FDMC8010DC
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onsemi FDMC8010DC

Manufacturer No:
FDMC8010DC
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 37A 8PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMC8010DC is an N-Channel MOSFET produced by onsemi, utilizing their advanced POWERTRENCH process and DUAL COOL package technology. This device is designed to offer the lowest on-state resistance (rDS(on)) while maintaining excellent switching performance and low junction-to-ambient thermal resistance. It is part of onsemi's lineup of high-performance MOSFETs, tailored for applications requiring high current handling and efficient thermal management.

Key Specifications

Parameter Symbol Min
Drain to Source Voltage VDS - - 30 V
Gate to Source Voltage VGS - - ±20 V
Continuous Drain Current (TC = 25°C) ID - - 157 A
Continuous Drain Current (TC = 100°C) ID - - 99 A
Pulsed Drain Current ID - - 788 A
Power Dissipation (TC = 25°C) PD - - 50 W
Operating and Storage Junction Temperature Range TJ, TSTG -55 - 150 °C
Static Drain to Source On Resistance (VGS = 10 V, ID = 37 A) rDS(on) 0.91 1.28 -
Static Drain to Source On Resistance (VGS = 4.5 V, ID = 32 A) rDS(on) 1.2 1.74 -
Thermal Resistance, Junction to Ambient RθJA - - 42 °C/W

Key Features

  • DUAL COOL Top Side Cooling PQFN Package, enhancing thermal performance.
  • Low on-state resistance (rDS(on)) of 1.28 mΩ at VGS = 10 V, ID = 37 A, and 1.74 mΩ at VGS = 4.5 V, ID = 32 A.
  • High performance technology for extremely low rDS(on) and excellent switching characteristics.
  • Pb-free and RoHS compliant, ensuring environmental sustainability.
  • Low thermal resistance, with RθJC of 2.5 °C/W and RθJA of 42 °C/W under specified conditions.

Applications

  • Load Switch
  • Motor Bridge Switch
  • Synchronous Rectifier
  • Other high-current switching applications requiring efficient thermal management.

Q & A

  1. What is the maximum drain to source voltage for the FDMC8010DC?

    The maximum drain to source voltage (VDS) is 30 V.

  2. What is the typical on-state resistance (rDS(on)) at VGS = 10 V and ID = 37 A?

    The typical on-state resistance (rDS(on)) is 1.28 mΩ.

  3. What is the continuous drain current rating at TC = 25°C?

    The continuous drain current rating at TC = 25°C is 157 A.

  4. What is the thermal resistance from junction to ambient (RθJA) under standard conditions?

    The thermal resistance from junction to ambient (RθJA) is 42 °C/W.

  5. Is the FDMC8010DC Pb-free and RoHS compliant?

    Yes, the FDMC8010DC is Pb-free and RoHS compliant.

  6. What are some common applications for the FDMC8010DC?

    Common applications include load switches, motor bridge switches, and synchronous rectifiers.

  7. What is the operating and storage junction temperature range for the FDMC8010DC?

    The operating and storage junction temperature range is -55°C to +150°C.

  8. What is the maximum power dissipation at TC = 25°C?

    The maximum power dissipation at TC = 25°C is 50 W.

  9. What package type is used for the FDMC8010DC?

    The FDMC8010DC uses a DUAL COOL Top Side Cooling PQFN Package.

  10. What are the dimensions of the PQFN package?

    The PQFN package dimensions are 3.3x3.3 mm.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:37A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.28mOhm @ 37A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:94 nC @ 15 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7080 pF @ 15 V
FET Feature:Standard
Power Dissipation (Max):3W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (3.3x3.3)
Package / Case:8-PowerWDFN
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In Stock

$1.39
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