FDD306P
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onsemi FDD306P

Manufacturer No:
FDD306P
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 12V 6.7A TO252
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDD306P is a P-Channel MOSFET produced by onsemi, utilizing the advanced PowerTrench process. This MOSFET is specified for low voltage applications and is particularly optimized for battery power management. It features a drain-source breakdown voltage of 12 V and is designed to provide high performance and efficiency in various electronic systems.

Key Specifications

ParameterValue
Package / CaseDPAK-3 (TO-252-3)
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage12 V
Maximum Continuous Drain Current (Id)6.7 A
TechnologyMOSFET (Metal Oxide)

Key Features

  • Advanced PowerTrench process for enhanced performance
  • Low voltage specification of 1.8 V
  • High continuous drain current of 6.7 A
  • Optimized for battery power management
  • DPAK-3 (TO-252-3) package for compact design

Applications

The FDD306P MOSFET is suitable for a variety of applications, including battery power management, DC-DC converters, and other low voltage power management systems. It is also used in portable electronics, automotive systems, and industrial power supplies where high efficiency and reliability are crucial.

Q & A

  1. What is the drain-source breakdown voltage of the FDD306P MOSFET?
    The drain-source breakdown voltage of the FDD306P MOSFET is 12 V.
  2. What is the maximum continuous drain current of the FDD306P?
    The maximum continuous drain current of the FDD306P is 6.7 A.
  3. What package type does the FDD306P use?
    The FDD306P uses the DPAK-3 (TO-252-3) package.
  4. What technology is used in the FDD306P MOSFET?
    The FDD306P MOSFET uses MOSFET (Metal Oxide) technology.
  5. For what type of applications is the FDD306P optimized?
    The FDD306P is optimized for battery power management and other low voltage power management applications.
  6. What is the transistor polarity of the FDD306P?
    The transistor polarity of the FDD306P is P-Channel.
  7. How many channels does the FDD306P have?
    The FDD306P has 1 channel.
  8. What is the specified low voltage for the FDD306P?
    The specified low voltage for the FDD306P is 1.8 V.
  9. In which industries can the FDD306P be used?
    The FDD306P can be used in industries such as automotive, industrial, and consumer electronics.
  10. Where can I find detailed specifications for the FDD306P?
    Detailed specifications for the FDD306P can be found on the official onsemi website, as well as on distributor websites like Mouser and Digi-Key.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:6.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:28mOhm @ 6.7A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:1290 pF @ 6 V
FET Feature:- 
Power Dissipation (Max):52W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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