Overview
The FDD86580-F085 is a high-performance N-Channel PowerTrench MOSFET produced by onsemi. This device is designed for demanding applications requiring high current handling and low on-resistance. It features a 3-pin (2+Tab) DPAK package, making it suitable for a variety of power management and motor driver applications.
Key Specifications
Parameter | Symbol | Value | Unit |
---|---|---|---|
Drain-Source Voltage | VDS | 60 | V |
Drain Current (Continuous) | ID | 50 | A |
On-Resistance (Typical) | RDS(ON) | 1.5 mΩ | mΩ |
Gate-Source Threshold Voltage | VGS(th) | 2-4 | V |
Maximum Junction Temperature | TJ | 175 | °C |
Package Type | 3-Pin (2+Tab) DPAK |
Key Features
- Low on-resistance (RDS(ON)) of 1.5 mΩ, enhancing efficiency in power applications.
- High current handling capability with a continuous drain current (ID) of 50 A.
- Robust package design with a 3-pin (2+Tab) DPAK configuration, suitable for high-power applications.
- Temperature-independent switching characteristics, ensuring reliable performance across a wide temperature range.
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other high-reliability applications.
- Pb-free, halogen-free/BFR-free, and RoHS compliant, aligning with environmental standards.
Applications
- Automotive systems, including motor drivers and power management modules.
- Industrial power supplies and DC-DC converters.
- Electric vehicle (EV) and hybrid electric vehicle (HEV) systems.
- High-power motor control and drive systems.
- Renewable energy systems, such as solar and wind power inverters.
Q & A
- What is the maximum drain-source voltage of the FDD86580-F085?
The maximum drain-source voltage (VDS) is 60 V. - What is the continuous drain current (ID) of this MOSFET?
The continuous drain current (ID) is 50 A. - What is the typical on-resistance (RDS(ON)) of the FDD86580-F085?
The typical on-resistance (RDS(ON)) is 1.5 mΩ. - What package type is used for the FDD86580-F085?
The package type is a 3-pin (2+Tab) DPAK. - Is the FDD86580-F085 AEC-Q101 qualified?
Yes, the FDD86580-F085 is AEC-Q101 qualified and PPAP capable. - What are the environmental compliance standards for this MOSFET?
The FDD86580-F085 is Pb-free, halogen-free/BFR-free, and RoHS compliant. - What are some common applications for the FDD86580-F085?
Common applications include automotive systems, industrial power supplies, EV and HEV systems, high-power motor control, and renewable energy systems. - What is the maximum junction temperature for this device?
The maximum junction temperature (TJ) is 175°C. - Is the FDD86580-F085 suitable for high-reliability applications?
Yes, it is suitable for high-reliability applications due to its robust design and compliance with automotive standards. - Where can I find detailed specifications and datasheets for the FDD86580-F085?
Detailed specifications and datasheets can be found on the onsemi website or through authorized distributors like Mouser Electronics.