Overview
The FDD86367-F085 is an N-Channel PowerTrench® MOSFET produced by onsemi. This device is designed for high-power applications, offering a drain-to-source voltage (VDSS) of 80V and a continuous drain current (ID) of 100A. It features a low on-resistance (RDS(on)) of 4.2 mΩ at VGS = 10V and ID = 80A, making it suitable for various automotive and industrial power management systems. The MOSFET is packaged in a D-PAK (TO-252) surface mount configuration, ensuring ease of integration into modern circuit designs.
Key Specifications
| Parameter | Rating | Units |
|---|---|---|
| Drain-to-Source Voltage (VDSS) | 80 | V |
| Gate-to-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at VGS = 10V | 100 | A |
| Pulsed Drain Current | See Figure 4 | A |
| Single Pulse Avalanche Energy (EAS) | 82 | mJ |
| Power Dissipation (PD) | 227 | W |
| Operating and Storage Temperature (TJ, TSTG) | -55 to +175 | °C |
| Thermal Resistance, Junction to Case (RθJC) | 0.66 | °C/W |
| Maximum Thermal Resistance, Junction to Ambient (RθJA) | 52 | °C/W |
| On-Resistance (RDS(on)) at VGS = 10V, ID = 80A | 4.2 | mΩ |
| Total Gate Charge (Qg(TOT)) at VGS = 10V, ID = 80A | 68 | nC |
Key Features
- Low On-Resistance: Typical RDS(on) = 3.3 mΩ at VGS = 10V, ID = 80A.
- High Current Capability: Continuous drain current of 100A and high pulsed current capability.
- UIS Capability: Unclamped Inductive Switching capability, enhancing reliability in high-power applications.
- RoHS Compliant: Environmentally friendly, meeting RoHS standards.
- AEC-Q101 Qualified: Suitable for automotive applications, meeting the AEC-Q101 standard.
- Surface Mount Package: D-PAK (TO-252) package for easy integration into surface mount designs.
Applications
- Automotive Engine Control: Ideal for engine management systems and other high-power automotive applications.
- PowerTrain Management: Used in powertrain management systems for efficient power handling.
- Solenoid and Motor Drivers: Suitable for driving solenoids and motors in various automotive and industrial contexts.
- Integrated Starter/Alternator: Can be used in integrated starter/alternator systems for improved efficiency.
- Primary Switch for 12V Systems: Effective as a primary switch in 12V automotive systems.
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the FDD86367-F085 MOSFET?
The maximum drain-to-source voltage (VDSS) is 80V.
- What is the continuous drain current (ID) rating of this MOSFET?
The continuous drain current (ID) rating is 100A at VGS = 10V.
- What is the typical on-resistance (RDS(on)) of the FDD86367-F085?
The typical on-resistance (RDS(on)) is 3.3 mΩ at VGS = 10V and ID = 80A.
- Is the FDD86367-F085 RoHS compliant?
Yes, the FDD86367-F085 is RoHS compliant.
- What is the operating temperature range of the FDD86367-F085?
The operating temperature range is -55°C to +175°C.
- What package type is used for the FDD86367-F085?
The FDD86367-F085 is packaged in a D-PAK (TO-252) surface mount configuration.
- What are some typical applications of the FDD86367-F085?
Typical applications include automotive engine control, powertrain management, solenoid and motor drivers, integrated starter/alternator, and primary switch for 12V systems.
- Is the FDD86367-F085 qualified to AEC-Q101 standards?
Yes, the FDD86367-F085 is qualified to AEC-Q101 standards, making it suitable for automotive applications.
- What is the maximum thermal resistance, junction to ambient (RθJA), of the FDD86367-F085?
The maximum thermal resistance, junction to ambient (RθJA), is 52°C/W).
- What is the total gate charge (Qg(TOT)) of the FDD86367-F085?
The total gate charge (Qg(TOT)) is 68 nC at VGS = 10V and ID = 80A).
