FDD306P
  • Share:

onsemi FDD306P

Manufacturer No:
FDD306P
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 12V 6.7A TO252
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDD306P is a P-Channel MOSFET produced by onsemi, utilizing the advanced PowerTrench process. This MOSFET is specified for low voltage applications and is particularly optimized for battery power management. It features a drain-source breakdown voltage of 12 V and is designed to provide high performance and efficiency in various electronic systems.

Key Specifications

ParameterValue
Package / CaseDPAK-3 (TO-252-3)
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage12 V
Maximum Continuous Drain Current (Id)6.7 A
TechnologyMOSFET (Metal Oxide)

Key Features

  • Advanced PowerTrench process for enhanced performance
  • Low voltage specification of 1.8 V
  • High continuous drain current of 6.7 A
  • Optimized for battery power management
  • DPAK-3 (TO-252-3) package for compact design

Applications

The FDD306P MOSFET is suitable for a variety of applications, including battery power management, DC-DC converters, and other low voltage power management systems. It is also used in portable electronics, automotive systems, and industrial power supplies where high efficiency and reliability are crucial.

Q & A

  1. What is the drain-source breakdown voltage of the FDD306P MOSFET?
    The drain-source breakdown voltage of the FDD306P MOSFET is 12 V.
  2. What is the maximum continuous drain current of the FDD306P?
    The maximum continuous drain current of the FDD306P is 6.7 A.
  3. What package type does the FDD306P use?
    The FDD306P uses the DPAK-3 (TO-252-3) package.
  4. What technology is used in the FDD306P MOSFET?
    The FDD306P MOSFET uses MOSFET (Metal Oxide) technology.
  5. For what type of applications is the FDD306P optimized?
    The FDD306P is optimized for battery power management and other low voltage power management applications.
  6. What is the transistor polarity of the FDD306P?
    The transistor polarity of the FDD306P is P-Channel.
  7. How many channels does the FDD306P have?
    The FDD306P has 1 channel.
  8. What is the specified low voltage for the FDD306P?
    The specified low voltage for the FDD306P is 1.8 V.
  9. In which industries can the FDD306P be used?
    The FDD306P can be used in industries such as automotive, industrial, and consumer electronics.
  10. Where can I find detailed specifications for the FDD306P?
    Detailed specifications for the FDD306P can be found on the official onsemi website, as well as on distributor websites like Mouser and Digi-Key.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:6.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:28mOhm @ 6.7A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:1290 pF @ 6 V
FET Feature:- 
Power Dissipation (Max):52W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$1.01
332

Please send RFQ , we will respond immediately.

Related Product By Categories

AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
STD36P4LLF6
STD36P4LLF6
STMicroelectronics
MOSFET P-CH 40V 36A DPAK
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STL220N6F7
STL220N6F7
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
STP4NK80ZFP
STP4NK80ZFP
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
STB33N60M2
STB33N60M2
STMicroelectronics
MOSFET N-CH 600V 26A D2PAK
BSN20BK215
BSN20BK215
Nexperia USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
NTMFS002P03P8ZT1G
NTMFS002P03P8ZT1G
onsemi
MOSFET, POWER -30V P-CHANNEL, SO
IRFP4668PBF
IRFP4668PBF
Infineon Technologies
MOSFET N-CH 200V 130A TO247AC
NTMFS5C612NLT1G
NTMFS5C612NLT1G
onsemi
MOSFET N-CH 60V 36A/235A 5DFN
NTTFS4939NTAG
NTTFS4939NTAG
onsemi
MOSFET N-CH 30V 8.9A/52A 8WDFN
AO3401AL_DELTA
AO3401AL_DELTA
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V SOT23

Related Product By Brand

MMBTA55LT1G
MMBTA55LT1G
onsemi
TRANS PNP 60V 0.5A SOT23-3
DTC114TM3T5G
DTC114TM3T5G
onsemi
TRANS PREBIAS NPN 50V SOT723
FDMS86200
FDMS86200
onsemi
MOSFET N-CH 150V 9.6A/35A 8PQFN
NVD5117PLT4G-VF01
NVD5117PLT4G-VF01
onsemi
MOSFET P-CH 60V 11A/61A DPAK
NCV2820MUTBG
NCV2820MUTBG
onsemi
IC AMP CLASS D MONO 8UDFN
LM301ADR2G
LM301ADR2G
onsemi
IC OPAMP GP 1 CIRCUIT 8SOIC
STK672-432AN-E
STK672-432AN-E
onsemi
IC MOTOR DRIVER UNIPOLAR 19SIP
NCP432BISNT1G
NCP432BISNT1G
onsemi
IC VREF SHUNT ADJ 0.5% SOT23-3
FAN48610BUC33X
FAN48610BUC33X
onsemi
IC REG BOOST 3.3V 1A 9WLCSP
LM337TG
LM337TG
onsemi
IC REG LIN NEG ADJ 1.5A TO220
MC79L12ACPG
MC79L12ACPG
onsemi
IC REG LINEAR -12V 100MA TO92-3
MC33269DTRK-3.3
MC33269DTRK-3.3
onsemi
IC REG LDO 0.8A 3.3V DPAK