FDMA86151L
  • Share:

onsemi FDMA86151L

Manufacturer No:
FDMA86151L
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 3.3A 6MICROFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMA86151L is a low/medium voltage N-Channel MOSFET produced by onsemi. This device is designed to provide maximum efficiency and thermal performance, particularly in synchronous buck converters. It features a low on-resistance (rDS(on)) and gate charge, making it suitable for high-performance power management applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)100 V
Continuous Drain Current (Id)3.3 A (at Ta)
Maximum Drain Current (Idm)20 A
On-Resistance (rDS(on))0.06 ohm
Power Dissipation (Pd)2.4 W (at Ta)
Package TypeWDFN (6-MicroFET, 2x2 mm)
PackagingTape & Reel (TR)

Key Features

  • Low on-resistance (rDS(on)) of 0.06 ohm for reduced power losses.
  • Low gate charge for efficient switching.
  • Compact WDFN package (2x2 mm) for space-saving designs.
  • High thermal performance.
  • Part of the PowerTrench® series, known for its advanced trench technology.

Applications

The FDMA86151L is primarily used in synchronous buck converters and other high-efficiency power management applications. It is suitable for use in DC-DC converters, power supplies, and other systems requiring low on-resistance and high thermal performance.

Q & A

  1. What is the voltage rating of the FDMA86151L MOSFET?
    The voltage rating of the FDMA86151L MOSFET is 100 V.
  2. What is the continuous drain current of the FDMA86151L?
    The continuous drain current of the FDMA86151L is 3.3 A at ambient temperature (Ta).
  3. What is the maximum drain current of the FDMA86151L?
    The maximum drain current (Idm) of the FDMA86151L is 20 A.
  4. What is the on-resistance (rDS(on)) of the FDMA86151L?
    The on-resistance (rDS(on)) of the FDMA86151L is 0.06 ohm.
  5. What package type does the FDMA86151L come in?
    The FDMA86151L comes in a WDFN (6-MicroFET, 2x2 mm) package.
  6. What is the power dissipation of the FDMA86151L?
    The power dissipation (Pd) of the FDMA86151L is 2.4 W at ambient temperature (Ta).
  7. What series does the FDMA86151L belong to?
    The FDMA86151L belongs to the PowerTrench® series.
  8. What are the typical applications of the FDMA86151L?
    The FDMA86151L is typically used in synchronous buck converters, DC-DC converters, and other high-efficiency power management applications.
  9. What is the packaging method for the FDMA86151L?
    The FDMA86151L is packaged in Tape & Reel (TR).
  10. Why is the FDMA86151L preferred for high-performance applications?
    The FDMA86151L is preferred for its low on-resistance, low gate charge, and high thermal performance, making it efficient for high-performance power management.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:3.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:88mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:450 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):2.4W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-MicroFET (2x2)
Package / Case:6-WDFN Exposed Pad
0 Remaining View Similar

In Stock

$1.25
730

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDMA86151L FDMA86551L
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 60 V
Current - Continuous Drain (Id) @ 25°C 3.3A (Ta) 7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 88mOhm @ 3.3A, 10V 23mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.3 nC @ 10 V 17 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 50 V 1235 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 2.4W (Ta) 2.4W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 6-MicroFET (2x2) 6-MicroFET (2x2)
Package / Case 6-WDFN Exposed Pad 6-WDFN Exposed Pad

Related Product By Categories

BSN20BKR
BSN20BKR
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
BSC093N15NS5ATMA1
BSC093N15NS5ATMA1
Infineon Technologies
MOSFET N-CH 150V 87A TDSON
FDMS86520L
FDMS86520L
onsemi
MOSFET N CH 60V 13.5A 8PQFN
STP36NF06L
STP36NF06L
STMicroelectronics
MOSFET N-CH 60V 30A TO220AB
FDT1600N10ALZ
FDT1600N10ALZ
onsemi
MOSFET N-CH 100V 5.6A SOT223-4
STF13N65M2
STF13N65M2
STMicroelectronics
MOSFET N-CH 650V 10A TO220FP
STF3NK100Z
STF3NK100Z
STMicroelectronics
MOSFET N-CH 1000V 2.5A TO220FP
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4
STD60N55F3
STD60N55F3
STMicroelectronics
MOSFET N-CH 55V 80A DPAK
STD85N3LH5
STD85N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK
BSS138-F169
BSS138-F169
onsemi
MOSFET N-CH SOT23

Related Product By Brand

ESD9D5.0ST5G
ESD9D5.0ST5G
onsemi
TVS DIODE 5VWM 13.5VC SOD923
NZL7V5AXV3T1G
NZL7V5AXV3T1G
onsemi
TVS DIODE 5VWM 8.8VC SC89-3
SURA8210T3G
SURA8210T3G
onsemi
DIODE GEN PURP 100V 2A SMA
NTK3043NT1G
NTK3043NT1G
onsemi
MOSFET N-CH 20V 210MA SOT723
NVD5117PLT4G-VF01
NVD5117PLT4G-VF01
onsemi
MOSFET P-CH 60V 11A/61A DPAK
EMI4183MTTAG
EMI4183MTTAG
onsemi
CMC 100MA 6LN SMD ESD
NB3N551MNR4G
NB3N551MNR4G
onsemi
IC CLK BUFFER 1:4 180MHZ 8DFN
STK672-410C-E
STK672-410C-E
onsemi
IC MOTOR DRIVER UNIPOLAR 19SIP
MC79L12ACPG
MC79L12ACPG
onsemi
IC REG LINEAR -12V 100MA TO92-3
MC33375ST-3.0T3
MC33375ST-3.0T3
onsemi
IC REG LINEAR 3V 300MA SOT223
CS8190ENF16G
CS8190ENF16G
onsemi
IC DRIVER 16DIP
FODM8801BR2
FODM8801BR2
onsemi
OPTOISO 3.75KV TRANS 4-MINI-FLAT