FCPF400N80ZL1
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onsemi FCPF400N80ZL1

Manufacturer No:
FCPF400N80ZL1
Manufacturer:
onsemi
Package:
Bulk
Description:
MOSFET N-CH 800V 11A TO220F
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FCPF400N80ZL1-F154 is a high-voltage N-Channel MOSFET from onsemi, part of their SUPERFET II family. This device utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge performance. It is designed to minimize conduction loss and provide superior switching performance, making it highly suitable for various high-power applications.

Key Specifications

Parameter Unit Min Typ Max
Drain to Source Voltage (VDSS) V - - 800
Gate to Source Voltage (VGSS) V - - ±20 (DC), ±30 (AC, f > 1 Hz)
Continuous Drain Current (ID) A - - 14 (TC = 25°C), 8.9 (TC = 100°C)
Pulsed Drain Current (IDM) A - - 33
Static Drain to Source On Resistance (RDS(on)) - 340 400
Gate Threshold Voltage (VGS(th)) V 2.5 - 4.5
Total Gate Charge (Qg) nC - 43 56
Power Dissipation (PD) W - - 35.7 (TC = 25°C)
Operating and Storage Temperature Range (TJ, TSTG) °C -55 - 150

Key Features

  • Ultra Low On-Resistance: Typical RDS(on) = 340 mΩ at VGS = 10 V, ID = 5.5 A.
  • Low Gate Charge: Typical Qg = 43 nC.
  • Low Effective Output Capacitance: Typical Coss(eff.) = 138 pF.
  • 100% Avalanche Tested: Ensures robustness against avalanche conditions.
  • ESD Improved Capability: Internal gate-source ESD diode can withstand over 2 kV HBM surge stress.
  • RoHS Compliant: Environmentally friendly.

Applications

  • AC-DC Power Supply: Suitable for high-efficiency power conversion.
  • LED Lighting: Ideal for driving high-power LEDs.
  • Laptop Adapters: Used in high-power adapter applications.
  • Audio and Industrial Power: Applicable in various industrial and audio power systems.
  • ATX Power Supplies: Used in computer power supplies for efficient operation.

Q & A

  1. What is the maximum drain to source voltage (VDSS) of the FCPF400N80ZL1-F154 MOSFET?

    The maximum drain to source voltage (VDSS) is 800 V.

  2. What is the typical on-resistance (RDS(on)) of this MOSFET?

    The typical on-resistance (RDS(on)) is 340 mΩ at VGS = 10 V, ID = 5.5 A.

  3. What is the maximum continuous drain current (ID) at 25°C?

    The maximum continuous drain current (ID) at 25°C is 14 A.

  4. What is the total gate charge (Qg) of this MOSFET?

    The total gate charge (Qg) is typically 43 nC.

  5. Is the FCPF400N80ZL1-F154 MOSFET RoHS compliant?

    Yes, the FCPF400N80ZL1-F154 MOSFET is RoHS compliant.

  6. What are the typical applications of the FCPF400N80ZL1-F154 MOSFET?

    Typical applications include AC-DC power supplies, LED lighting, laptop adapters, audio and industrial power systems, and ATX power supplies.

  7. What is the maximum operating temperature of the FCPF400N80ZL1-F154 MOSFET?

    The maximum operating temperature is 150°C.

  8. Does the FCPF400N80ZL1-F154 MOSFET have built-in ESD protection?

    Yes, it has an internal gate-source ESD diode that can withstand over 2 kV HBM surge stress.

  9. What is the thermal resistance from junction to case (RθJC) of this MOSFET?

    The thermal resistance from junction to case (RθJC) is 3.5 °C/W.

  10. What is the maximum power dissipation (PD) at 25°C?

    The maximum power dissipation (PD) at 25°C is 35.7 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:400mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs:56 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2350 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):35.7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F-3
Package / Case:TO-220-3 Full Pack
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