| Power Dissipation at TC = 25°C | PD | W | - | - | 41 |
| Power Dissipation at TA = 25°C | PD | W | - | - | 2.3 |
| Operating and Storage Junction Temperature Range | TJ, TSTG | °C | -55 | - | 150 |
| Static Drain-to-Source On Resistance at VGS = 10 V, ID = 6.5 A | RDS(on) | mΩ | - | 19 | 24 |
| Static Drain-to-Source On Resistance at VGS = 4.5 V, ID = 5.5 A | RDS(on) | mΩ | - | 25 | 35 |
| Gate-to-Source Threshold Voltage | VGS(th) | V | 1.0 | 1.6 | 2.2 |
| Input Capacitance | Ciss | pF | - | 969 | 1290 |
| Output Capacitance | Coss | pF | - | 181 | 240 |
| Reverse Transfer Capacitance | Crss | pF | - | 9 | 15 |
Key Features
- Shielded Gate MOSFET Technology: Enhances performance and reliability.
- Low On-State Resistance: RDS(on) = 24 mΩ at VGS = 10 V, ID = 6.5 A and RDS(on) = 35 mΩ at VGS = 4.5 V, ID = 5.5 A.
- HBM ESD Protection Level: > 6 kV typical.
- 100% UIL Tested: Ensures reliability and robustness.
- RoHS Compliant: Environmentally friendly.
- Low Profile: 1 mm max in Power 33 package.
Applications
- DC-DC Switching: Suitable for various DC-DC converter applications due to its low on-state resistance and superior switching performance.
- General Power Management: Can be used in a wide range of power management circuits requiring high efficiency and reliability.
Q & A
- What is the maximum drain-to-source voltage of the FDMC86102LZ?
The maximum drain-to-source voltage (VDS) is 100 V.
- What is the continuous drain current at TC = 25°C?
The continuous drain current at TC = 25°C is 22 A.
- What is the on-state resistance at VGS = 10 V and ID = 6.5 A?
The on-state resistance (RDS(on)) is 24 mΩ at VGS = 10 V and ID = 6.5 A.
- Is the FDMC86102LZ RoHS compliant?
Yes, the FDMC86102LZ is RoHS compliant.
- What is the operating and storage junction temperature range?
The operating and storage junction temperature range is -55°C to +150°C.
- What is the typical HBM ESD protection level?
The typical HBM ESD protection level is > 6 kV.
- What is the package type of the FDMC86102LZ?
The package type is WDFN8 (Pb-Free, Halide Free).
- What are the key applications of the FDMC86102LZ?
The key applications include DC-DC switching and general power management.
- What is the thermal resistance from junction to case (RJC)?
The thermal resistance from junction to case (RJC) is 3°C/W.
- What is the input capacitance (Ciss) of the FDMC86102LZ?
The input capacitance (Ciss) is typically 969 pF.
