FDC86244
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onsemi FDC86244

Manufacturer No:
FDC86244
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 150V 2.3A SUPERSOT6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDC86244 is an N-Channel MOSFET produced by onsemi, utilizing their advanced PowerTrench® process. This technology is optimized for low RDS(on), enhanced switching performance, and increased ruggedness. The device features a shielded gate, which contributes to its reliability and efficiency in various applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)150 V
ID (Continuous Drain Current)2.3 A
IDM (Pulse Drain Current)10 A
RDS(on) (On-Resistance)Typically optimized for low RDS(on)
PD (Power Dissipation)1.6 W

Key Features

  • Advanced PowerTrench® process for low RDS(on) and enhanced switching performance.
  • Shielded Gate technology for improved reliability and efficiency.
  • Dual-protected with temperature and current limit features.
  • Optimized for ruggedness and durability.

Applications

The FDC86244 N-Channel MOSFET is suitable for a variety of applications, including but not limited to:

  • Power management systems.
  • DC-DC converters.
  • Motor control circuits.
  • Audio amplifiers.
  • General-purpose switching.

Q & A

  1. What is the maximum drain-source voltage of the FDC86244?
    The maximum drain-source voltage (VDS) is 150 V.
  2. What is the continuous drain current rating of the FDC86244?
    The continuous drain current (ID) is 2.3 A.
  3. What is the pulse drain current rating of the FDC86244?
    The pulse drain current (IDM) is 10 A.
  4. What technology is used in the FDC86244?
    The FDC86244 uses onsemi's advanced PowerTrench® process with Shielded Gate technology.
  5. What are the key features of the FDC86244?
    The key features include low RDS(on), enhanced switching performance, shielded gate, and dual protection with temperature and current limits.
  6. What are some common applications for the FDC86244?
    Common applications include power management systems, DC-DC converters, motor control circuits, audio amplifiers, and general-purpose switching.
  7. What is the power dissipation rating of the FDC86244?
    The power dissipation (PD) is 1.6 W.
  8. Is the FDC86244 rugged and durable?
    Yes, the FDC86244 is optimized for ruggedness and durability.
  9. Where can I find detailed specifications for the FDC86244?
    Detailed specifications can be found on the onsemi website, as well as through distributors like Mouser and TME.
  10. What type of MOSFET is the FDC86244?
    The FDC86244 is an N-Channel MOSFET.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:144mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:345 pF @ 75 V
FET Feature:- 
Power Dissipation (Max):1.6W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SuperSOT™-6
Package / Case:SOT-23-6 Thin, TSOT-23-6
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