FDD6N50TM-F085
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onsemi FDD6N50TM-F085

Manufacturer No:
FDD6N50TM-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 500V 6A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDD6N50TM-F085 is a high-performance N-Channel MOSFET produced by onsemi. This device is designed for high-power applications, offering a balance of low on-resistance, high switching speed, and robust thermal performance. The FDD6N50TM-F085 is packaged in the TO-252 (DPAK) package, making it suitable for a wide range of power management and control systems.

Key Specifications

ParameterValue
Vds (Drain-Source Voltage)500 V
Id (Continuous Drain Current)6 A (Tc)
Pd (Power Dissipation)89 W (Tc)
Tj (Operating Junction Temperature)-55°C to 150°C
Ciss (Input Capacitance)9400 pF @ 25 V
Channel ModeEnhancement
QualificationAEC-Q101

Key Features

  • High voltage rating of 500 V, making it suitable for high-power applications.
  • Low on-resistance for efficient power handling.
  • High switching speed, ideal for fast switching applications.
  • Robust thermal performance with a maximum power dissipation of 89 W.
  • AEC-Q101 qualified, ensuring reliability and performance in automotive and other demanding environments.

Applications

The FDD6N50TM-F085 is versatile and can be used in various high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems, such as battery management and power steering.
  • Industrial control systems and power management.

Q & A

  1. What is the maximum drain-source voltage of the FDD6N50TM-F085?
    The maximum drain-source voltage is 500 V.
  2. What is the continuous drain current rating of the FDD6N50TM-F085?
    The continuous drain current rating is 6 A (Tc).
  3. What is the maximum power dissipation of the FDD6N50TM-F085?
    The maximum power dissipation is 89 W (Tc).
  4. What is the operating junction temperature range of the FDD6N50TM-F085?
    The operating junction temperature range is -55°C to 150°C.
  5. What is the input capacitance of the FDD6N50TM-F085 at 25 V?
    The input capacitance is 9400 pF at 25 V.
  6. Is the FDD6N50TM-F085 AEC-Q101 qualified?
    Yes, the FDD6N50TM-F085 is AEC-Q101 qualified.
  7. What package type is the FDD6N50TM-F085 available in?
    The FDD6N50TM-F085 is available in the TO-252 (DPAK) package.
  8. What are some common applications of the FDD6N50TM-F085?
    Common applications include power supplies, motor control, automotive systems, and industrial control systems.
  9. What is the channel mode of the FDD6N50TM-F085?
    The channel mode is enhancement.
  10. Where can I find detailed specifications for the FDD6N50TM-F085?
    Detailed specifications can be found in the datasheet available on onsemi's official website and other electronic component distributors like Digi-Key and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:900mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16.6 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:9400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):89W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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