FDD86369
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onsemi FDD86369

Manufacturer No:
FDD86369
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 90A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDD86369 from onsemi is an N-Channel PowerTrench® MOSFET designed to enhance the efficiency of DC/DC converters. It is optimized for low gate charge, low Rds(on), and fast switching speed, making it ideal for various power management applications. This MOSFET is part of onsemi's low to medium voltage MOSFET family and is RoHS compliant.

Key Specifications

Parameter Value
Current (Tc) 90 A
Drain to Source Voltage (Vdss) 80 V
Drive Voltage (Max Rds On, Min Rds On) 10 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 2530 pF @ 40 V
Mounting Type Surface Mount
Operating Temperature -55°C ~ 175°C (TJ)
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max) 150 W (Tj)
Rds On (Max) @ Id, Vgs 7.9 mΩ @ 80 A, 10 V
Supplier Device Package D-PAK (TO-252)
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20 V
Vgs(th) (Max) @ Id 4 V @ 250 µA

Key Features

  • Low gate charge and low Rds(on) for high efficiency in DC/DC converters.
  • Fast switching speed, enhancing the performance of switching PWM controllers.
  • UIS (Unclamped Inductive Switching) capability, ensuring robust operation under inductive loads.
  • RoHS compliant, meeting environmental standards.
  • Surface mount packaging for easy integration into modern designs.

Applications

  • PowerTrain Management: Ideal for applications involving powertrain systems in vehicles.
  • Solenoid and Motor Drivers: Suitable for driving solenoids and motors due to its high current handling capability.
  • Integrated Starter/Alternator: Used in integrated starter/alternator systems for improved efficiency.
  • Primary Switch for 12V Systems: Can be used as the primary switch in 12V automotive and industrial systems.

Q & A

  1. What is the maximum continuous drain current of the FDD86369 MOSFET?

    The maximum continuous drain current is 90 A.

  2. What is the drain to source breakdown voltage (Vdss) of the FDD86369?

    The drain to source breakdown voltage (Vdss) is 80 V.

  3. What is the typical Rds(on) of the FDD86369 at Vgs = 10 V and Id = 80 A?

    The typical Rds(on) is 7.9 mΩ at Vgs = 10 V and Id = 80 A.

  4. What is the gate charge (Qg) of the FDD86369 at Vgs = 10 V?

    The gate charge (Qg) is 54 nC at Vgs = 10 V.

  5. What are the operating temperature ranges for the FDD86369?

    The operating temperature range is -55°C to 175°C (TJ).

  6. Is the FDD86369 RoHS compliant?

    Yes, the FDD86369 is RoHS compliant.

  7. What are the typical applications of the FDD86369 MOSFET?

    Typical applications include PowerTrain Management, Solenoid and Motor Drivers, Integrated Starter/Alternator, and Primary Switch for 12V Systems.

  8. What is the maximum power dissipation of the FDD86369?

    The maximum power dissipation is 150 W (Tj).

  9. What is the gate source threshold voltage (Vgs(th)) of the FDD86369?

    The gate source threshold voltage (Vgs(th)) is 4 V at Id = 250 µA.

  10. What are the available packages for the FDD86369?

    The available packages include TO-252-3, DPak (2 Leads + Tab), and SC-63.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7.9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:54 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2530 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):150W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-PAK (TO-252)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number FDD86369 FDD86367
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 7.9mOhm @ 80A, 10V 4.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V 88 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2530 pF @ 40 V 4840 pF @ 40 V
FET Feature - -
Power Dissipation (Max) 150W (Tj) 227W (Tj)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D-PAK (TO-252) D-PAK (TO-252)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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