Overview
The FDD4243 is a P-Channel MOSFET produced by onsemi, utilizing their proprietary PowerTrench® technology. This device is designed to offer low RDS(on) and optimized BVDSS capability, providing superior performance in various applications. It is packaged in a DPAK3 (TO-252 3LD) case and is Pb-Free, Halide Free, and RoHS compliant.
Key Specifications
| Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VDS (Drain to Source Voltage) | - | - | -40 | V | |
| VGS (Gate to Source Voltage) | - | - | ±20 | V | |
| ID (Drain Current) - Continuous (Package Limited) | TC = 25°C | - | -14 | A | |
| ID (Drain Current) - Continuous (Silicon Limited) | TC = 25°C | - | -24 | A | |
| ID (Drain Current) - Pulsed | - | - | -60 | A | |
| EAS (Single Pulse Avalanche Energy) | - | - | 84 | J | |
| PD (Power Dissipation) - TC = 25°C | - | - | 42 | W | |
| TJ, TSTG (Operating and Storage Junction Temperature Range) | - | -55 to +150 | - | °C | |
| RJC (Thermal Resistance, Junction to Case) | - | - | 3.0 | °C/W | |
| RJA (Thermal Resistance, Junction to Ambient) | - | - | 40 | °C/W | |
| RDS(on) (Drain to Source On Resistance) at VGS = -10V, ID = -6.7A | - | 36 | 44 | mΩ | |
| RDS(on) (Drain to Source On Resistance) at VGS = -4.5V, ID = -5.5A | - | 48 | 64 | mΩ | |
| VGS(th) (Gate to Source Threshold Voltage) | VDS = VGS, ID = -250µA | -1.4 | -1.6 to -3.0 | V | |
| gFS (Forward Transconductance) | VDS = -5V, ID = -6.7A | - | 16 | S | |
| Ciss (Input Capacitance) | VDS = -20V, VGS = 0V, f = 1.0 MHz | - | 1165 to 1550 | pF | |
| Coss (Output Capacitance) | - | - | 165 to 220 | pF | |
| Crss (Reverse Transfer Capacitance) | - | - | 90 to 135 | pF |
Key Features
- High performance trench technology for extremely low RDS(on)
- Max RDS(on) = 44mΩ at VGS = -10V, ID = -6.7A
- Max RDS(on) = 64mΩ at VGS = -4.5V, ID = -5.5A
- Pb-Free, Halide Free, and RoHS compliant
- Qualified to AEC Q101 for automotive applications
Applications
- Inverter applications
- Power supplies
- Automotive systems (qualified to AEC Q101)
Q & A
- What is the maximum drain to source voltage (VDS) for the FDD4243 MOSFET?
The maximum drain to source voltage (VDS) is -40V.
- What is the maximum continuous drain current (ID) for the FDD4243 MOSFET?
The maximum continuous drain current (ID) is -14A at TC = 25°C.
- What is the typical on-resistance (RDS(on)) at VGS = -10V and ID = -6.7A?
The typical on-resistance (RDS(on)) is 36mΩ at VGS = -10V and ID = -6.7A.
- Is the FDD4243 MOSFET RoHS compliant?
Yes, the FDD4243 MOSFET is Pb-Free, Halide Free, and RoHS compliant.
- What are the typical applications for the FDD4243 MOSFET?
The FDD4243 MOSFET is typically used in inverter applications and power supplies.
- What is the thermal resistance from junction to case (RJC) for the FDD4243 MOSFET?
The thermal resistance from junction to case (RJC) is 3.0°C/W.
- What is the gate to source threshold voltage (VGS(th)) for the FDD4243 MOSFET?
The gate to source threshold voltage (VGS(th)) is between -1.4V and -3.0V.
- What is the single pulse avalanche energy (EAS) for the FDD4243 MOSFET?
The single pulse avalanche energy (EAS) is 84J.
- What is the maximum power dissipation (PD) for the FDD4243 MOSFET at TC = 25°C?
The maximum power dissipation (PD) is 42W at TC = 25°C.
- What is the operating and storage junction temperature range for the FDD4243 MOSFET?
The operating and storage junction temperature range is -55°C to +150°C.
