Overview
The FDB075N15A is a high-performance N-Channel Power Trench® MOSFET produced by onsemi. This device is designed using onsemi's advanced POWERTRENCH process, which minimizes on-state resistance while maintaining superior switching performance. The FDB075N15A is available in the D2PAK (TO-263) package and is RoHS compliant, making it suitable for a wide range of applications that require high power and current handling capabilities.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (VDSS) | 150 | V |
| Gate to Source Voltage (VGSS) | ±20 | V |
| Continuous Drain Current (ID) | 110 | A |
| Pulsed Drain Current (IDM) | 522 | A |
| Power Dissipation (PD) | 333 | W |
| Operating and Storage Temperature Range (TJ, TSTG) | -55 to +175 | °C |
| Thermal Resistance, Junction to Case (RθJC) | 0.45 | °C/W |
| Thermal Resistance, Junction to Ambient (RθJA) | 43 | °C/W |
| On-State Resistance (RDS(on)) | 7.5 mΩ @ VGS = 10 V, ID = 100 A | mΩ |
| Total Gate Charge (Qg) | 80 nC @ VGS = 10 V, ID = 80 A | nC |
Key Features
- High Performance Trench Technology for Extremely Low RDS(on)
- Fast Switching and Low Gate Charge
- High Power and Current Handling Capability
- RoHS Compliant and Qualified to AEC Q101
- UIS Capability for robust operation
Applications
- Synchronous Rectification for ATX / Server / Telecom PSU
- Battery Protection Circuit
- Motor Drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- Automotive Engine Control and Powertrain Management
- Solenoid and Motor Drivers
- Integrated Starter/Alternator and Primary Switch for 12V Systems
Q & A
- What is the maximum drain to source voltage (VDSS) of the FDB075N15A?
The maximum drain to source voltage (VDSS) is 150 V.
- What is the continuous drain current (ID) rating of the FDB075N15A?
The continuous drain current (ID) rating is 110 A at TC = 25°C.
- What is the on-state resistance (RDS(on)) of the FDB075N15A?
The on-state resistance (RDS(on)) is typically 7.5 mΩ at VGS = 10 V and ID = 100 A.
- What is the total gate charge (Qg) of the FDB075N15A?
The total gate charge (Qg) is typically 80 nC at VGS = 10 V and ID = 80 A.
- What are the thermal resistance values for the FDB075N15A?
The thermal resistance from junction to case (RθJC) is 0.45 °C/W, and from junction to ambient (RθJA) is 43 °C/W.
- Is the FDB075N15A RoHS compliant?
- What are some common applications of the FDB075N15A?
- What is the maximum junction temperature (TJ) for the FDB075N15A?
The maximum junction temperature (TJ) is 175 °C.
- What package types are available for the FDB075N15A?
The FDB075N15A is available in the D2PAK (TO-263) package.
- Is the FDB075N15A qualified to any automotive standards?
