FDBL9401-F085T6
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onsemi FDBL9401-F085T6

Manufacturer No:
FDBL9401-F085T6
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 58.4/240A 8HPSOF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDBL9401-F085T6 is a single N-channel power MOSFET produced by onsemi. This component is designed to offer high performance and reliability in various power management applications. It features a low on-resistance (RDS(on)) and low gate charge (QG) and capacitance, which help minimize conduction and driver losses. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring it meets stringent automotive standards.

Key Specifications

ParameterValue
Drain-Source Voltage (VDS)40 V (Min)
Drain Current (ID)300 A @ TC = 25°C
On-Resistance (RDS(on))0.67 mΩ @ VGS = 10 V, ID = 50 A
Gate-Source Voltage (VGS)±20 V
Operating Temperature Range-55°C to +175°C
Avalanche Tested100%
Gate Charge (QG)148 nC @ VGS = 10 V
Input Capacitance (Ciss)177 pF @ VDS = 25 V

Key Features

  • Low RDS(on) to minimize conduction losses
  • Low QG and capacitance to minimize driver losses
  • AEC-Q101 qualified and PPAP capable for automotive applications
  • Pb-free and RoHS compliant
  • Small-footprint and compact design
  • Minimum lot-to-lot variations for robust device performance

Applications

The FDBL9401-F085T6 is suitable for a variety of power management applications, including but not limited to:

  • Automotive systems due to its AEC-Q101 qualification and PPAP capability
  • Power supplies and DC-DC converters where low RDS(on) and low QG are beneficial
  • Motor control and drive systems requiring high current handling and low losses

Q & A

  1. What is the maximum drain-source voltage of the FDBL9401-F085T6?
    The maximum drain-source voltage (VDS) is 40 V (Min).
  2. What is the on-resistance (RDS(on)) of this MOSFET?
    The on-resistance (RDS(on)) is 0.67 mΩ @ VGS = 10 V, ID = 50 A.
  3. Is the FDBL9401-F085T6 AEC-Q101 qualified?
    Yes, the FDBL9401-F085T6 is AEC-Q101 qualified and PPAP capable.
  4. What is the operating temperature range of this MOSFET?
    The operating temperature range is -55°C to +175°C.
  5. Is the FDBL9401-F085T6 Pb-free and RoHS compliant?
    Yes, it is Pb-free and RoHS compliant.
  6. What are the key features that minimize losses in this MOSFET?
    The key features include low RDS(on) and low QG and capacitance.
  7. What is the maximum drain current (ID) of this MOSFET?
    The maximum drain current (ID) is 300 A @ TC = 25°C.
  8. Is the FDBL9401-F085T6 suitable for automotive applications?
    Yes, it is suitable for automotive applications due to its AEC-Q101 qualification and PPAP capability.
  9. What is the gate charge (QG) of this MOSFET?
    The gate charge (QG) is 148 nC @ VGS = 10 V.
  10. What are some common applications for the FDBL9401-F085T6?
    Common applications include automotive systems, power supplies, DC-DC converters, and motor control systems.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:58.4A (Ta), 240A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:0.67mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 290µA
Gate Charge (Qg) (Max) @ Vgs:148 nC @ 10 V
Vgs (Max):+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds:10000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):4.3W (Ta), 180.7W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-HPSOF
Package / Case:8-PowerSFN
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Similar Products

Part Number FDBL9401-F085T6 FDBL9406-F085T6 FDBL9403-F085T6
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 58.4A (Ta), 240A (Tc) 45A (Ta), 240A (Tc) 50A (Ta), 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - - -
Rds On (Max) @ Id, Vgs 0.67mOhm @ 50A, 10V 1.21mOhm @ 50A, 10V 0.95mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 290µA 3.5V @ 190µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 148 nC @ 10 V 75 nC @ 10 V 108 nC @ 10 V
Vgs (Max) +20V, -16V +20V, -16V +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 10000 pF @ 25 V 4960 pF @ 25 V 6985 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 4.3W (Ta), 180.7W (Tc) 4.3W (Ta), 136.4W (Tc) 4.3W (Ta), 159.6W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-HPSOF 8-HPSOF 8-HPSOF
Package / Case 8-PowerSFN 8-PowerSFN 8-PowerSFN

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