FDB035N10A
  • Share:

onsemi FDB035N10A

Manufacturer No:
FDB035N10A
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 120A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDB035N10A is an N-Channel MOSFET produced by onsemi, utilizing the advanced PowerTrench® process. This technology is designed to minimize on-state resistance while maintaining high efficiency and thermal performance. The device is packaged in a 3-pin D2PAK surface mount configuration, making it suitable for a variety of high-power applications.

Key Specifications

Parameter Value
Channel Type N-Channel
Maximum Continuous Drain Current 120 A
Drain-Source Voltage (Vds) 100 V
Package Type 3-Pin D2PAK
Maximum Power Dissipation (Tc) 333 W
On-State Resistance (Rds(on)) Minimized using PowerTrench® process

Key Features

  • Advanced PowerTrench® process for low on-state resistance and high efficiency
  • Thermally efficient D2PAK package
  • Next-generation enhanced body diode technology for soft recovery
  • High current handling capability of up to 120 A
  • High voltage rating of 100 V

Applications

The FDB035N10A is suitable for various high-power applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Industrial power systems
  • Automotive systems requiring high current and voltage handling

Q & A

  1. What is the channel type of the FDB035N10A MOSFET?

    The FDB035N10A is an N-Channel MOSFET.

  2. What is the maximum continuous drain current of the FDB035N10A?

    The maximum continuous drain current is 120 A.

  3. What is the drain-source voltage rating of the FDB035N10A?

    The drain-source voltage rating is 100 V.

  4. What package type is used for the FDB035N10A?

    The FDB035N10A is packaged in a 3-pin D2PAK configuration.

  5. What is the maximum power dissipation of the FDB035N10A?

    The maximum power dissipation is 333 W at Tc.

  6. What technology is used to minimize on-state resistance in the FDB035N10A?

    The FDB035N10A uses the advanced PowerTrench® process.

  7. What are some key features of the FDB035N10A?

    Key features include low on-state resistance, thermally efficient packaging, and enhanced body diode technology for soft recovery.

  8. What are some typical applications for the FDB035N10A?

    Typical applications include power supplies, motor control systems, industrial power systems, and automotive systems.

  9. Is the FDB035N10A still in production?

    No, the FDB035N10A is obsolete and not in production.

  10. Where can I find detailed specifications for the FDB035N10A?

    Detailed specifications can be found on the official onsemi website, as well as on distributor sites like Digi-Key, Mouser, and RS Components.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:116 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7295 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):333W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$7.14
112

Please send RFQ , we will respond immediately.

Related Product By Categories

FDMC2523P
FDMC2523P
onsemi
MOSFET P-CH 150V 3A 8MLP
2N7002 TR PBFREE
2N7002 TR PBFREE
Central Semiconductor Corp
MOSFET N-CH 60V 115MA SOT23
FDMA430NZ
FDMA430NZ
onsemi
MOSFET N-CH 30V 5A 6MICROFET
STL38N65M5
STL38N65M5
STMicroelectronics
MOSFET N-CH 650V PWRFLAT HV
STD3N62K3
STD3N62K3
STMicroelectronics
MOSFET N-CH 620V 2.7A DPAK
STD4NK60ZT4
STD4NK60ZT4
STMicroelectronics
MOSFET N-CH 600V 4A DPAK
BUK7Y2R0-40HX
BUK7Y2R0-40HX
Nexperia USA Inc.
MOSFET N-CH 40V 120A LFPAK56
STP4NK80ZFP
STP4NK80ZFP
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
NTMFS002P03P8ZT1G
NTMFS002P03P8ZT1G
onsemi
MOSFET, POWER -30V P-CHANNEL, SO
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
STS12NH3LL
STS12NH3LL
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
MTB30P06VT4G
MTB30P06VT4G
onsemi
MOSFET P-CH 60V 30A D2PAK

Related Product By Brand

SZESD7461N2T5G
SZESD7461N2T5G
onsemi
TVS DIODE 16VWM 39VC 2XDFN
BAS16M3T5G
BAS16M3T5G
onsemi
DIODE GEN PURP 100V 200MA SOT723
MMBTA55LT1G
MMBTA55LT1G
onsemi
TRANS PNP 60V 0.5A SOT23-3
BC547BTAR
BC547BTAR
onsemi
TRANS NPN 45V 0.1A TO92-3
NTUD3127CT5G
NTUD3127CT5G
onsemi
MOSFET N/P-CH 20V SOT-963
FCMT125N65S3
FCMT125N65S3
onsemi
MOSFET N-CH 650V 24A 4PQFN
CAT24C02YI-GT3JN
CAT24C02YI-GT3JN
onsemi
IC EEPROM 2KBIT I2C 8TSSOP
NCP1252ADR2G
NCP1252ADR2G
onsemi
IC OFFLINE SWITCH MULT TOP 8SOIC
MC33153DR2
MC33153DR2
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
NCP1566MNTXG
NCP1566MNTXG
onsemi
IC PWM CTLR ACT CLAMP 24QFN
NCP177AMX330TCG
NCP177AMX330TCG
onsemi
IC REG LINEAR 3.3V 500MA 4XDFN
NCV551SN50T1G
NCV551SN50T1G
onsemi
IC REG LINEAR 5V 150MA 5TSOP