FDD86580-F085
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onsemi FDD86580-F085

Manufacturer No:
FDD86580-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 50A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDD86580-F085 is a high-performance N-Channel PowerTrench MOSFET produced by onsemi. This device is designed for demanding applications requiring high current handling and low on-resistance. It features a 3-pin (2+Tab) DPAK package, making it suitable for a variety of power management and motor driver applications.

Key Specifications

ParameterSymbolValueUnit
Drain-Source VoltageVDS60V
Drain Current (Continuous)ID50A
On-Resistance (Typical)RDS(ON)1.5 mΩ
Gate-Source Threshold VoltageVGS(th)2-4V
Maximum Junction TemperatureTJ175°C
Package Type3-Pin (2+Tab) DPAK

Key Features

  • Low on-resistance (RDS(ON)) of 1.5 mΩ, enhancing efficiency in power applications.
  • High current handling capability with a continuous drain current (ID) of 50 A.
  • Robust package design with a 3-pin (2+Tab) DPAK configuration, suitable for high-power applications.
  • Temperature-independent switching characteristics, ensuring reliable performance across a wide temperature range.
  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other high-reliability applications.
  • Pb-free, halogen-free/BFR-free, and RoHS compliant, aligning with environmental standards.

Applications

  • Automotive systems, including motor drivers and power management modules.
  • Industrial power supplies and DC-DC converters.
  • Electric vehicle (EV) and hybrid electric vehicle (HEV) systems.
  • High-power motor control and drive systems.
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the maximum drain-source voltage of the FDD86580-F085?
    The maximum drain-source voltage (VDS) is 60 V.
  2. What is the continuous drain current (ID) of this MOSFET?
    The continuous drain current (ID) is 50 A.
  3. What is the typical on-resistance (RDS(ON)) of the FDD86580-F085?
    The typical on-resistance (RDS(ON)) is 1.5 mΩ.
  4. What package type is used for the FDD86580-F085?
    The package type is a 3-pin (2+Tab) DPAK.
  5. Is the FDD86580-F085 AEC-Q101 qualified?
    Yes, the FDD86580-F085 is AEC-Q101 qualified and PPAP capable.
  6. What are the environmental compliance standards for this MOSFET?
    The FDD86580-F085 is Pb-free, halogen-free/BFR-free, and RoHS compliant.
  7. What are some common applications for the FDD86580-F085?
    Common applications include automotive systems, industrial power supplies, EV and HEV systems, high-power motor control, and renewable energy systems.
  8. What is the maximum junction temperature for this device?
    The maximum junction temperature (TJ) is 175°C.
  9. Is the FDD86580-F085 suitable for high-reliability applications?
    Yes, it is suitable for high-reliability applications due to its robust design and compliance with automotive standards.
  10. Where can I find detailed specifications and datasheets for the FDD86580-F085?
    Detailed specifications and datasheets can be found on the onsemi website or through authorized distributors like Mouser Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:19mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1430 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):75W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number FDD86580-F085 FDD86581-F085 FDD86380-F085
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 80 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 25A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 19mOhm @ 50A, 10V 15mOhm @ 25A, 10V 13.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4.2V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V 19 nC @ 10 V 30 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1430 pF @ 30 V 880 pF @ 30 V 1440 pF @ 40 V
FET Feature - - -
Power Dissipation (Max) 75W (Tj) 48.4W (Tj) 75W (Tj)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-252AA D-PAK (TO-252) TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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