FDB075N15A
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onsemi FDB075N15A

Manufacturer No:
FDB075N15A
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 150V 130A D2PAK
Delivery:
Payment:
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Product Introduction

Overview

The FDB075N15A is a high-performance N-Channel Power Trench® MOSFET produced by onsemi. This device is designed using onsemi's advanced POWERTRENCH process, which minimizes on-state resistance while maintaining superior switching performance. The FDB075N15A is available in the D2PAK (TO-263) package and is RoHS compliant, making it suitable for a wide range of applications that require high power and current handling capabilities.

Key Specifications

Parameter Value Unit
Drain to Source Voltage (VDSS) 150 V
Gate to Source Voltage (VGSS) ±20 V
Continuous Drain Current (ID) 110 A
Pulsed Drain Current (IDM) 522 A
Power Dissipation (PD) 333 W
Operating and Storage Temperature Range (TJ, TSTG) -55 to +175 °C
Thermal Resistance, Junction to Case (RθJC) 0.45 °C/W
Thermal Resistance, Junction to Ambient (RθJA) 43 °C/W
On-State Resistance (RDS(on)) 7.5 mΩ @ VGS = 10 V, ID = 100 A
Total Gate Charge (Qg) 80 nC @ VGS = 10 V, ID = 80 A nC

Key Features

  • High Performance Trench Technology for Extremely Low RDS(on)
  • Fast Switching and Low Gate Charge
  • High Power and Current Handling Capability
  • RoHS Compliant and Qualified to AEC Q101
  • UIS Capability for robust operation

Applications

  • Synchronous Rectification for ATX / Server / Telecom PSU
  • Battery Protection Circuit
  • Motor Drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • Automotive Engine Control and Powertrain Management
  • Solenoid and Motor Drivers
  • Integrated Starter/Alternator and Primary Switch for 12V Systems

Q & A

  1. What is the maximum drain to source voltage (VDSS) of the FDB075N15A?

    The maximum drain to source voltage (VDSS) is 150 V.

  2. What is the continuous drain current (ID) rating of the FDB075N15A?

    The continuous drain current (ID) rating is 110 A at TC = 25°C.

  3. What is the on-state resistance (RDS(on)) of the FDB075N15A?

    The on-state resistance (RDS(on)) is typically 7.5 mΩ at VGS = 10 V and ID = 100 A.

  4. What is the total gate charge (Qg) of the FDB075N15A?

    The total gate charge (Qg) is typically 80 nC at VGS = 10 V and ID = 80 A.

  5. What are the thermal resistance values for the FDB075N15A?

    The thermal resistance from junction to case (RθJC) is 0.45 °C/W, and from junction to ambient (RθJA) is 43 °C/W.

  6. Is the FDB075N15A RoHS compliant?
  7. What are some common applications of the FDB075N15A?
  8. What is the maximum junction temperature (TJ) for the FDB075N15A?

    The maximum junction temperature (TJ) is 175 °C.

  9. What package types are available for the FDB075N15A?

    The FDB075N15A is available in the D2PAK (TO-263) package.

  10. Is the FDB075N15A qualified to any automotive standards?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:130A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:100 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7350 pF @ 75 V
FET Feature:- 
Power Dissipation (Max):333W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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