FDB035N10A
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onsemi FDB035N10A

Manufacturer No:
FDB035N10A
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 120A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDB035N10A is an N-Channel MOSFET produced by onsemi, utilizing the advanced PowerTrench® process. This technology is designed to minimize on-state resistance while maintaining high efficiency and thermal performance. The device is packaged in a 3-pin D2PAK surface mount configuration, making it suitable for a variety of high-power applications.

Key Specifications

Parameter Value
Channel Type N-Channel
Maximum Continuous Drain Current 120 A
Drain-Source Voltage (Vds) 100 V
Package Type 3-Pin D2PAK
Maximum Power Dissipation (Tc) 333 W
On-State Resistance (Rds(on)) Minimized using PowerTrench® process

Key Features

  • Advanced PowerTrench® process for low on-state resistance and high efficiency
  • Thermally efficient D2PAK package
  • Next-generation enhanced body diode technology for soft recovery
  • High current handling capability of up to 120 A
  • High voltage rating of 100 V

Applications

The FDB035N10A is suitable for various high-power applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Industrial power systems
  • Automotive systems requiring high current and voltage handling

Q & A

  1. What is the channel type of the FDB035N10A MOSFET?

    The FDB035N10A is an N-Channel MOSFET.

  2. What is the maximum continuous drain current of the FDB035N10A?

    The maximum continuous drain current is 120 A.

  3. What is the drain-source voltage rating of the FDB035N10A?

    The drain-source voltage rating is 100 V.

  4. What package type is used for the FDB035N10A?

    The FDB035N10A is packaged in a 3-pin D2PAK configuration.

  5. What is the maximum power dissipation of the FDB035N10A?

    The maximum power dissipation is 333 W at Tc.

  6. What technology is used to minimize on-state resistance in the FDB035N10A?

    The FDB035N10A uses the advanced PowerTrench® process.

  7. What are some key features of the FDB035N10A?

    Key features include low on-state resistance, thermally efficient packaging, and enhanced body diode technology for soft recovery.

  8. What are some typical applications for the FDB035N10A?

    Typical applications include power supplies, motor control systems, industrial power systems, and automotive systems.

  9. Is the FDB035N10A still in production?

    No, the FDB035N10A is obsolete and not in production.

  10. Where can I find detailed specifications for the FDB035N10A?

    Detailed specifications can be found on the official onsemi website, as well as on distributor sites like Digi-Key, Mouser, and RS Components.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:116 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7295 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):333W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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