FDMA86151L
  • Share:

onsemi FDMA86151L

Manufacturer No:
FDMA86151L
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 3.3A 6MICROFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMA86151L is a low/medium voltage N-Channel MOSFET produced by onsemi. This device is designed to provide maximum efficiency and thermal performance, particularly in synchronous buck converters. It features a low on-resistance (rDS(on)) and gate charge, making it suitable for high-performance power management applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)100 V
Continuous Drain Current (Id)3.3 A (at Ta)
Maximum Drain Current (Idm)20 A
On-Resistance (rDS(on))0.06 ohm
Power Dissipation (Pd)2.4 W (at Ta)
Package TypeWDFN (6-MicroFET, 2x2 mm)
PackagingTape & Reel (TR)

Key Features

  • Low on-resistance (rDS(on)) of 0.06 ohm for reduced power losses.
  • Low gate charge for efficient switching.
  • Compact WDFN package (2x2 mm) for space-saving designs.
  • High thermal performance.
  • Part of the PowerTrench® series, known for its advanced trench technology.

Applications

The FDMA86151L is primarily used in synchronous buck converters and other high-efficiency power management applications. It is suitable for use in DC-DC converters, power supplies, and other systems requiring low on-resistance and high thermal performance.

Q & A

  1. What is the voltage rating of the FDMA86151L MOSFET?
    The voltage rating of the FDMA86151L MOSFET is 100 V.
  2. What is the continuous drain current of the FDMA86151L?
    The continuous drain current of the FDMA86151L is 3.3 A at ambient temperature (Ta).
  3. What is the maximum drain current of the FDMA86151L?
    The maximum drain current (Idm) of the FDMA86151L is 20 A.
  4. What is the on-resistance (rDS(on)) of the FDMA86151L?
    The on-resistance (rDS(on)) of the FDMA86151L is 0.06 ohm.
  5. What package type does the FDMA86151L come in?
    The FDMA86151L comes in a WDFN (6-MicroFET, 2x2 mm) package.
  6. What is the power dissipation of the FDMA86151L?
    The power dissipation (Pd) of the FDMA86151L is 2.4 W at ambient temperature (Ta).
  7. What series does the FDMA86151L belong to?
    The FDMA86151L belongs to the PowerTrench® series.
  8. What are the typical applications of the FDMA86151L?
    The FDMA86151L is typically used in synchronous buck converters, DC-DC converters, and other high-efficiency power management applications.
  9. What is the packaging method for the FDMA86151L?
    The FDMA86151L is packaged in Tape & Reel (TR).
  10. Why is the FDMA86151L preferred for high-performance applications?
    The FDMA86151L is preferred for its low on-resistance, low gate charge, and high thermal performance, making it efficient for high-performance power management.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:3.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:88mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:450 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):2.4W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-MicroFET (2x2)
Package / Case:6-WDFN Exposed Pad
0 Remaining View Similar

In Stock

$1.25
730

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDMA86151L FDMA86551L
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 60 V
Current - Continuous Drain (Id) @ 25°C 3.3A (Ta) 7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 88mOhm @ 3.3A, 10V 23mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.3 nC @ 10 V 17 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 50 V 1235 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 2.4W (Ta) 2.4W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 6-MicroFET (2x2) 6-MicroFET (2x2)
Package / Case 6-WDFN Exposed Pad 6-WDFN Exposed Pad

Related Product By Categories

BSS84KW-TP
BSS84KW-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT323
STP80NF70
STP80NF70
STMicroelectronics
MOSFET N-CH 68V 98A TO220AB
FDMC2523P
FDMC2523P
onsemi
MOSFET P-CH 150V 3A 8MLP
CSD19536KTTT
CSD19536KTTT
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
FCH040N65S3-F155
FCH040N65S3-F155
onsemi
MOSFET N-CH 650V 65A TO247-3
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
BSS138K-7
BSS138K-7
Diodes Incorporated
MOSFET N-CH 50V SOT23 T&R 3K
2N7002BKM,315
2N7002BKM,315
Nexperia USA Inc.
MOSFET N-CH 60V 450MA DFN1006-3
BSS84-7
BSS84-7
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
STP80PF55
STP80PF55
STMicroelectronics
MOSFET P-CH 55V 80A TO220AB
STD85N3LH5
STD85N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK
NTMFS4834NT1G
NTMFS4834NT1G
onsemi
MOSFET N-CH 30V 13A/130A 5DFN

Related Product By Brand

NRVBS240LT3G
NRVBS240LT3G
onsemi
DIODE SCHOTTKY 40V 2A SMB
1SMB5934BT3G
1SMB5934BT3G
onsemi
DIODE ZENER 24V 3W SMB
SZ1SMA5924BT3G
SZ1SMA5924BT3G
onsemi
DIODE ZENER 9.1V 1.5W SMA
1N5366BRL
1N5366BRL
onsemi
DIODE ZENER 39V 5W AXIAL
2N7002KW
2N7002KW
onsemi
MOSFET N-CH 60V 310MA SC70
BSS138LT7G
BSS138LT7G
onsemi
MOSFET N-CH 50V 200MA SOT23-3
J113-D74Z
J113-D74Z
onsemi
JFET N-CH 35V 625MW TO92
NSV45035JZT1G
NSV45035JZT1G
onsemi
IC REG CCR 45V 35MA SOT223
MC33153DR2
MC33153DR2
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
NCS29001DR2G
NCS29001DR2G
onsemi
IC LED DRIVER CTRLR PWM 14SOIC
LB1936V-TLM-E
LB1936V-TLM-E
onsemi
IC MTR DRV BIPLR 2.5-9.5V 16SSOP
NCV86601BDT50RKG
NCV86601BDT50RKG
onsemi
IC REG LINEAR 5V 150MA DPAK-5