FDD86381-F085
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onsemi FDD86381-F085

Manufacturer No:
FDD86381-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 25A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDD86381-F085 is an N-Channel PowerTrench MOSFET produced by onsemi, designed for high-performance and compact designs. This automotive-grade MOSFET is packaged in a D-PAK (TO-252) configuration, making it suitable for applications requiring efficient thermal management and high current handling. The device is qualified to AEC-Q101 standards, ensuring reliability and durability in demanding automotive environments.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 80 V
ID (Drain Current) 25 A
RDS(ON) (On-Resistance) 21
PD (Power Dissipation) 48.4 W (Tj)
TJ (Junction Temperature) -55°C to 175°C °C
Package D-PAK (TO-252)

Key Features

  • High current handling capability of up to 25 A.
  • Low on-resistance of 21 mΩ, enhancing efficiency and reducing power losses.
  • AEC-Q101 qualified, ensuring reliability and performance in automotive applications.
  • Wide operating temperature range from -55°C to 175°C, suitable for diverse environmental conditions.
  • Compact D-PAK (TO-252) package for efficient thermal management and space-saving designs.

Applications

  • Automotive systems, including powertrain, body, and chassis applications.
  • Power management and switching circuits in vehicles.
  • High-power DC-DC converters and motor control systems.
  • Other high-current, high-efficiency applications requiring robust thermal performance).

Q & A

  1. What is the maximum drain-source voltage of the FDD86381-F085 MOSFET?

    The maximum drain-source voltage is 80 V).

  2. What is the maximum drain current of the FDD86381-F085 MOSFET?

    The maximum drain current is 25 A).

  3. What is the on-resistance of the FDD86381-F085 MOSFET?

    The on-resistance is 21 mΩ).

  4. What is the operating temperature range of the FDD86381-F085 MOSFET?

    The operating temperature range is from -55°C to 175°C).

  5. What package type is the FDD86381-F085 MOSFET available in?

    The FDD86381-F085 MOSFET is available in a D-PAK (TO-252) package).

  6. Is the FDD86381-F085 MOSFET AEC-Q101 qualified?

    Yes, the FDD86381-F085 MOSFET is AEC-Q101 qualified).

  7. What are some typical applications of the FDD86381-F085 MOSFET?

    Typical applications include automotive systems, power management, and high-power DC-DC converters).

  8. What is the maximum power dissipation of the FDD86381-F085 MOSFET?

    The maximum power dissipation is 48.4 W (Tj)).

  9. Why is the D-PAK package beneficial for the FDD86381-F085 MOSFET?

    The D-PAK package is beneficial for its compact size and efficient thermal management).

  10. Where can I find detailed specifications for the FDD86381-F085 MOSFET?

    Detailed specifications can be found in the datasheet available on onsemi's official website and other authorized distributors like Digi-Key).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:21mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:866 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):48.4W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number FDD86381-F085 FDD86581-F085 FDD86081-F085 FDD86380-F085
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 60 V 100 V 80 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc) 25A (Tc) 6.7A (Ta), 21.4A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 21mOhm @ 25A, 10V 15mOhm @ 25A, 10V 31.5mOhm @ 6A, 10V 13.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4.5V @ 36µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V 19 nC @ 10 V 6.8 nC @ 10 V 30 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 866 pF @ 40 V 880 pF @ 30 V 493 pF @ 50 V 1440 pF @ 40 V
FET Feature - - - -
Power Dissipation (Max) 48.4W (Tj) 48.4W (Tj) 3W (Ta), 31.3W (Tc) 75W (Tj)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-252AA D-PAK (TO-252) D-PAK (TO-252) TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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