FDMC86102LZ
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onsemi FDMC86102LZ

Manufacturer No:
FDMC86102LZ
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 7A/18A 8MLP
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The FDMC86102LZ is an N-Channel logic level MOSFET produced by onsemi, utilizing the advanced PowerTrench® process with Shielded Gate technology. This MOSFET is designed to offer high performance and reliability in various power management applications. It is characterized by its low on-resistance and high current handling capabilities, making it suitable for a range of electronic systems.

Key Specifications

ParameterValue
Drain to Source Voltage (Vdss)100 V
Continuous Drain Current (Id)22 A
On-Resistance (Rds(on))24 mΩ (typical at Vgs = 10 V)
Gate Threshold Voltage (Vth)2.0 - 4.0 V
Operating Junction Temperature (Tj)-55 to 150 °C
PolarityN-Channel
Package TypePower33-8

Key Features

  • Advanced PowerTrench® process with Shielded Gate technology for improved performance and reliability.
  • Low on-resistance (Rds(on)) of 24 mΩ (typical at Vgs = 10 V) for efficient power handling.
  • High continuous drain current (Id) of 22 A.
  • Wide operating junction temperature range (-55 to 150 °C).
  • Logic level gate drive for ease of use in digital systems.

Applications

The FDMC86102LZ MOSFET is suitable for various power management and control applications, including but not limited to:

  • DC-DC converters and power supplies.
  • Motor control and drive systems.
  • Power amplifiers and audio systems.
  • Industrial control and automation systems.
  • Consumer electronics and appliances.

Q & A

  1. What is the maximum drain to source voltage of the FDMC86102LZ MOSFET?
    The maximum drain to source voltage (Vdss) is 100 V.
  2. What is the continuous drain current rating of the FDMC86102LZ?
    The continuous drain current (Id) is 22 A.
  3. What is the typical on-resistance of the FDMC86102LZ?
    The typical on-resistance (Rds(on)) is 24 mΩ at Vgs = 10 V.
  4. What is the operating junction temperature range of the FDMC86102LZ?
    The operating junction temperature range is -55 to 150 °C.
  5. What type of gate drive does the FDMC86102LZ require?
    The FDMC86102LZ requires a logic level gate drive.
  6. What is the package type of the FDMC86102LZ?
    The package type is Power33-8.
  7. What technology is used in the FDMC86102LZ MOSFET?
    The FDMC86102LZ uses the PowerTrench® process with Shielded Gate technology.
  8. What are some common applications of the FDMC86102LZ?
    Common applications include DC-DC converters, motor control systems, power amplifiers, industrial control systems, and consumer electronics.
  9. Is the FDMC86102LZ suitable for high-power applications?
    Yes, the FDMC86102LZ is designed for high-power applications due to its high current and low on-resistance characteristics.
  10. Where can I find detailed specifications for the FDMC86102LZ?
    Detailed specifications can be found on the onsemi website, Digi-Key, and other electronic component distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:7A (Ta), 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:24mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1290 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):2.3W (Ta), 41W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-MLP (3.3x3.3)
Package / Case:8-PowerWDFN
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Similar Products

Part Number FDMC86102LZ FDMC86106LZ FDMC86102L
Manufacturer onsemi Fairchild Semiconductor onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 7A (Ta), 18A (Tc) 3.3A (Ta), 7.5A (Tc) 7A (Ta), 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V - 4.5V, 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 6.5A, 10V 103mOhm @ 3.3A, 10V 23mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.2V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V 6 nC @ 10 V 22 nC @ 10 V
Vgs (Max) ±20V - ±20V
Input Capacitance (Ciss) (Max) @ Vds 1290 pF @ 50 V 310 pF @ 50 V 1330 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 2.3W (Ta), 41W (Tc) 2.3W (Ta), 19W (Tc) 2.3W (Ta), 41W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-MLP (3.3x3.3) 8-MLP (3.3x3.3) 8-MLP (3.3x3.3)
Package / Case 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN

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