FDD86380-F085
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onsemi FDD86380-F085

Manufacturer No:
FDD86380-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 50A DPAK
Delivery:
Payment:
iso14001
iso45001
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iso13485

Product Introduction

Overview

The FDD86380-F085 is a high-performance N-Channel PowerTrench® MOSFET produced by onsemi. This device is designed to provide excellent electrical characteristics, making it suitable for a variety of power management applications. The PowerTrench technology enhances the device's efficiency and reliability, offering low on-resistance and high current handling capabilities.

Key Specifications

ParameterValue
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage80 V
Id - Continuous Drain Current50 A
Rds On - Drain-Source Resistance2.5 mΩ (typical at Vgs = 10 V)
Vgs - Gate-Source Voltage±20 V
Pd - Maximum Power Dissipation250 W (at Tc = 25°C)

Key Features

  • Low on-resistance (Rds On) of 2.5 mΩ (typical at Vgs = 10 V)
  • High continuous drain current (Id) of 50 A
  • High drain-source breakdown voltage (Vds) of 80 V
  • Enhanced thermal performance due to PowerTrench technology
  • Robust gate oxide and superior avalanche characteristics

Applications

The FDD86380-F085 is versatile and can be used in various power management and switching applications, including but not limited to:

  • DC-DC converters
  • Power supplies
  • Motor control and drive systems
  • Automotive systems
  • Industrial power management

Q & A

  1. What is the drain-source breakdown voltage of the FDD86380-F085?
    The drain-source breakdown voltage (Vds) is 80 V.
  2. What is the continuous drain current rating of the FDD86380-F085?
    The continuous drain current (Id) is 50 A.
  3. What is the typical on-resistance of the FDD86380-F085?
    The typical on-resistance (Rds On) is 2.5 mΩ at Vgs = 10 V.
  4. What technology is used in the FDD86380-F085?
    The FDD86380-F085 uses PowerTrench technology.
  5. What is the maximum power dissipation of the FDD86380-F085?
    The maximum power dissipation (Pd) is 250 W at Tc = 25°C.
  6. What are some common applications for the FDD86380-F085?
    Common applications include DC-DC converters, power supplies, motor control and drive systems, automotive systems, and industrial power management.
  7. What is the gate-source voltage rating of the FDD86380-F085?
    The gate-source voltage (Vgs) rating is ±20 V.
  8. Where can I find detailed specifications for the FDD86380-F085?
    Detailed specifications can be found in the datasheet available on the onsemi website, Digi-Key, Mouser Electronics, and other authorized distributors.
  9. Is the FDD86380-F085 suitable for high-current applications?
    Yes, the FDD86380-F085 is designed to handle high continuous drain currents, making it suitable for high-current applications.
  10. What are the benefits of using PowerTrench technology in the FDD86380-F085?
    PowerTrench technology enhances the device's efficiency, reliability, and thermal performance.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:13.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1440 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):75W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number FDD86380-F085 FDD86381-F085 FDD86580-F085
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V 60 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 25A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 13.5mOhm @ 50A, 10V 21mOhm @ 25A, 10V 19mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V 21 nC @ 10 V 30 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1440 pF @ 40 V 866 pF @ 40 V 1430 pF @ 30 V
FET Feature - - -
Power Dissipation (Max) 75W (Tj) 48.4W (Tj) 75W (Tj)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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